1. Resonant tunnelling quantum dots and wires: some recent problems and progress
- Author
-
Hartmut Buhmann, P. C. Main, J. W. Sakai, Nobuya Mori, T.J. Foster, L. Mansouri, Jiannong Wang, N LaScala, Andre K. Geim, Peter H. Beton, and Laurence Eaves
- Subjects
Physics ,Condensed matter physics ,Electron ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Magnetic field ,Tunnel effect ,Quantum dot ,Materials Chemistry ,Electrical and Electronic Engineering ,Quantum tunnelling composite ,Quantum ,Quantum well ,Quantum tunnelling - Abstract
Electron tunnelling through donor-related states is discussed. This tunnelling process, which occurs well below the threshold voltage for conventional resonant tunnelling into the two-dimensional continuum states of the quantum well, reveals a new type of Fermi edge singularity effect which arises from the Coulomb interaction between the tunnelling electron on the localized site and the Fermi sea of electrons in the emitter layer. A new means of forming laterally confined resonant tunnelling devices is also described. By studying the effect of an applied magnetic field, the additional structure that appears in the current-voltage characteristics of these devices can be unambiguously associated with a lateral quantum mechanical confinement effect.
- Published
- 1994
- Full Text
- View/download PDF