1. Graphene bridge rectifier based on self-switching diode arrays
- Author
-
Jiawei Zhang, Aimin Song, and Joseph Brownless
- Subjects
Electron mobility ,Materials science ,Bioengineering ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,Noise (electronics) ,terahertz ,Responsivity ,Rectifier ,Rectification ,General Materials Science ,Self-switching diode ,Electrical and Electronic Engineering ,Diode ,business.industry ,Mechanical Engineering ,graphene ,General Chemistry ,Semiconductor device ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Mechanics of Materials ,Optoelectronics ,0210 nano-technology ,business ,Voltage - Abstract
Here, we present theory and measurements for a bridge rectifier formed from arrays of graphene self-switching diodes (GSSDs). Despite graphene's lack of a bandgap and high carrier concentration causing a reduced rectification ratio, the extremely high carrier mobility will allow GSSDs to work at frequencies well into the THz region. Compared with a single SSD array, the bridge rectifier structure allows for full-wave rectification of an AC signal. Here we derive an equation for the voltage output of a bridge rectifier formed from GSSDs, which predicts a quadratic relationship between output voltage and input current. This relationship is confirmed using AC and DC measurements. The fabricated rectifier is found to have a high room temperature intrinsic responsivity of [Formula: see text] at low frequency and a low noise equivalent power of [Formula: see text].
- Published
- 2019
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