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We report a robust perpendicularly magnetized β-W/CoFeB/MgO multilayer structure. For the first time, we demonstrate efficient spin–orbit torque (SOT) switching and a highly thermally stable annealing process with this structure using X-ray diffraction tests, the harmonic technique, and SOT-driven magnetization switching measurements. These results may enable applications of SOT-based magnetic random access memory, which is required for integration in the CMOS back-end-of-line process.

The effects of N substitution on the magnetic properties of Mn3InC1−xNx (0.0 ≤ x ≤ 0.7) are investigated systematically. Partial substitution of N for C leads to the monotonic reduction in both the Curie temperature TC and saturated magnetization MS. The final results obtained from thermo-magnetic curves demonstrate that Mn3InC1−xNx samples show a magnetic phase transition from a paramagnetic (PM) state to a ferrimagnetic (FIM) state consisting of ferromagnetic (FM) and antiferromagnetic (AFM) components. In addition, there is a competition between the AFM component and the FM component in the FIM state with the change of the N-doped content. Magnetic measurements of Mn3InC at 100 Oe and 5000 Oe indicate the metastability and the coexistence of different magnetic phases at lower temperature. The spans of FIM phase broaden gradually with further N doping. The mechanism for the induction of the complicated magnetic state is still in controversy. However, the results clearly show that the doping at the X site in antiperovskite Mn3AX materials is as useful as that of the A and Mn sites.