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Graphene nanoribbon is an attractive material for nano-electronic devices, as their electrical transport performance can be controlled by their edge structures. However, in most cases, the electrical transport has been investigated only for graphene nanoribbons fabricated on a substrate, which hinders the appearance of intrinsic electrical transport due to screening effects. In this study, we developed special devices based on silicon chips for transmission electron microscopy to observe a monolayer graphene nanoribbon suspended between two gold electrodes. Moreover, with the development of an in-situ transmission electron microscopy holder, the current–voltage characteristics were achieved simultaneously with observing and modifying the structure. We found that the current–voltage characteristics differed between 1.5 nm-wide graphene nanoribbons with armchair and zigzag edge structures. The energy gap of the zigzag edge was more than two-fold larger than that of the armchair edge and exhibited an abrupt jump above a critical bias voltage in the differential conductance curve. Thus, our in-situ transmission electron microscopy method is promising for elucidating the structural dependence of electrical conduction in two-dimensional materials. [ABSTRACT FROM AUTHOR]