22 results on '"Meneghesso, Gaudenzio"'
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2. Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
3. Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer
4. Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics
5. Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
6. CdTe solar cells: technology, operation and reliability
7. Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications
8. GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
9. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors
10. Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements
11. Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
12. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
13. Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence
14. Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs
15. Evidence of optically induced degradation in gallium nitride optoelectronic devices
16. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors.
17. The 2018 GaN power electronics roadmap
18. High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors
19. Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
20. Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements
21. Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells
22. Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions
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