131 results on '"Mishra, Umesh K."'
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2. High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications
3. Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices
4. First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel
5. Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD
6. Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN
7. Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors
8. First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE
9. First demonstration of improvement in hole conductivity inc-plane III-Nitrides through application of uniaxial strain
10. Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays.
11. Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD
12. Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition
13. Establishment of design space for high current gain in III-N hot electron transistors
14. Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates
15. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition
16. P–n junction diodes with polarization induced p-type graded InxGa1–xN layer
17. Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
18. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
19. Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels
20. Polarization induced three-dimensional hole gas in compositionally graded InxGa1− xN layer
21. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
22. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices
23. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays
24. Relaxedc-plane InGaN layers for the growth of strain-reduced InGaN quantum wells
25. Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor
26. Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures
27. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates
28. Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy
29. Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers
30. Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides
31. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
32. Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors
33. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency
34. Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
35. Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements
36. N-polar GaN epitaxy and high electron mobility transistors
37. High-performance N-polar GaN enhancement-mode device technology
38. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
39. Molecular beam epitaxy for high-performance Ga-face GaN electron devices
40. Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
41. Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy
42. Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy
43. Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers
44. AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
45. Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al$_{2}$O$_{3}$ Deposited by Atomic Layer Deposition
46. Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
47. Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
48. Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
49. Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions
50. Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
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