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Your search keyword '"Quiñonez, Walter"' showing total 4 results
Start Over Author "Quiñonez, Walter" Publisher iop publishing
4 results on '"Quiñonez, Walter"'

2. Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration

Author

Universidad Nacional de Cuyo, Agencia Nacional de Promoción Científica y Tecnológica (Argentina), European Commission, Leal Martir, Rodrigo, Sánchez, M. J., Aguirre, Myriam H., Quiñonez, Walter, Ferreyra, C., Acha, C., Lecourt, J., Lüders, Ulrike, Rubi, Diego, Universidad Nacional de Cuyo, Agencia Nacional de Promoción Científica y Tecnológica (Argentina), European Commission, Leal Martir, Rodrigo, Sánchez, M. J., Aguirre, Myriam H., Quiñonez, Walter, Ferreyra, C., Acha, C., Lecourt, J., Lüders, Ulrike, and Rubi, Diego

Abstract

Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiOx/TaOy/Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress. From a combination of experiments and theoretical simulations we determine that both TiOx and TaOy layers oxidize, via environmental oxygen uptake, during the electroforming process. Once the memristive effect is stabilized (post-forming behavior) our results suggest that oxygen exchange with the environment is suppressed and the OV dynamics that drives the memristive behavior is restricted to an internal electromigration between TiOx and TaOy layers. Our work provides relevant information for the design of reliable binary oxide memristive devices.

Published
2023

4. Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration.

Author

Leal Martir, Rodrigo, José Sánchez, María, Aguirre, Myriam, Quiñonez, Walter, Ferreyra, Cristian, Acha, Carlos, Lecourt, Jerome, Lüders, Ulrike, and Rubi, Diego

Subjects
ELECTRODIFFUSION, MEMRISTORS, OXYGEN, INFORMATION design, TRANSITION metal oxides, OXYGEN reduction
Abstract

Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiO x /TaO y /Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress. From a combination of experiments and theoretical simulations we determine that both TiO x and TaO y layers oxidize, via environmental oxygen uptake, during the electroforming process. Once the memristive effect is stabilized (post-forming behavior) our results suggest that oxygen exchange with the environment is suppressed and the OV dynamics that drives the memristive behavior is restricted to an internal electromigration between TiO x and TaO y layers. Our work provides relevant information for the design of reliable binary oxide memristive devices. [ABSTRACT FROM AUTHOR]

Published
2023
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