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We have synthesized high-quality single crystals of SnxPb1-xTe and carried out detailed studies of the magnetotransport properties of one of the samples, Sn0.05Pb0.95Te. Longitudinal magnetoresistance increases almost linearly with increasing applied field (H) and reaches ∼310% atH= 13 T. At higher fields, both longitudinal and Hall resistance show clear Shubnikov de Haas oscillations. The oscillations are smooth and periodic, and there exists only one frequency,fα∼ 57 T. However, an additional frequency,fβ∼ 69 T, appears as the angle between the field direction and the normal to the sample surface (θ) is increased. Bothfαandfβexhibitθ-dependence;fαdecreases whereasfβincreases gradually with increasingθ. The presence of two frequencies in Sn0.05Pb0.95Te indicates that there exist two Fermi surface pockets (αandβpockets). We have constructed the Landau-level fan plot and determined the Berry phase (δ) for theαpocket to beδ∼ 0.1. Thisδvalue is very close to the expected value of 0 for a topologically trivial system.

The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron–electron (e–e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope R H = δR xy /δB = δρ xy /δB can be used to probe e–e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron–phonon scattering. Nevertheless, one needs to be certain that the change of R H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.

We report high-precision magnetization ([Formula: see text]), magnetic susceptibility ([Formula: see text]), specific heat (C p (T, H)) and 'zero-field' electrical resistivity, [Formula: see text], data taken on Gd2Te3 single crystal over wide ranges of temperature and magnetic field (H), with either [Formula: see text]-axis or [Formula: see text]-plane. [Formula: see text] and [Formula: see text] unambiguously establish that the b-axis is the easy direction of magnetization whereas any direction in the ac-plane is a hard direction. The [Formula: see text]-type anomaly in 'zero-field' specific heat, C p (T, H = 0), and an abrupt drop in [Formula: see text] (characteristic of the paramagnetic (PM) - antiferromagnetic (AFM) phase transition) are observed at the Neel temperature, [Formula: see text] K. [Formula: see text] and C p (T,H) clearly demonstrate that [Formula: see text] shifts to lower temperatures with increasing H irrespective of whether H points in the easy or hard direction. When [Formula: see text], the [Formula: see text] isotherms at temperatures in the range 2.5 K [Formula: see text] [Formula: see text] K reveal the existence of a field-induced spin-flop (SF) transition at fields 4.0 T [Formula: see text] [Formula: see text] [Formula: see text] 4.5 T. The first principles electronic band structure and density of states calculations, based on the density functional theory, correctly predict an AFM ground state (stabilized primarily by the 4f Gd3+ - 5p Te2-- 4f Gd3+ superexchange interactions) and the observed semi-metallic behavior for the Gd2Te3 compound. Moreover, these calculations yield the values [Formula: see text] [Formula: see text] for the ordered magnetic moment per Gd atom at T = 0, [Formula: see text] mJ mol-1 K-2 for the Sommerfeld coefficient for the electronic specific heat contribution and [Formula: see text] K for the Curie-Weiss temperature, respectively. These theoretical estimates conform well with the corresponding experimental values [Formula: see text] [Formula: see text], [Formula: see text] mJ mol-1 K-2 and [Formula: see text] K.

The nonlinear optical crystals of tris allylthiourea cadmium chloride have been grown by temperature lowering solution growth technique. Solubility of ATCC has been determined for various temperatures. Meta stable zone width and induction period values have been determined in order to optimize the growth parameters. Nucleation parameters such as Interfacial tension, critical radius and the free energy of formation of critical nucleus have been evaluated. The as grown crystals were characterized by the powder X-ray diffraction, UV-VIS absorption and transmittance, FT-IR absorption, TGA-DTA, Dielectric and micro hardness studies.

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

We have carried out magneto-transport measurements for single crystal SrMnSb2. Clear Shubnikov–de Haas oscillations were resolved at relatively low magnetic field around 4 T, revealing a quasi-2D Fermi surface. We observed a development of quantized plateaus in Hall resistance at high pulsed fields up to 60 T. Due to the strong 2D confinement and layered properties of the samples, we interpreted the observation as bulk quantum Hall effect that is contributed by the parallel 2D conduction channels. Moreover, the spin degeneracy was lifted leading to Landau level splitting. The presence of anisotropic g factor and the formation of the oscillation beating pattern reveal a strong spin–orbit interaction in the SrMnSb2 system.

We report on the high-pressure Raman study of Cd3As2, a three-dimensional Dirac semimetal, up to 19 GPa at room temperature. Our study shows that light scattering by intervalley and intravalley density fluctuations give rise to electronic Raman scattering (ERS), with Lorentzian-like lineshape at low frequency. The strength and linewidth of the ERS are pressure dependent and exhibit a significant drop at P-c1 = 2.5 GPa, signifying a breakdown of the Dirac semimetal to a semiconducting phase. The first phase transition at Pc1 is also clearly identified by the significant changes in the pressure derivatives of phonon frequencies and linewidths. Pressure dependence of phonon parameters also reveal a second phase transition at P-c2 = 9.5 GPa, being reported for the first time. This semiconductor-to-semiconductor transition coincides with the abrupt changes seen in the activation energy (band gap) of the semiconductor phase. Copyright (C) EPLA, 2018.

The anisotropic superconducting properties of PbTaSe2 single crystal is reported. Superconductivity with T c = 3.83 ± 0.02 K has been characterized fully with electrical resistivity ρ(T), magnetic susceptibility χ(T), and specific heat C p (T) measurements using single crystal samples. The superconductivity is type-II with lower critical field H c1 and upper critical field H c2 of 65 and 450 Oe (H⊥ to the ab-plane), 140 and 1500 Oe (H|| to the ab-plane), respectively. These results indicate that the superconductivity of PbTaSe2 is anisotropic. The superconducting anisotropy, electron–phonon coupling λ ep, superconducting energy gap Δ0, and the specific heat jump ΔC/γT c at T c confirms that PbTaSe2 can be categorized as a bulk superconductor.

The electrical and magnetic properties of slightly Cu-deficient BiOCu(0.94)S are investigated using neutron diffraction, ac magnetic susceptibility, magnetization and electrical resistivity measurements. The Cu spins order in a ferromagnetic arrangement below T(C) = 250 K. An antiferromagnetic component develops below 180 K when the crystalline unit cell experiences a sharp thermal contraction upon cooling, resulting in a canted ferromagnetic spin arrangement at low temperatures. In the magnetically ordered state the electrical transport can be described using three-dimensional variable range hopping conduction. An applied magnetic field can effectively reduce the hopping barrier. Spin-charge couplings are clearly revealed when the resistivity departs from the hopping conduction and begins to increase with increasing temperatures above 250 K where the Cu spins become disordered.