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Heteroatom doping is an effective method to improve the capacitive performance of graphene-based materials. In this work, a facile and efficient radio-frequency (RF) plasma treatment strategy has been employed to achieve simultaneous doping and reduction of graphene oxide (GO). As a result, boron-doped and nitrogen-doped reduced graphene oxide (denoted as B-rGO and N-rGO) have been synthesized rapidly under relatively low temperatures compared with conventional thermal methods. The B-rGO and N-rGO present significantly improved specific capacitances as high as 345 F g−1 and 365 F g−1 at 0.2 A g−1, respectively, exhibiting a fourfold increase compared to that of GO before plasma treatment. Interestingly, the N-rGO shows better rate capability than the B-rGO. Furthermore, the mechanism of simultaneous doping and reduction by RF plasma treatment is discussed based on the diagnosis of emission spectroscopy. The high energy electrons and plasma-excited ions and radicals render effective reduction, etching, and doping of GO at the same time. Compared with high-temperature carbonization and wet chemical methods, our plasma treatment method is more energy-saving and eco-friendly. We believe this rapid and straightforward plasma treatment method reported here can be extended to the incorporation of various heteroatoms into graphene lattice for broad applications.

Nanostructured dielectric composite has been considered as a promising manner in improving the flashover performance of oil-paper which has been widely used in power systems. In this paper, plasma-enhanced chemical vapor deposition (PECVD) is used to deposit SiO2 on the ceramic fiber-reinforced insulating paper. Scanning electron microscope images show a large number of SiO2 nanoparticles with diameters of 100 nm–250 nm uniformly attached to the fiber surface after the plasma deposition. The surface flashover voltage of the insulating paper was tested in the air and the transformer oil, respectively. Results show that the corresponding DC surface flashover voltages increased by 15.1% in the air and breakdown between liquid and solid interface increased by 24.6% after the PECVD. It is believed that nanoparticles constructed in ceramic fibers change the electron injection barrier which inhibits the injection of negative charges and hinders the accumulation of charges in the dielectric. Nanoparticles can capture electric charges formed in the transformer oil which affects the generation and development of streamers, resulting in an increased dielectric strength. This study provides a new method to comprehensively improve the surface insulating property which has the prospect of promoting other dielectric materials.

Low-temperature step-graded InAlAs metamorphic buffer layers on GaAs substrate grown by molecular beam epitaxy were investigated. The strain relaxation and the composition of the top InAlAs layer were determined by high-resolution triple-axis x-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed. Surface morphology was observed by reflection high-energy electron diffraction pattern and atomic force microscopy. Under a selected range of growth parameters, the root mean square surface roughness of the sample grown at 380 °C is 0.802 nm, which has the smallest value compared with those of other samples.Furthmore, The ω-2θ and ω scans of the triple-axis x-ray diffraction, and photoluminescence show the sample grown at 380 °C has better crystalline quality. With decreasing As overpressure at this growth temperature, crystalline quality became poor and could not maintain two dimensional growth with increasing overpressure. The carrier concentrations and Hall mobilities of the InAlAs/ InGaAs/GaAs MM-HEMT structure on low-temperature step-graded InAlAs metamorphic buffer layers grown in optimized conditions are high enough to make devices.