1. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer
- Author
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Manijeh Razeghi, Tarik Moudakir, Ferechteh H. Teherani, Suresh Sundaram, Matthew R. Phillips, Kevin Alan Prior, V. E. Sandana, Simon Gautier, D. J. Rogers, Liangchen Zhu, Philippe Bove, Akhil Rajan, Cuong Ton-That, Youssef El-Gmili, Ryan McClintock, Zakaria Djebbour, Abdallah Ougazzaden, Heriot-Watt University [Edinburgh] (HWU), Nanovation SARL (Nanovation), Nanovation SARL, University of Technology Sydney (UTS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), Northwestern University [Evanston], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)
- Subjects
Materials science ,Acoustics and Ultrasonics ,Scanning electron microscope ,Cathodoluminescence ,Gallium nitride ,02 engineering and technology ,Nitride ,Epitaxy ,01 natural sciences ,[SPI.MAT]Engineering Sciences [physics]/Materials ,chemistry.chemical_compound ,0103 physical sciences ,Wafer ,ComputingMilieux_MISCELLANEOUS ,Applied Physics ,[PHYS]Physics [physics] ,010302 applied physics ,business.industry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry ,Sapphire ,Optoelectronics ,0210 nano-technology ,business ,Luminescence - Abstract
© 2016 IOP Publishing Ltd. Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift-off (ELO) process by supporting the wax host with a glass substrate proved key in enabling full wafer scale-up. Scanning electron microscopy and x-ray diffraction confirmed that intact epitaxial GaN had been transferred to the glass host. Depth-resolved cathodoluminescence (CL) analysis of the bottom surface of the lifted-off GaN layer revealed strong near-band-edge (3.33 eV) emission indicating a superior optical quality for the GaN which was lifted off the GaN substrate. This modified ELO approach demonstrates that previous theories proposing that wax host curling was necessary to keep the ELO etch channel open do not apply to the GaN/ZnO system. The unprecedented full wafer transfer of epitaxial GaN to an alternative support by ELO offers the perspective of accelerating industrial adoption of the expensive GaN substrate through cost-reducing recycling.
- Published
- 2016
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