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5 results on '"Soeren Steudel"'

1. Conduction mechanism in amorphous InGaZnO thin film transistors

Author

Gerwin H. Gelinck, Manoj Nag, Ajay Bhoolokam, Jan Genoe, Andrey Kadashchuk, Paul Heremans, Guido Groeseneken, Soeren Steudel, and Molecular Materials and Nanosystems

Subjects
Materials science, Applied physics, Percolation models, Multiple trapping, HOL - Holst, General Physics and Astronomy, 02 engineering and technology, Poisson equation, 01 natural sciences, law.invention, Condensed Matter::Materials Science, Ionic impurity, law, Impurity, 0103 physical sciences, Materials, TFT, 010302 applied physics, TS - Technical Sciences, Industrial Innovation, Condensed matter physics, Scattering, Transistor, General Engineering, Thin film transistors, Semiconducting indium compounds, 021001 nanoscience & nanotechnology, Thermal conduction, Amorphous solid, a-IGZO, Amorphous indiumgallium-zinc oxide, Thin-film transistor, Nano Technology, Amorphous InGaZnO, Poisson's equation, 0210 nano-technology
Abstract

We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of temperature. We also show the intrinsic mobility is dependent on temperature due to scattering by ionic impurities or lattice. In solving the Poisson equation to find the surface potential and back potential as a function of gate voltage, we explicitly allow for the back surface to be floating, as is the case for a-IGZO transistors. The parameters for gap states, percolation barriers and intrinsic mobility at room temperature that we extract with this comprehensive model are in good agreement with those extracted in literature with partially-complete models.

Published
2015

2. Back-channel-etch amorphous indium–gallium–zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

Author

Paul Heremans, Adrian Chasin, Kris Myny, Guido Groeseneken, Ajay Bhoolokam, Joris Maas, Manoj Nag, and Soeren Steudel

Subjects
Materials science, Physics and Astronomy (miscellaneous), Passivation, business.industry, General Engineering, Oxide, Energy-dispersive X-ray spectroscopy, General Physics and Astronomy, chemistry.chemical_element, equipment and supplies, Amorphous solid, chemistry.chemical_compound, chemistry, Thin-film transistor, Molybdenum, Transmission electron microscopy, Optoelectronics, business, Layer (electronics)
Abstract

We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

Published
2014

3. Functional Pentacene Thin Films Grown by In-Line Organic Vapor Phase Deposition at Web Speeds above 2 m/min

Author

Paul Heremans, Jan Genoe, Peter Vicca, Cedric Rolin, and Soeren Steudel

Subjects
Materials science, Applied physics, business.industry, Transistor, General Engineering, General Physics and Astronomy, Nanotechnology, law.invention, Pentacene, chemistry.chemical_compound, chemistry, law, Phase (matter), Deposition (phase transition), Optoelectronics, Thin film, business, FOIL method, Susceptor
Abstract

We show in this paper that the organic vapor phase deposition technique can advantageously be extended to an in-line system, where a susceptor moves at a constant speed underneath an elongated showerhead. Highly uniform pentacene films are grown at web speeds of up to 2.1 m/min, equivalent to an average deposition rate of 105 angstrom/s in a static system. These pentacene films are of high electrical quality as proven by transistor mobilities of up to 1.5 cm(2) V-1 s(-1) and five-stage ring oscillators on foil that achieve a frequency of 24 kHz at a supply voltage of 20 V. (C) 2009 The Japan Society of Applied Physics

Published
2009

4. Conduction mechanism in amorphous InGaZnO thin film transistors.

Author

Ajay Bhoolokam, Manoj Nag, Soeren Steudel, Jan Genoe, Gerwin Gelinck, Andrey Kadashchuk, Guido Groeseneken, and Paul Heremans

Abstract

We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of temperature. We also show the intrinsic mobility is dependent on temperature due to scattering by ionic impurities or lattice. In solving the Poisson equation to find the surface potential and back potential as a function of gate voltage, we explicitly allow for the back surface to be floating, as is the case for a-IGZO transistors. The parameters for gap states, percolation barriers and intrinsic mobility at room temperature that we extract with this comprehensive model are in good agreement with those extracted in literature with partially-complete models. [ABSTRACT FROM AUTHOR]

Published
2016
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5. Back-channel-etch amorphous indium–gallium–zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation.

Author

Manoj Nag, Ajay Bhoolokam, Soeren Steudel, Adrian Chasin, Kris Myny, Joris Maas, Guido Groeseneken, and Paul Heremans

Abstract

We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation. [ABSTRACT FROM AUTHOR]

Published
2014
Full Text
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