1. Large-signal characterizations of DDR IMPATT devices based on group III–V semiconductors at millimeter-wave and terahertz frequencies
- Author
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Suman Ganguli, Aliva Mallik, Aritra Acharyya, Sudeepto Dasgupta, Janmajoy Banerjee, Arindam Das, and Debopriya Banerjee
- Subjects
Materials science ,business.industry ,Terahertz radiation ,Condensed Matter Physics ,Signal ,Radio spectrum ,Electronic, Optical and Magnetic Materials ,Semiconductor ,Extremely high frequency ,Materials Chemistry ,Electronic engineering ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Quantum tunnelling ,Voltage ,Wurtzite crystal structure - Abstract
Large-signal (L-S) characterizations of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on group III–V semiconductors such as wurtzite (Wz) GaN, GaAs and InP have been carried out at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation (NSVE) model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A comparative study of the devices based on conventional semiconductor materials (i.e. GaAs, InP and Si) with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.
- Published
- 2014