1. Integration of Photo-Patternable Low-κ Material into Advanced Cu Back-End-Of-The-Line
- Author
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Hosadurga Shobha, Ranee Kwong, Blake Davis, Robert L. Wisnieff, Stephan A. Cohen, Philip Joe Brock, Terry A. Spooner, Richard D. Kaplan, Eric G. Liniger, Debra Neumayer, Qinghuang Lin, Robert D. Miller, Sampath Purushothaman, Ratnam Sooriyakumaran, Shyng-Tsong Chen, Alshakim Nelson, and J. Patel
- Subjects
Materials science ,Semiconductor ,business.industry ,law ,General Engineering ,General Physics and Astronomy ,Node (circuits) ,Nanotechnology ,Dielectric ,Photolithography ,business ,Line (electrical engineering) ,law.invention - Abstract
We report herein the demonstration of a simple, low-cost Cu back-end-of-the-line (BEOL) dual-damascene integration using a novel photo-patternable low-κ dielectric material concept that dramatically reduces Cu BEOL integration complexity. This κ=2.7 photo-patternable low-κ material is based on the SiCOH-based material platform and has sub-200 nm resolution capability with 248 nm optical lithography. Cu/photo-patternable low-κ dual-damascene integration at 45 nm node BEOL fatwire levels has been demonstrated with very high electrical yields using the current manufacturing infrastructure. The photo-patternable low-κ concept is, therefore, a promising technology for highly efficient semiconductor Cu BEOL manufacturing.
- Published
- 2010
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