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The results of structural and electrochemical studies of thin Mo-S-P films obtained by pulsed laser deposition at various conditions from a target made of mixture of MoS2 and P powders are presented. For variation of S/P ratio and modification structure of the catalytic films, the deposition of the laser plume was conducted in vacuum, in Ar and H2S gas. The highest electrocatalytic properties for activating the hydrogen evolution reaction in an acid solution were found for composite amorphous/nanocrystalline MoS6P/nc-Mo films. In the chemical stateof S 2p, the high binding energy dominated. The doping of the films with phosphorus increased the efficiency of the reaction compared with that of MoS x /nc-Mo films. The analysis of the synergistic effect of phosphorus on the performance of amorphous MoS x P y films in H2 evolution was carried out using the density functional theory.

Thin-film precursors of BC x were formed by pulsed laser codeposition of boron and carbon. Targets made of pressed boron and carbon powders with an equal element content (B/C = 1/1) and an increased carbon content (B/C = 1/3) were used. The films were deposited on sapphire substrates at elevated temperature (700°C) which determined the initial properties of the precursor BC x films. Irradiation of the films was carried out by laser pulses of nanosecond duration with varying intensity. The films obtained by laser annealing of BC x (Q-BC x ) were studied by scanning electron microscopy and micro-Raman spectroscopy. Irradiation under optimal conditions made allowed to realize pulsed melting of the films and partial preservation of their continuity on the substrate. The local structure of Q-BC x films and the nature of the changes in their electrophysical properties depended on the composition of the precursor films and the laser irradiation regimes.

A comparative analysis of the abilities of several novel methods to produce ultrathin molybdenum disulphide (MoS2) films containing from 1 to 10 molecular layers was carried out. To deposit MoSxfilms and MoOxprecursor films, the atomic flux was formed by laser ablation of Mo, MoS2, and MoO3targets. Saturation with sulphur of the deposited layers was performed using a reactive gas (hydrogen sulphide) or by thermally activated treatment of thin-film precursors in a sulphur vapor. It has been established that the use of hydrogen sulphide makes it possible to obtain ultrathin MoS2films at relatively low temperatures ∼ 350 °C. However, these films contained local defects which were absent in the films prepared by the treatment of thin film MoOxprecursors in sulphur vapours at higher temperatures (≥ 650°C).

The work deals with the study of the influence of combined action of thermomechanical and laser treatments of rapidly quenched TiNiCu thin ribbons on the properties of two-way shape memory effect. It was shown that increasing of the energy density of the laser radiation and the external mechanical stress leads to growth of the reversible strain of the received amorphous-crystalline composite in the interval of martensitic transformation.

The effect of pulsed laser radiation (λ = 248 nm, τ = 20 ns) on structural properties and shape memory behavior of the rapidly quenched Ti50Ni25Cu25 alloy ribbon was studied. The radiation energy density was varied from 2 to 20 mJ mm−2. The samples were characterized by means of scanning electron microscopy, x-ray diffraction, microhardness measurements and shape memory bending tests. It was ascertained that the action of the laser radiation leads to the formation of a structural composite material due to amorphization or martensite modification in the surface layer of the ribbon. Two methods are proposed which allow one to generate the pronounced two-way shape memory effect (TWSME) in a local area of the ribbon by using only a single pulse of the laser radiation. With increasing energy density of laser treatment, the magnitude of the reversible angular displacement with realization of the TWSME increases. The developed techniques can be used for the creation of various micromechanical devices.