Search

Your search keyword '"Wang, Yiqun"' showing total 13 results
Start Over Author "Wang, Yiqun" Publisher iop publishing
13 results on '"Wang, Yiqun"'

6. High performance mid-wave infrared photodetector based on graphene/black phosphorus heterojunction

Author

Zhang, Xuemin, primary, Yan, Changling, additional, Hu, Xin, additional, Dong, Qingsong, additional, Liu, Zhiyi, additional, Lv, Weiming, additional, Zeng, Chunhong, additional, Su, Ruigong, additional, Wang, Yiqun, additional, Sun, Tianyu, additional, Xing, Zheng, additional, Pang, Chao, additional, Zhang, Baoshun, additional, Shi, Wenhua, additional, and Long, Minsheng, additional

Published
2021
Full Text
View/download PDF

11. Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition

Author

Xuemin Zhang, Wenhua Shi, Tianyu Sun, Wang Yiqun, Chao Pang, Baoshun Zhang, Zheng Xing, Changling Yan, and Chunhong Zeng

Subjects
Materials science, Polymers and Plastics, Graphene, business.industry, Metals and Alloys, Chemical vapor deposition, Epitaxy, Chemical reaction, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Biomaterials, Surface coating, X-ray photoelectron spectroscopy, law, Optoelectronics, Deposition (phase transition), Graphite, business
Abstract

Epitaxial graphene (EG) on semi-insulating SiC prepared by a thermal decomposition method is the most promising strategy for graphene application in large-scale integrated circuits due to compatibility with current semiconductor processes. In this study, high-quality few-layer graphene (FLG) was epitaxially grown on the semi-insulating on-axis 4H-SiC by microwave plasma chemical vapor deposition (MPCVD). Both sides of the SiC substrate were etched with H2 plasma at ∼1000 °C to promote the nucleation and the growth of graphite before epitaxial growth. The surface morphology and properties of EG on SiC (0001) were measured by energy-dispersive x-ray (EDX), x-ray photoelectron spectrogram (XPS), and atomic force microscope (AFM). The qualities of EG grown on the two surfaces of SiC at various temperatures were checked by Raman spectroscopy. Furthermore, the EG growth was controlled by the effect of Ar plasma in the MPCVD and the few-layer (1–3 layers) high-quality EG films were formed on SiC (000 1 ¯ ). The room temperature Hall mobility of EGs up to 2790 cm2 V−1 s−1 on SiC(000 1 ¯ ) was realized.

Published
2020

12. Design of Power Ripple Detection System for Carrier Module of Electric Energy Meter

Author

Han Peng, Ou Xin, Wang Yiqun, Hao Fengzhu, Yi Pan, and Hang Sun

Subjects
Physics, Electric energy, business.industry, Ripple, Electrical engineering, Metre, business, Power (physics)
Abstract

DC power supply is usually obtained by rectification, filtering, voltage stabilization and other processes of municipal electricity. Due to the incomplete rectification or the existence of switching power supply, the output DC stability is superimposed with AC components, called ripple. The generation of ripple will bring noise, reduce the efficiency of power supply and affect the normal operation of the system. Strong ripple will cause the generation of surge voltage or current, and burn down electrical appliances and other equipment. This paper designs a detection device which can quickly and efficiently detect the ripple of carrier power supply. The experimental results show that the design system can help testers quickly judge whether the ripple of carrier module power supply meets the ripple voltage limit stipulated by Southern Power Grid Corporation, and is used to detect the ripple of power supply. Testing provides a new method of implementation.

Published
2020

Catalog

Books, media, physical & digital resources
See catalog results