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Your search keyword '"Wu, Pei-Yu"' showing total 12 results
Start Over Author "Wu, Pei-Yu" Publisher iop publishing
12 results on '"Wu, Pei-Yu"'

3. Use of a supercritical fluid treatment to improve switching region in resistive random access memory

Author

Lin, Shih-Kai, primary, Chen, Min-Chen, additional, Chang, Ting-Chang, additional, Lien, Chen-Hsin, additional, Wu, Cheng-Hsien, additional, Lin, Yu-Shuo, additional, Wu, Pei-Yu, additional, Tan, Yung-Fang, additional, Huang, Wei-Chen, additional, Zhang, Yong-Ci, additional, Chou, Sheng-Yao, additional, Wu, Chung-Wei, additional, and Sze, Simon M., additional

Published
2022
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4. Clarifying the switching layer transformation through analysis of an abnormal I–V curves with increasing set compliance current in oxide-based resistive random access memory

Author

Lin, Shih-Kai, primary, Chang, Ting-Chang, additional, Lien, Chen-Hsin, additional, Wu, Cheng-Hsien, additional, Xu, You-Lin, additional, Yang, Chih-Cheng, additional, Huang, Wei-Chen, additional, Wu, Pei-Yu, additional, Zhang, Yong-Ci, additional, Chou, Sheng-Yao, additional, Huang, Hui-Chun, additional, Wang, Kao-Yuan, additional, and Sze, Simon M., additional

Published
2021
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7. Investigation on the current conduction mechanism of HfZrOx ferroelectric memory

Author

Chen, Wen-Chung, primary, Zhang, Yong-Ci, additional, Chen, Po-Hsun, additional, Tseng, Yi-Ting, additional, Wu, Cheng-Hsien, additional, Yang, Chih-Cheng, additional, Wu, Pei-Yu, additional, Tan, Yung-Fang, additional, Lin, Shih-Kai, additional, Huang, Wei-Chen, additional, Huang, Hui-Chun, additional, Tsai, Tsung-Ming, additional, and Chang, Ting-Chang, additional

Published
2020
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8. Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

Author

Lin, Shih-Kai, primary, Wu, Cheng-Hsien, additional, Chen, Min-Chen, additional, Chang, Ting-Chang, additional, Lien, Chen-Hsin, additional, Xu, You-Lin, additional, Tseng, Yi-Ting, additional, Wu, Pei-Yu, additional, Tan, Yung-Fang, additional, Sun, Li-Chuan, additional, Zhang, Yong-Ci, additional, Huang, Jen-Wei, additional, and Sze, Simon M, additional

Published
2020
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9. Investigation on the current conduction mechanism of HfZrOx ferroelectric memory.

Author

Chen, Wen-Chung, Zhang, Yong-Ci, Chen, Po-Hsun, Tseng, Yi-Ting, Wu, Cheng-Hsien, Yang, Chih-Cheng, Wu, Pei-Yu, Tan, Yung-Fang, Lin, Shih-Kai, Huang, Wei-Chen, Huang, Hui-Chun, Tsai, Tsung-Ming, and Chang, Ting-Chang

Subjects
RANDOM access memory, CAPACITANCE measurement, ELECTRIC capacity, ELECTRON transport, MECHANICAL properties of condensed matter, MEMORY, ELECTRON tunneling
Abstract

HfZrOx (HZO)-based materials have received much attention due to their special film characteristics in recent years. Ferroelectric random access memory (FeRAM) based on this HZO material also has promising potential as a next generation memory due to its non-volatile characteristics, excellent endurance, and low power consumption. Previous research has mainly focused on the material properties of HZO-based FeRAM. However, an in-depth investigation of the electrical properties of HZO-based FeRAM is necessary to better understand its transporting mechanism. In this contribution, this study aims to investigate the mechanism of an HZO-based metal–ferroelectric-metal capacitor using comprehensive experimental results, including current–voltage, capacitance–voltage, and polarization–voltage measurements. Experiments at various temperatures are also conducted to help verify the transport mechanism. The low current transport by the Fowler–Nordheim tunneling mechanism does not change with temperature, whereas the high current transport via the Schottky mechanism increases with increasing temperature. We found that the orientation of the dipole plays an important role. Finally, we also propose a band model to explain the electron transport in this HZO-based FeRAM. [ABSTRACT FROM AUTHOR]

Published
2020
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10. Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM.

Author

Lin, Shih-Kai, Wu, Cheng-Hsien, Chen, Min-Chen, Chang, Ting-Chang, Lien, Chen-Hsin, Xu, You-Lin, Tseng, Yi-Ting, Wu, Pei-Yu, Tan, Yung-Fang, Sun, Li-Chuan, Zhang, Yong-Ci, Huang, Jen-Wei, and Sze, Simon M

Subjects
ELECTRODES
Abstract

This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (dsw) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods. [ABSTRACT FROM AUTHOR]

Published
2020
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12. Performance improvement after nitridation treatment in HfO2-based resistance random-access memory

Author

Wang, Ming-Hui, primary, Chang, Ting-Chang, additional, Shih, Chih-Cheng, additional, Tseng, Yi-Ting, additional, Tsai, Tsung-Ming, additional, Zheng, Hao-Xuan, additional, Wu, Pei-Yu, additional, Huang, Hui-Chun, additional, Chen, Wen-Chung, additional, Huang, Jen-Wei, additional, Ma, Xiao-Hua, additional, Hao, Yue, additional, and Sze, Simon M., additional

Published
2018
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