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Ferroelectric transitions in filled tungsten bronze ceramics Sr4R2Ti4Nb6O30, Sr5RTi3Nb7O30 (R=La, Nb, Sm & Eu) and Ba4Nd2Ti4Nb6O30 are investigated with differential scanning calorimetry (DSC) and the Curie—Weiss law fitting to the dielectric constant. The magnitude of the Curie-Weiss constant C ∼ 105 suggests displacement-type ferroelectric transition in the present compounds. The large ΔT difference between dielectric maximum temperature Tm and Curie—Weiss temperature T0) values indicate the difficult formation of ferroelectric domains or polar nanoregions in the present compounds and also the characteristics of the first order ferroelectric transition. Three categories are suggested for the ferroelectric transition in the above tungsten bronzes. The ferroelectric transition exhibits large thermal hysteresis. According to the DSC results, gradual recovery of the endothermic peak occurs after aging at temperature below the Curie point, indicating the gradual stability of the ferroelectric phase after cooling from the high-temperature para-electric phase. The relationship between the Curie—Weiss law fitting parameters and the nature of the ferroelectric transition is modified for the filled tungsten bronzes. [ABSTRACT FROM AUTHOR]

We propose an efficient method of generating a vortex beam with multi-foci by using a fractal spiral zone plate (FSZP), which is designed by combining fractal structure with a spiral zone plate (SZP) in the squared radial coordinate. The theoretical analysis reveals that the number of foci that embed vortices is significantly increased as compared with that obtained by using a conventional SZP. Furthermore, the influence of topological charge on the intensity distribution in focal plane is also discussed in detail. For experimental investigation, an FSZP with topological charge p = 1 and 6.4 mm diameter is fabricated by using a photo-etching technique. The calibration indicates that the focusing performances of such a kind of zone plane (ZP) accord well with simulations, thereby providing its potential applications in multi-dimensional optical manipulation and optical imaging technology. [ABSTRACT FROM AUTHOR]

Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga0.75In0.25As0.49Sb0.51 nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation, these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm (0.636 eV). Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region (980 nm) with the external quantum efficiency of 2.0 × 104% and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing. [ABSTRACT FROM AUTHOR]

Atomically thin two-dimensional (2D) layered materials have potential applications in nanoelectronics, nanophotonics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes (LEDs), and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices. [ABSTRACT FROM AUTHOR]

In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W−1 and an external quantum efficiency of 2.8×105% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. [ABSTRACT FROM AUTHOR]