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In this paper, a facile method was introduced to fabricate fine conductive patterns by low-temperature selective laser sintering of Cu nanoparticles. By virtue of a nanosecond-pulsed ultraviolet laser source, fine circuits with a thickness of ∼8 μm and a conductivity of 3–6.5 × 106 S m−1 was successfully fabricated from Cu nanoparticle paste with a high metal content >80 wt.% on a flexible substrate at a wide scan rate range of 5–500 mm s−1. The sintered circuits exhibited a special sandwich morphology, with fully melted features in the centre and thermally sintered neck-connected features on the edges. A twofold linear relationship between the width of thermally sintered region and the reciprocal of the laser scan rate was revealed, indicating a heat dissipation mode transition from metal layer dominated dissipation to substrate dominated dissipation with the decrease of the laser scan rate. Finite element simulations were carried out to study the evolutions of temperature field and heat dissipation with changing laser scan rate and power, and the results fitted well with experimental results. On this basis, a relational expression was further proposed to determine the optimal processing window for laser sintering of metal nanoparticle layers. Our method extends the producible thickness and improves the fabrication efficiency of laser-printed circuits with desirable conductivity. The findings of this study can provide a guidance for understanding and controlling the sintering and heat transfer process of printing methods with similar materials and techniques. [ABSTRACT FROM AUTHOR]

A green method for the synthesis of in situ Cu paste is developed. Cu particles are prepared through chemical reduction by selecting a special copper source, reducing agent, and solvent. Then the reaction solution is directly concentrated to obtain an in situ Cu paste. The synthesis of Cu particles and the preparation of Cu paste are conducted simultaneously, and the process of separation, purification, drying, storage, and re-dispersion of powder are reduced. Particles are not directly exposed to air, thus the oxidation of micro/submicron -Cu is effectively prevented, and the agglomeration of particles caused by drying and dispersion operations is simultaneously reduced. Furthermore, the proposed method has a certain universality, and different types of Cu sources can be used to prepare in situ paste with different sizes and morphologies. The entire preparation process is simple, efficient, green, and the yield can reach 99.99%, which breaks through the bottleneck of the application of traditional micro/submicron-Cu materials. Copper acetate-based in situ paste is sintered for 30 min at 260 °C and 2 MPa in a reducing atmosphere. The shear strength, resistivity, and thermal conductivity reach 55.26 MPa, 4.01 × 10â€"8 Ω·m, and 92.75 W/(m·K), respectively, which could meet the interconnection application of power semiconductor devices. [ABSTRACT FROM AUTHOR]