1. Enhanced bulk photovoltaic effect in ZnO:Bi x (p-type)/MoS2 (n-type) heterostructure by tuning Bi content
- Author
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Yunxia Zhou, Xingpeng Liu, and Jun Zhu
- Subjects
Materials science ,business.industry ,Doping ,Energy conversion efficiency ,Heterojunction ,Anomalous photovoltaic effect ,Photovoltaic effect ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Pulsed laser deposition ,Electrical resistivity and conductivity ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,Thin film ,business - Abstract
To investigate the metal oxide thin film application in optoelectronic field via changing its conduction type, the p-n junction with Bi-doped p-type ZnO and n-type MoS2 is fabricated by pulsed laser deposition. In this work, we explore the photovoltaic effect of the ZnO/MoS2 heterostructure, focusing on the function of tuning Bi contents in enhancing the photoelectric conversion efficiency. Doping-Bi ZnO thin film perfectly shows stable p-type semiconductor properties with high carrier concentration (about from 1×1016 to 1×1017 cm-3), high rational mobility (363 cm2/(υs)) and low resistivity (216.7 Ω). In addition, MoS2 clearly exhibits large quantities of nanosheets and distinct vertically standing structure. The power conversion efficiency (PCE) of ZnO:Bix/MoS2 enhances from 0.518 % to 2.430 % along with increasing doping Bi element from 1 % to 7 %, but when doping Bi content reaches 10 %, the PCE decrease 0.552 %. Essentially, the ability of capturing photon-generated carriers in ZnO:Bix film gradually increases as doping Bi content to without excessive doping content. These findings illustrate that this proposed Bi-doped ZnO has potential in promoting the photoelectric conversion efficiency of MoS2 based p-n junction.
- Published
- 2019