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Your search keyword '"Zhao, Li-Ming"' showing total 18 results
Start Over Author "Zhao, Li-Ming" Publisher iop publishing
18 results on '"Zhao, Li-Ming"'

5. Photonic spin Hall effect with high coupling efficiency in the combined structure of periodic dielectric waveguides and photonic crystal waveguide.

Author

Zhang, Yi-Chen, Zhao, Li-Ming, and Zhou, Yun-Song

Subjects
*SPIN Hall effect, *DIELECTRIC waveguides, *PHOTONIC crystals, *HALL effect, *GEOMETRIC shapes
Abstract

In this paper, we discuss the photonic spin Hall effect (PSHE) in the combined structure of periodic dielectric waveguides (PDWs) and photonic crystal waveguide (PCW). By controlling the polarization of the dipole source, we have successfully achieved the arbitrary manipulation of PSHE for the PDW guided mode in our structure. The advantage of PDW is that it can be designed to different shapes without the geometric constraints, and still maintains a relatively high transmission rate. Therefore, by further changing the structure, including the adjustment of the intersection angle between PDW and PCW, and the alteration of the straight PDW to the bending or bifurcated shapes, we find that the output of highly unidirectional PSHE is mainly determined by the intersection angle between PDW and PCW and almost independent of the detailed shape of PDW. [ABSTRACT FROM AUTHOR]

Published
2023
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14. Characteristics of Spontaneous Emission of Polarized Atoms in Metal–Dielectric Multiple Layer Structures

Author

Gu Ben-Yuan, Zhao Li-Ming, and Zhou Yun-Song

Subjects
Condensed Matter::Quantum Gases, Materials science, General Physics and Astronomy, Dielectric, Plateau (mathematics), Polarization (waves), Surface plasmon polariton, Metal, visual_art, Physics::Atomic and Molecular Clusters, visual_art.visual_art_medium, Spontaneous emission, Physics::Atomic Physics, Atomic physics, Layer (electronics), Excitation
Abstract

The spontaneous emission (SE) progress of polarized atoms in a stratified structure of air–dielectric(D0)–metal(M)–dielectric(D1)–air can be controlled effectively by changing the thickness of the D1 layer and rotating the polarized direction of atoms. It is found that the normalized SE rate of atoms located inside the D0 layer crucially depends on the atomic position and the thickness of the D1 layer. When the atom is located near the D0–M interface, the normalized atomic SE rate as a function of the atomic position is abruptly onset for the thin D1 layer. However, with the increasing thickness of the D1 layer, the corresponding curve profile exhibits plateau and stays nearly unchanged. The substantial change of the SE rate stems from the excitation of the surface plasmon polaritons in metal-dielectric interface, and the feature crucially depends on the thickness of D1 layer. If atoms are positioned near the D0–air interface, the substantial variation of the normalized SE rate appears when rotating the polarized direction of atoms. These findings manifest that the atomic SE processes can be flexibly controlled by altering the thickness of the dielectric layer D1 or rotating the orientation of the polarization of atoms.

Published
2007

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