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Your search keyword '"Zhao, Qing-Tai"' showing total 14 results
Start Over Author "Zhao, Qing-Tai" Publisher iop publishing
14 results on '"Zhao, Qing-Tai"'

2. Phase evolution of ultra-thin Ni silicide films on CF4 plasma immersion ion implanted Si.

Author

Zhao, Lan-Tian, Liu, Mingshan, Ren, Qing-Hua, Liu, Chen-He, Liu, Qiang, Chen, Ling-Li, Spiegel, Yohann, Torregrosa, Frank, Yu, Wenjie, and Zhao, Qing-Tai

Subjects
PLASMA immersion ion implantation, LOW temperatures, THERMAL stability
Abstract

We present a systematic study on the effects of CF4 plasma immersion ion implantation (PIII) in Si on the phase evolution of ultra-thin Ni silicides. For 3 nm Ni, NiSi2 was formed on Si substrates with and without CF4 PIII at temperature as low as 400 °C. For 6 nm Ni, NiSi was formed on pure Si, while epitaxial NiSi2 was obtained on CF4 PIII Si. The incorporation of C and F atoms in the thin epitaxial NiSi2 significantly reduces the layer resistivity. Increasing the Ni thickness to 8 nm results in the formation of NiSi, where the thermal stability of NiSi, the NiSi/Si interface and Schottky contacts are significantly improved with CF4 PIII. We suggest that the interface energy is lowered by the F and C dopants present in the layer and at the interface, leading to phase evolution of the thin Ni silicide. [ABSTRACT FROM AUTHOR]

Published
2020
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6. Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs

Author

Wen Jiao, Yu Wenjie, Xue Zhongying, Wang Yize, Liu Chang, Di Zengfeng, Liu Qiang, Zhao Qing-Tai, and Zhang Bo

Subjects
010302 applied physics, Physics, Elastic scattering, Electron mobility, Condensed matter physics, Phonon scattering, Scattering, Phonon, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, 0103 physical sciences, MOSFET, Materials Chemistry, Electrical and Electronic Engineering, 0210 nano-technology, Quantum well
Abstract

sSi/Si0.5Ge0.5/sSOI quantum-well (QW) p-MOSFETs with HfO2/TiN gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si0.5Ge0.5 QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below 150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/SiGe heterostructure, which led to a degradation of carrier mobility in the SiGe channel, especially at low temperature.

Published
2016

7. Ion-beam-induced solid phase crystallization of MeV Si + -implanted Si(100)

Author

Li Dai-qing, Xu Tian-bing, Zhu Peiran, Liu Jie-tian, Liu Xiang-Dong, Ren Ting-qi, Zhao Qing-tai, and Zhou Jun-si

Subjects
Materials science, Ion beam, Annealing (metallurgy), Analytical chemistry, General Physics and Astronomy, Epitaxy, Amorphous solid, law.invention, Condensed Matter::Materials Science, law, Physics::Accelerator Physics, Growth rate, Irradiation, Crystallization, Excitation
Abstract

The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si+ irradiation at 300°C in Si(100) was studied by Rutherford backscattering and channeling technique. Solid phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline (a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam. Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface.

Published
1995

8. Tilted Angle Implantation of Xe Ions in potassium Titanyl Phosphate

Author

Liu Ji-Tian, Zhao Qing-Tai, Liu Xiang-Dong, Wang Zhong-Lie, Liu Yao-Gang, Shi Bo-Rong, and Wang Ke-Ming

Subjects
chemistry.chemical_compound, Optics, Materials science, chemistry, business.industry, Analytical chemistry, Potassium titanyl phosphate, General Physics and Astronomy, business, Ion
Abstract

200 ke V Xe ions were implanted in potassium titanyl phosphate (KTP) at deferent angles: 0°, 45° and 60°. The lateral spread of Xe ions in KTP was studied by Rutherford backscattering of 2.1 Me V He ions. The result is compared with the theoretical prediction. The lateral spread is found in good agreement with calculated value within 17%.

Published
1991

12. Dislocation-Based Si-Nanodevices

Author

Reiche, Manfred, primary, Kittler, Martin, additional, Buca, Dan, additional, Hähnel, Angelika, additional, Zhao, Qing-Tai, additional, Mantl, Siegfried, additional, and Gösele, Ulrich, additional

Published
2010
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