1. AgNWs/AZO composite electrode for transparent inverted ZnCdSeS/ZnS quantum dot light-emitting diodes
- Author
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Guo Liu, Yuting Ma, Zhiyao Song, Yimeng Guo, Xiaohong Jiang, Aqiang Wang, and Zuliang Du
- Subjects
Materials science ,Nanowire ,Bioengineering ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,law.invention ,Atomic layer deposition ,law ,General Materials Science ,Electrical and Electronic Engineering ,Sheet resistance ,Diode ,business.industry ,Mechanical Engineering ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Anode ,Mechanics of Materials ,Quantum dot ,Electrode ,Optoelectronics ,0210 nano-technology ,business ,Light-emitting diode - Abstract
Fully transparent inverted quantum dot light-emitting diodes (QLEDs) were fabricated by incorporating a Ag-nanowire-based anode. Aluminum-doped zinc oxide (ZnO:Al, AZO) was inserted by atomic layer deposition and reduced the sheet resistance by promoting adhesion of Ag nanowires (AgNWs) film and increasing its chemical stability towards oxygen. The performance of the QLEDs was optimal when the thickness of AZO was 20 nm. The current efficiency of the fully transparent inverted QLEDs integrated with the AgNWs/AZO anode reached 15.33 cd A-1. The main peak wavelength and optical transmittance of the inverted QLEDs were 530 nm and 75.66%, respectively. This discovery is expected to provide a basic method for the production of flexible displays with full transparency by AgNWs-based electrodes.
- Published
- 2019