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Your search keyword '"Zhou, Y. C."' showing total 20 results
Start Over Author "Zhou, Y. C." Publisher iop publishing
20 results on '"Zhou, Y. C."'

18. Retention loss in the ferroelectric (SrBi2Ta2O9)-insulator (HfO2)-silicon structure studied by piezoresponse force microscopy.

Author

Zhang, Z. H., Zhong, X. L., Zhang, Y., Wang, J. B., Lu, C. J., Ye, W. N., and Zhou, Y. C.

Abstract

Metal-ferroelectric-insulator-silicon (MFIS) structures with SrBi2Ta2O9 as ferroelectric thin film and HfO2 as insulating buffer layer were fabricated by pulsed-laser deposition. The interfaces and memory window of the MFIS structure were investigated. Piezoresponse force microscopy was used to observe the change of domain images in order to investigate the retention characteristics, which demonstrated that the MFIS structure experiences retention loss via a random-walk–type process, identified by a stretched exponential-decay model. The corresponding mechanism was discussed based on the time-dependent depolarization field. [ABSTRACT FROM AUTHOR]

Published
2012
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19. Polar ZnO thin-film nonvolatile transistors with (Bi, Nd)4Ti3O12 gate insulators.

Author

Tan, Q. H., Wang, J. B., Zhong, X. L., Wang, Q. J., Zhang, Y., and Zhou, Y. C.

Abstract

Polar ZnO thin-film transistors (TFTs) with (Bi,Nd)4Ti3O12 (BNT) as well as SiO2 gate insulators were fabricated. The polarization-voltage (P-V) hystersis loops of ZnO/BNT and BNT films and the electrical properties of prepared TFTs were investigated. The P-V loop of a ZnO/BNT film shows obvious asymmetrical widening. The threshold voltage, channel mobility, and on/off ratio of ZnO/BNT TFTs reach to 1.3 V, 3.5 cm2 V−1 s−1, and 8×107, respectively. Notably, the device shows a nearly unchanged memory window of about 3.9 V after a 24 h retention test and a large drain-current on/off ratio of about 107 after a 24 h data retention test. These can be mainly attributed to the polarization interaction and the relatively good interface properties between a ZnO film and a BNT film. These results suggest that the ZnO/BNT TFTs are suitable for nonvolatile digital circuits on a flat panel display system. [ABSTRACT FROM AUTHOR]

Published
2012
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