35 results on '"de Gendt, Stefan"'
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2. Tuning the spintronic properties of graphene with atomically precise Au clusters
3. Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key
4. Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2
5. Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces
6. Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key.
7. A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion
8. Wet Chemical Processing of Ge in Acidic H2O2 Solution: Nanoscale Etching and Surface Chemistry.
9. Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2.
10. (Invited) Enabling High Quality Dielectric Passivation on Monolayer WS2 Using a Sacrificial Graphene Oxide Template.
11. Investigating the Metal-Plasma Interaction during the Patterning of MgZnO Alloys, Used for Compute and Memory Applications.
12. Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity
13. Two-dimensional WS2nanoribbon deposition by conversion of pre-patterned amorphous silicon
14. Integration of porous low-kdielectrics using post porosity pore protection
15. Growth of Millimeter-Sized Graphene Single Crystals on Al2O3(0001)/Pt(111) Template Wafers Using Chemical Vapor Deposition.
16. Mitigation of plasma-induced damage in porous low-kdielectrics by cryogenic precursor condensation
17. Insight on the Characterization of MoS2 Based Devices and Requirements for Logic Device Integration.
18. Single-Layer Graphene Synthesis on a Al2O3(0001)/Cu(111) Template Using Chemical Vapor Deposition.
19. Demonstration of Direction Dependent Conduction through MoS2 Films Prepared by Tunable Mass Transport Fabrication.
20. Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications
21. Carbon nanotube growth from Langmuir–Blodgett deposited Fe3O4nanocrystals
22. Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects
23. Bandgap opening in oxygen plasma-treated graphene
24. Wet-Chemical Approaches for Atomic Layer Etching of Semiconductors: Surface Chemistry, Oxide Removal and Reoxidation of InAs (100).
25. Nanoscale Etching of In0.53Ga0.47As in H202/HC1 Solutions for Advanced CMOS Processing.
26. Graphene Transistors and Photodetectors.
27. Integration of Vertical Carbon Nanotube Bundles for Interconnects.
28. Electrochemical Tailoring of Catalyst Nanoparticles for CNT Spatial-Dimension Control.
29. Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO2 Gate Dielectrics.
30. The Importance of Moisture Control for EOT Scaling of Hf-Based Dielectrics.
31. Investigation on Molybdenum and Its Conductive Oxides as p-Type Metal Gate Candidates.
32. O Tempora! O Mores!
33. Life as Usual in a Globally Changed World.
34. (Invited) Atomic-Scale Investigations on the Wet Etching of Group IV Semiconductors in Acidic H2O2 Solution: The Case Ge Versus Si-Ge.
35. Properties and Applications of 2-Dimensional Layered Materials.
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