1. Pressure-induced shift of effective Ce valence, Fermi energy and phase boundaries in CeOs4Sb12
- Author
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K Götze, M J Pearce, M J Coak, P A Goddard, A D Grockowiak, W A Coniglio, S W Tozer, D E Graf, M B Maple, P-C Ho, M C Brown, and J Singleton
- Subjects
pressure ,valence transition ,CeOs4Sb12 ,quantum oscillations ,quantum criticality ,Science ,Physics ,QC1-999 - Abstract
CeOs _4 Sb _12 , a member of the skutterudite family, has an unusual semimetallic low-temperature $\mathcal{L}$ -phase that inhabits a wedge-like area of the field H —temperature T phase diagram. We have conducted measurements of electrical transport and megahertz conductivity on CeOs _4 Sb _12 single crystals under pressures of up to 3 GPa and in high magnetic fields of up to 41 T to investigate the influence of pressure on the different H – T phase boundaries. While the high-temperature valence transition between the metallic $\mathcal{H}$ -phase and the $\mathcal{L}$ -phase is shifted to higher T by pressures of the order of 1 GPa, we observed only a marginal suppression of the $\mathcal{S}$ -phase that is found below 1 K for pressures of up to 1.91 GPa. High-field quantum oscillations have been observed for pressures up to 3.0 GPa and the Fermi surface of the high-field side of the $\mathcal{H}$ -phase is found to show a surprising decrease in size with increasing pressure, implying a change in electronic structure rather than a mere contraction of lattice parameters. We evaluate the field-dependence of the effective masses for different pressures and also reflect on the sample dependence of some of the properties of CeOs _4 Sb _12 which appears to be limited to the low-field region.
- Published
- 2022
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