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Start Over Descriptor "high-power device" Publisher linkoping univ, dept phys & measurement technol, se-58183 linkoping, sweden
1 results on '"high-power device"'

1. Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films

Author

Wahab, Qamar Ul, Ellison, A, Zhang, J, Forsberg, Urban, Duranova, E, Henry, Anne, Madsen, LD, Janzén, Erik, Wahab, Qamar Ul, Ellison, A, Zhang, J, Forsberg, Urban, Duranova, E, Henry, Anne, Madsen, LD, and Janzén, Erik

Abstract

Physical simulation, fabrication and characterization of high-voltage Ni/4H-SiC Schottky rectifiers are studied. We demonstrate a blocking voltage of 3.85 kV by utilizing a 43 mum thick low doped 4H-SiC epilayer in vertical hot-wall Chimney CVD reactor. A high breakdown voltage of 3.56 kV was achieved on a layer grown by conventional hot-wall CVD reactor. The reverse leakage current on CVD sample was as low as 5 x 10(-6) A cm(-2) at 3.5 kV just before the breakdown.

Published
2000
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