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Start Over Descriptor "Synchrotron topography" Publisher linkopings universitet, ekonomiska institutionen
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1. Properties of different stacking faults that cause degradation in SiC PiN diodes

Author

Jacobson, Herbert, Bergman, JP, Hallin, Christer, Tuomi, T, Janzén, Erik, Jacobson, Herbert, Bergman, JP, Hallin, Christer, Tuomi, T, and Janzén, Erik

Abstract

The electrical degradation of 4H-SiC PiN diodes has recently attracted a large interest and is a critical material problem for high power applications. The degradation is observed as an increased forward voltage drop after forward injection operation. In this paper we present the identity, properties and origin of stacking faults with different nature that cause degradation of 4H-SiC PiN diodes.

Published
2003

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