1. High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment
- Author
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Hsiao, C.L., Liu, T.W., Wu, C.T., Hsu, H.C., Hsu, G.M., Chen, L.C., Shiao, W.Y., Yang, C.C., Gällström, Andreas, Holtz, Per-Olof, Chen, C.C., Chen, K.H., Hsiao, C.L., Liu, T.W., Wu, C.T., Hsu, H.C., Hsu, G.M., Chen, L.C., Shiao, W.Y., Yang, C.C., Gällström, Andreas, Holtz, Per-Olof, Chen, C.C., and Chen, K.H.
- Abstract
High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors. © 2008 American Institute of Physics.
- Published
- 2008
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