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The main aim of this work is to present a step-by-step procedure to model and analyze the power loss distribution of three-level Gallium Nitride (GaN) inverters. It has been applied to three distinct three-phase three-level voltage source inverters utilized in electric traction drives: Active Neutral Point Clamped, Neutral Point Clamped and T-Type Neutral Point Clamped. The proposed analytical power loss modelling, combined with an equivalent representation of the electrical machine proved to be a viable solution to achieve a time-saving and low computational burden simulation platform, leading to satisfying accurate results. This has been confirmed by comparing the results carried out from the simulations of a 110 kW permanent magnet synchronous motor drive and those determined by considering a simplified circuital representation based on the proposed analytical power loss modelling. [ABSTRACT FROM AUTHOR]

A technique to improve the performance of grid-connected induction motors by exploiting an auxiliary winding set is proposed in this paper. This auxiliary winding features the same distribution of the main winding, although with a reduced number of turns and it is fed by an inverter a fraction of the power in comparison with the rated size of the induction motor. As shown in the paper, through the auxiliary winding, it is possible to set the machine power factor, increasing the efficiency of the power conversion system and mitigating speed oscillations due to torque disturbances. A mitigation of the grid current peaks due to motor start-up is obtainable. First, the proposed technique is theoretically introduced, then a feasibility assessment is accomplished by simulations. [ABSTRACT FROM AUTHOR]

A three-phase multi-level multi-input power converter topology is presented for grid-connected applications. It encompasses a three-phase transformer that is operated on the primary side in an open-end winding configuration. Thus, the primary winding is supplied on one side by a three-phase N-level neutral point clamped inverter and, on the other side, by an auxiliary two-level inverter. A key feature of the proposed approach is that the N-level inverter is able to perform independent management of N − 1 input power sources, thus avoiding the need for additional dc/dc power converters in hybrid multi-source systems. Moreover, it can manage an energy storage system connected to the dc-bus of the two-level inverter. The N-level inverter operates at a low switching frequency and can be equipped with very low on-state voltage drop Insulated-Gate Bipolar Transistor (IGBT) devices, while the auxiliary inverter is instead operated at low voltage according to a conventional high-frequency two-level Pulse Width Modulation (PWM) technique and can be equipped with very low on-state resistance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices. Simulations and experimental results confirm the effectiveness of the proposed approach and its good performance in terms of grid current harmonic content and overall efficiency. [ABSTRACT FROM AUTHOR]

This work presents a step-by-step procedure to estimate the lifetime of discrete SiC power MOSFETs equipping three-phase inverters of electric drives. The stress of each power device when it is subjected to thermal jumps from a few degrees up to about 80 °C was analyzed, starting from the computation of the average power losses and the commitment of the electric drive. A customizable mission profile was considered where, by accounting the working conditions of the drive, the corresponding average power losses and junction temperatures of the SiC MOSFETs composing the inverter can be computed. The tool exploits the Coffin–Manson theory, rainflow counting, and Miner's rule for the lifetime estimation of the semiconductor power devices. Different operating scenarios were investigated, underlying their impact on the lifetime of SiC MOSFETs devices. The lifetime estimation procedure was realized with the main goal of keeping limited computational efforts, while providing an effective evaluation of the thermal effects. The method enables us to set up any generic mission profile from the electric drive model. This gives us the possibility to compare several operating scenario of the drive and predict the worse operating conditions for power devices. Finally, although the lifetime estimation tool was applied to SiC power MOSFET devices for a general-purpose application, it can be extended to any type of power switch technology. [ABSTRACT FROM AUTHOR]