1. A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications.
- Author
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Min-Cheng Chen, Hao-Yu Chen, Chia-Yi Lin, Chao-Hsin Chien, Tsung-Fan Hsieh, Jim-Tong Horng, Jian-Tai Qiu, Chien-Chao Huang, Chia-Hua Ho, and Fu-Liang Yang
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SOLID freeform fabrication , *NANOWIRES , *FIELD-effect transistors , *COMPLEMENTARY metal oxide semiconductors , *LITHOGRAPHY , *NONVOLATILE memory , *EQUIPMENT & supplies - Abstract
This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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