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The multi-chiplet technique is expected to be a promising solution to achieve high-density system integration with low power consumption and high usage ratio. This technique can be integrated with a glass interposer to accomplish a competitive low fabrication cost compared with the silicon-based interposer architecture. In this study, process-oriented stress simulation is performed by the element activation and deactivation technique in finite element analysis architecture. The submodeling technique is also utilized to mostly conquer the scale mismatch and difficulty in mesh gridding design. It is also used to analyze the thermomechanical responses of glass interposers with chiplet arrangements and capped epoxy molding compounds (EMC) during curing. A three-factor, three-level full factorial design is applied using the analysis of variance method to explore the significance of various structural design parameters for stress generation. Analytic results reveal that the maximum first principal stresses of 130.75 and 17.18 MPa are introduced on the sidewall of Cu-filled via and the bottom of the glass interposer, respectively. Moreover, the EMC thickness and through glass via pitch are the dominant factors in the adopted vehicle. They significantly influence the stress magnitude during heating and cooling. [ABSTRACT FROM AUTHOR]

In glass interposer architecture and its assembly process, the mechanical responses of interposer structure under thermocompression process-induced thermal loading and generated shrinkage of molding material are regarded as a major reliability issue. Thousands of metal-filled via are involved in glass interposers and are regarded as a potential risk that can lead to cracking and the failure of an entire vehicle. In this study, a finite element-based submodeling approach is demonstrated to overcome the complexity of modeling and the relevant convergence issue of interposer architecture. Convergence analysis results revealed that at least four via pitch-wide regions of a local simulation model were needed to obtain the stable results enabled by the submodeling simulation approach. The stress-generation mechanism during thermocompression, the coefficient of thermal expansion mismatch, and the curing process-induced shrinkage were separately investigated. The critical stress location was explored as the outer corner of the chip, and the maximum first principal stress during the thermocompression process generated on the chip and glass interposer were 34 and 120 MPa, respectively. [ABSTRACT FROM AUTHOR]

The microbump (μ-bump) reliability of 3D integrated circuit (3D-IC) packaging must be enhanced, in consideration of the multi-chip assembly, during temperature cycling tests (TCT). This research proposes vehicle fabrications, experimental implements, and a nonlinear finite element analysis to systematically investigate the assembled packaging architecture that stacks four thin chips through the wafer level underfill (WLUF) process. The assembly of μ-bump interconnects by daisy chain design shows good quality. Results of both TCT data and the simulation indicate that μ-bumps with residual SnAg solders can reach more than 1200 fatigue life cycles. Moreover, several important design factors in the present 3D-IC package influence μ-bump reliability. Analytical results show that the μ-bump's thermo-mechanical reliability can be improved by setting proper chip thickness, along with a WLUF that has a low elastic modulus and a small coefficient of thermal expansion. [ABSTRACT FROM AUTHOR]

The suitability of stacked thin films for next-generation display technology was analyzed based on their properties and geometrical designs to evaluate the mechanical reliability of transparent conducting thin films utilized in flexural displays. In general, the high bending stress induced by various operation conditions is a major concern regarding the mechanical reliability of indium-tin-oxide (ITO) films deposited on polyethylene terephthalate (PET) substrates; mechanical reliability is commonly used to estimate the flexibility of displays. However, the pattern effect is rarely investigated to estimate the mechanical reliability of ITO/PET films. Thus, this study examined the flexible content of patterned ITO/PET films with two different line widths by conducting bending tests and sheet resistance measurements. Moreover, a stress-strain simulation enabled by finite element analysis was performed on the patterned ITO/PET to explore the stress impact of stacked film structures under various levels of flexural load. Results show that the design of the ITO/PET film can be applied in developing mechanically reliable flexible electronics. [ABSTRACT FROM AUTHOR]

A three-dimensional integrated circuit (3D-IC) structure with a significant scale mismatch causes difficulty in analytic model construction. This paper proposes a simulation technique to introduce an equivalent material composed of microbumps and their surrounding wafer level underfill (WLUF). The mechanical properties of this equivalent material, including Young's modulus (E), Poisson's ratio, shear modulus, and coefficient of thermal expansion (CTE), are directly obtained by applying either a tensile load or a constant displacement, and by increasing the temperature during simulations, respectively. Analytic results indicate that at least eight microbumps at the outermost region of the chip stacking structure need to be considered as an accurate stress/strain contour in the concerned region. In addition, a factorial experimental design with analysis of variance is proposed to optimize chip stacking structure reliability with four factors: chip thickness, substrate thickness, CTE, and E-value. Analytic results show that the most significant factor is CTE of WLUF. This factor affects microbump reliability and structural warpage under a temperature cycling load and high-temperature bonding process. WLUF with low CTE and high E-value are recommended to enhance the assembly reliability of the 3D-IC architecture. [ABSTRACT FROM AUTHOR]

Stress-induced performance change in electron packaging architecture is a major concern when the keep-out zone (KOZ) and corresponding integration density of interconnect systems and transistor devices are considered. In this study, a finite element analysis (FEA)-based submodeling approach is demonstrated to analyze the stress-affected zone of through-silicon via (TSV) and its influences on a planar metal oxide semiconductor field transistor (MOSFET) device. The feasibility of the widely adopted analytical solution for TSV stress-affected zone estimation, Lamé radial stress solution, is investigated and compared with the FEA-based submodeling approach. Analytic results reveal that the Lamé stress solution overestimates the TSV-induced stress in the concerned device by over 50%, and the difference in the estimated results of device performance between Lamé stress solution and FEA simulation can reach 22%. Moreover, a silicon–germanium-based lattice mismatch stressor is designed in a silicon p-type MOSFET, and its effects are analyzed and compared with those of TSV residual stress. The S/D stressor dominates the stress status of the device channel. The demonstrated FEA-based submodeling approach is effective in analyzing the stress impact from packaging and device-level components and estimating the KOZ issue in advanced electronic packaging. [ABSTRACT FROM AUTHOR]

This study uses the finite element analysis (FEA)-based atomistic-continuum method (ACM) combined with the Morse potential of metals to determine the effects of the elastic modulus (E) of a given example on atomic-level single-crystal copper (Cu). This work aims to overcome the estimated drawback of a molecular dynamic calculation applied to the mechanical response of macro in-plane-sized and atomic-level-thick metal-based surface coatings. The interactive energy of two Cu atoms within a face-centered metal lattice was described by a mechanical response of spring stiffness. Compared with the theoretical value, the parameters of the Morse potential dominated the predicted accuracy through the FEA-based ACM. Moreover, the analytic results indicated that the effective E of a single-crystal Cu was significantly sensitive to the given range of the interactive force field among atoms. The reliable elastic moduli of 86.8, 152.6, and 205.2 GPa along the Cu(100), Cu(110), and Cu(111) orientations of the Cu metal were separately acquired using the presented FEA-based ACM methodology. [ABSTRACT FROM AUTHOR]