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In this work, we experimentally analyze the periodic oscillations that take place in staircase APDs with separate absorption and multiplication regions when operating under continuous laser light. These oscillations increase in frequency when the APD gain increases. We have verified that they are not affected by the parameters (gain and bandwidth) of the transimpedance amplifier, and thus originate inside the APD. The phenomenon is analyzed systematically by considering devices with different thicknesses of the absorption region. Possible physical interpretations related to the flux of holes generated by impact ionization are provided. [ABSTRACT FROM AUTHOR]

In hard X-ray applications that require high detection efficiency and short response times, such as synchrotron radiation-based Mössbauer absorption spectroscopy and time-resolved fluorescence or photon beam position monitoring, III–V-compound semiconductors, and dedicated alloys offer some advantages over the Si-based technologies traditionally used in solid-state photodetectors. Amongst them, gallium arsenide (GaAs) is one of the most valuable materials thanks to its unique characteristics. At the same time, implementing charge-multiplication mechanisms within the sensor may become of critical importance in cases where the photogenerated signal needs an intrinsic amplification before being acquired by the front-end electronics, such as in the case of a very weak photon flux or when single-photon detection is required. Some GaAs-based avalanche photodiodes (APDs) were grown by a molecular beam epitaxy to fulfill these needs; by means of band gap engineering, we realised devices with separate absorption and multiplication region(s) (SAM), the latter featuring a so-called staircase structure to reduce the multiplication noise. This work reports on the experimental characterisations of gain, noise, and charge collection efficiencies of three series of GaAs APDs featuring different thicknesses of the absorption regions. These devices have been developed to investigate the role of such thicknesses and the presence of traps or defects at the metal–semiconductor interfaces responsible for charge loss, in order to lay the groundwork for the future development of very thick GaAs devices (thicker than 100 μ m) for hard X-rays. Several measurements were carried out on such devices with both lasers and synchrotron light sources, inducing photon absorption with X-ray microbeams at variable and controlled depths. In this way, we verified both the role of the thickness of the absorption region in the collection efficiency and the possibility of using the APDs without reaching the punch-through voltage, thus preventing the noise induced by charge multiplication in the absorption region. These devices, with thicknesses suitable for soft X-ray detection, have also shown good characteristics in terms of internal amplification and reduction of multiplication noise, in line with numerical simulations. [ABSTRACT FROM AUTHOR]

Public transport use has drastically declined during the COVID-19 pandemic because the virus spreads through close contact with infected people and contaminated surfaces, especially in closed-environments. Evidence suggests that following the necessary safety guidelines can limit the spread of the virus, however, non-compliance to precautionary measures has been reported widely. Ignoring the precautionary measures may lead to quick transmission of the virus since public transport vehicles generally resemble closed-environments. This study explores people's intentions to use public transport during the COVID-19 pandemic while adhering to precautionary measures. For this purpose, a total of 1516 useable responses were collected through a questionnaire survey conducted in Lahore, Pakistan. Regression models were developed to model the intentions to use public transport during the pandemic, to adhere to the precautionary measures while using public transport during the pandemic, and to use public transport while suffering from COVID-19 disease. The results of this study will help in understanding the intentions of the public transport users during the COVID-19 pandemic. It will also provide insights for policymakers and public transport operators about further necessary actions to promote safe public transport use during the current and any possible future pandemics. As public transport use declined during the pandemic, policy implications for alternative mobility options such as demand-responsive-transport (DRT) are also presented. Considering the study results, a policy interventions framework is proposed to promote the safe use of various public transport modes, particularly in developing regions. [ABSTRACT FROM AUTHOR]

Bismuth oxychloride photocatalysts were obtained using solvothermal synthesis and different additives (CTAB—cetyltrimethylammonium bromide, CTAC—cetyltrimethylammonium chloride, PVP–polyvinylpyrrolidone, SDS–sodium dodecylsulphate, U—urea and TU—thiourea). The effect of the previously mentioned compounds was analyzed applying structural (primary crystallite size, crystal phase composition, etc.), morphological (particle geometry), optical (band gap energy) parameters, surface related properties (surface atoms' oxidation states), and the resulted photocatalytic activity. A strong dependency was found between the surface tension of the synthesis solutions and the overall morpho-structural parameters. The main finding was that the characteristics of the semiconductors can be tuned by modifying the surface tension of the synthesis mixture. It was observed after the photocatalytic degradation, that the white semiconductor turned to grey. Furthermore, we attempted to explain the gray color of BiOCl catalysts after the photocatalytic decompositions by Raman and XPS studies. [ABSTRACT FROM AUTHOR]

In various fields such as the 5G antenna system and satellite communication system, there is a growing demand to develop a smart antenna with a frequency selective or beamforming function within a limited space. While antennas utilizing mechanical, electronic, and material characteristics are being studied, a method of having tunable frequency characteristics by applying a liquid crystal material with dielectric anisotropy to a planar patch antenna is proposed. In resonance mode, the design method for using only the minimum amount of expensive liquid crystals is systematically arranged while maximizing the amount of change in the operating frequency of the antenna by considering the electric field distribution on the surface of the patch antenna. Furthermore, to increase the dielectric anisotropy of the liquid crystal, the liquid crystal must be aligned. Simultaneously, in cases where the cell gap of the liquid crystal exceeds 100 μm, the alignment force is weakened. While compensating for this shortcoming, securing the radiation characteristics of the antenna is proposed, and simulations are performed. [ABSTRACT FROM AUTHOR]

We report on the systematic study of two main scattering mechanisms on intersubband transitions, namely ionized impurity scattering and interface roughness scattering. The former mechanism has been investigated as a function of the dopants position within a multiple GaAs/AlGaAs quantum well structure and compared to the transition of an undoped sample. The study on the latter scattering mechanism has been conducted using the growth interruption technique. We report an improvement of the intersubband (ISB) transition linewidth up to 11% by interrupting growth at GaAs-on-AlGaAs interfaces. As a result, the lifetime of intersubband polaritons could be improved up to 9%. This leads to a reduction of 17% of the theoretical threshold intensity for polaritonic coherent emission. This work brings a useful contribution towards the realization of polariton-based devices. [ABSTRACT FROM AUTHOR]

Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. However, the single-dot occupancy per hole is often made difficult by the fact that lithographically-defined holes are generally much larger than the dots, thus providing several nucleation sites per hole. In addition, deposition of a thin GaAs buffer before the dots tends to further widen the holes in the [110] direction. We have explored a method of native surface oxide removal by using indium beams, which effectively prevents hole elongation along [110] and greatly helps single-dot occupancy per hole. Furthermore, as compared to Ga-assisted deoxidation, In-assisted deoxidation is efficient in completely removing surface contaminants, and any excess In can be easily re-desorbed thermally, thus leaving a clean, smooth GaAs surface. Low temperature photoluminescence showed that inhomogeneous broadening is substantially reduced for QDs grown on In-deoxidized patterns, with respect to planar self-assembled dots.