1. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching
- Author
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Chao Zhao, Tianyi Tang, Zhaonan Li, Jiaqian Sun, Bo Xu, Adel Najar, and Abdul Kareem K. Soopy
- Subjects
Materials science ,Nanostructure ,General Chemical Engineering ,02 engineering and technology ,Review ,Nitride ,Photochemistry ,01 natural sciences ,law.invention ,GaN ,Crystal ,lcsh:Chemistry ,law ,Etching (microfabrication) ,molecular beam epitaxy ,0103 physical sciences ,General Materials Science ,Diode ,010302 applied physics ,InGaN ,photochemical etch ,Doping ,021001 nanoscience & nanotechnology ,Laser ,lcsh:QD1-999 ,0210 nano-technology ,Molecular beam epitaxy - Abstract
This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.
- Published
- 2021