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Recent progress in Type-II strained layer superlattice (SLS) material systems has offered viable alternatives towards achieving large format, small-pitch, and low-cost focal plane arrays for different military and commercial applications. For focal plane array fabrication, in order to address difficulties associated with mesa-isolation etching or the complex surface treatment/ passivation process, planar structures have been considered. In this work, a comparative study on the recent progress on the planar SLS photodetector using ion-implantation for device isolation is presented. The devices presented here are nBn and pBn heterostructure InAs/InAsSb SLS photodetectors, where Zn and Si were chosen as the ion implants, respectively. The electrical and optical performance of the planar devices were compared to each other and with associated mesa-etched fabricated devices, to give a deeper view of the device performance. [ABSTRACT FROM AUTHOR]

The thermal treatment method was employed to prepare nickel-cobalt oxide (NiO/Co3O4) nanoparticles. This method was attempted to achieve the higher homogeneity of the final product. Specimens of nickel-cobalt oxide were characterized by various experimental techniques, including X-ray diffraction (XRD), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FTIR). X-ray diffraction results showed that there was no crystallinity in the predecessor, and it still had the amorphous phase. The formations of the crystalline phases of the nickel-cobalt oxide nanoparticles started from 350-500 °C, and the final products had different crystallite sizes ranging from 11-35 nm. Furthermore, the variation of DC conductivity (σdc), impedance, tangent loss (tgδ) and dielectric constant (ε') of the calcined specimens with frequency in the range of 10²-106 Hz was investigated. σdc showed a value of 1.9 × 10-6 S/m, 1.3 × 10-6 S/m and 1.6 × 10-6 S/m for the specimens calcined at 350, 400 and 450 °C, respectively. Additionally, a decrease in tgσ values with an increase in temperature was observed. Finally, the formed nanoparticles exhibited ferromagnetic behaviors, which were confirmed by using a vibrating sample magnetometer (VSM). [ABSTRACT FROM AUTHOR]

Polyimide/SiO2 composite films were prepared from tetraethoxysilane (TEOS) and poly(amic acid) (PAA) based on aromatic diamine (4-aminophenyl sulfone) (4-APS) and aromatic dianhydride (3,3,4,4-benzophenonetetracarboxylic dianhydride) (BTDA) via a sol-gel process in N-methyl-2-pyrrolidinone (NMP). The prepared polyimide/SiO2 composite films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and thermogravimetric analysis (TGA). The FTIR results confirmed the synthesis of polyimide (4-APS/BTDA) and the formation of SiO2 particles in the polyimide matrix. Meanwhile, the SEM images showed that the SiO2 particles were well dispersed in the polyimide matrix. Thermal stability and kinetic parameters of the degradation processes for the prepared polyimide/SiO2 composite films were investigated using TGA in N2 atmosphere. The activation energy of the solid-state process was calculated using Flynn-Wall-Ozawa's method without the knowledge of the reaction mechanism. The results indicated that thermal stability and the values of the calculated activation energies increased with the increase of the TEOS loading and the activation energy also varied with the percentage of weight loss for all compositions. [ABSTRACT FROM AUTHOR]

We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved. [ABSTRACT FROM AUTHOR]

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W. [ABSTRACT FROM AUTHOR]

In this paper, we investigate the effect of lateral gate design on performance of a p-type double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of lateral gate length, which modifies the real channel length of the device and gate gap variation down to 50 nm which have been found to be the most influential factors in the performance of the device have been comprehensively investigated. The characteristics are demonstrated and compared with a nominal DGJLTs through three-dimensional technology computer-aided design (TCAD) simulation. At constant channel geometry (thickness and width), when the lateral gate length decreases, the results show constant flatband drain current characteristics while the OFF state current (IOFF) increases significantly. On the other hand, by decreasing the air gap the subthreshold current considerably decreases while the flatband current is constant. Moreover, at a certain gate gap, the gates lose control over the channel and the device simply works as a resistor. Electric field component, carriers' density, band edge energies, and recombination rate of the carriers inside the channel in depletion and accumulation regimes are analysed to interpret the variation of output characteristics. [ABSTRACT FROM AUTHOR]

Polyimide/SiO(2) composite films were prepared from tetraethoxysilane (TEOS) and poly(amic acid) (PAA) based on aromatic diamine (4-aminophenyl sulfone) (4-APS) and aromatic dianhydride (3,3,4,4-benzophenonetetracarboxylic dianhydride) (BTDA) via a sol-gel process in N-methyl-2-pyrrolidinone (NMP). The prepared polyimide/SiO(2) composite films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and thermogravimetric analysis (TGA). The FTIR results confirmed the synthesis of polyimide (4-APS/BTDA) and the formation of SiO(2) particles in the polyimide matrix. Meanwhile, the SEM images showed that the SiO(2) particles were well dispersed in the polyimide matrix. Thermal stability and kinetic parameters of the degradation processes for the prepared polyimide/SiO(2) composite films were investigated using TGA in N(2) atmosphere. The activation energy of the solid-state process was calculated using Flynn-Wall-Ozawa's method without the knowledge of the reaction mechanism. The results indicated that thermal stability and the values of the calculated activation energies increased with the increase of the TEOS loading and the activation energy also varied with the percentage of weight loss for all compositions.