1. A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET.
- Author
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Nie, Xinfeng, Wang, Ying, Yu, Chenghao, Fei, Xinxing, Yang, Jianqun, and Li, Xingji
- Subjects
COMPUTER-aided design ,METAL oxide semiconductor field-effect transistors ,FIELD-effect transistors ,BUFFER layers ,ELECTRIC breakdown ,EXPERIMENTAL design - Abstract
Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry. In industrial applications, a common reliability problem in SiC MOSFET is avalanche failure. For applications in an avalanche environment, an improved, vertical, double-diffused MOSFET (VDMOSFET) device has been proposed. In this article, an unclamped inductive switching (UIS) test circuit has been built using the Mixed-Mode simulator in the TCAD simulation software, and the simulation results for UIS are introduced for a proposed SiC-power VDMOSFET by using Sentaurus TCAD simulation software. The simulation results imply that the improved VDMOSFET has realized a better UIS performance compared with the conventional VDMOSFET with a buffer layer (B-VDMOSFET) in the same conditions. Meanwhile, at room temperature, the modified VDMOSFET has a smaller on-resistance (R
on,sp ) than B-VDMOSFET. This study can provide a reference for SiC VDMOSFET in scenarios which have high avalanche reliability requirements. [ABSTRACT FROM AUTHOR]- Published
- 2024
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