1. Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors †
- Author
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Meng-Hsu Wu, Kuo-Yu Chou, Philippe Paillet, Vincent Goiffon, Yin Chin, Lee Chih-Lin, Honyih Tu, Calvin Yi-Ping Chao, and Shang-Fu Yeh
- Subjects
Time delay and integration ,correlated double sampling (CDS) ,Noise reduction ,random telegraph signal (RTS) ,correlated multiple sampling (CMS) ,01 natural sciences ,Biochemistry ,Article ,Analytical Chemistry ,law.invention ,law ,0103 physical sciences ,Electrical and Electronic Engineering ,Image sensor ,Instrumentation ,Leakage (electronics) ,variable junction leakage (VJL) ,010302 applied physics ,Physics ,dark current (DC) ,010308 nuclear & particles physics ,business.industry ,Electrical engineering ,X-ray irradiation ,Atomic and Molecular Physics, and Optics ,Photodiode ,random telegraph noise (RTN) ,CMOS ,CMOS image sensor (CIS) ,business ,MOSFET channel RTN (MC-RTN) ,Charge retention ,Dark current ,gate induced drain leakage (GIDL) - Abstract
In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.
- Published
- 2019