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Fe contamination has always been one of the most critical issues in the integrated circuit (IC) industry due to its catastrophic effect on device reliability and electrical characteristics. With complementary metal oxide semiconductor (CMOS) technology scaling down, this issue has been attracting more attention. In this paper, the impact of Fe impurity on the reliability of gate oxide integrity (GOI) in advanced CMOS technology is investigated. Intentional contamination of polysilicon gates was conducted in both boron- and phosphorus-doped devices. Failure analysis of the gate oxide was conducted with high-resolution transmission electron microscopy (HRTEM) and the energy dispersive X-ray (EDX) technique. The experimental results disclose that the properties of PMOS are much more sensitive to Fe contamination than those of NMOS. It is suggested that the reason for the above phenomena is that Fe precipitates at the PMOS gate/oxide interface but dissolves uniformly in the NMOS poly gate due to lower formation energy of the FeB pair (0.65 eV) in PMOS than that of the P4-Fe cluster (3.2 eV) in NMOS. [ABSTRACT FROM AUTHOR]

The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors. [ABSTRACT FROM AUTHOR]

Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 × 109 cmHz1/2/W at 25 μA and a maximum of 6.2 × 108 cmHz1/2/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption. [ABSTRACT FROM AUTHOR]

In this paper, a novel approach that combines technology computer-aided design (TCAD) simulation and machine learning (ML) techniques is demonstrated to assist the analysis of the performance degradation of GaN HEMTs under hot-electron stress. TCAD is used to simulate the statistical effect of hot-electron-induced, electrically active defects on device performance, while the artificial neural network (ANN) algorithm is tested for reproducing the simulation results. The results show that the ML-TCAD approach can not only rapidly obtain the performance degradation of GaN HEMTs, but can accurately predict the progressive failure under the work conditions with a mean squared error (MSE) of 0.2, informing the possibility of quantitative failure data analysis and rapid defect extraction via the ML-TCAD approach. [ABSTRACT FROM AUTHOR]

The use of Polyvinylidene fluoride (PVDF) membranes is constrained in wastewater treatment because of their hydrophobic nature. Therefore, a large number of researchers have been working on the hydrophilic modification of their surfaces. In this work, a superhydrophilic tea polyphenols/silica composite coating was developed by a one-step process. The composite coating can achieve not only superhydrophilic modification of the surface, but also the inner surface of the porous PVDF membrane, which endows the modified membrane with excellent water permeability. The modified membrane possesses ultrahigh water flux (15,353 L·m−2·h−1). Besides this, the modified membrane can realize a highly efficient separation of oil/water emulsions (above 96%). [ABSTRACT FROM AUTHOR]

The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications. The fabrication of the CMOS-compatible microbolometer infrared focal plane arrays (IRFPAs) is based on the combination of the standard CMOS process and simple post-CMOS micro-electro-mechanical system (MEMS) process. With the technological development, the performance of the commercialized CMOS-compatible microbolometers shows only a small gap with that of the mainstream ones. This paper reviews the basics and recent advances of the CMOS-compatible microbolometer IRFPAs in the aspects of the pixel structure, the read-out integrated circuit (ROIC), the focal plane array, and the vacuum packaging. [ABSTRACT FROM AUTHOR]

In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density of triangular defects (TDs), while no direct correlation between the C/Si ratio and the deep level defect Z1/2 could be confirmed. By adjusting the C/Si ratio, a decrease of several orders of magnitudes in the noise level for the 4H-SiC Schottky barrier diodes (SBDs) could be achieved attributing to the improved epilayer quality with low TD density and low surface roughness. The work should provide a helpful clue for further improving the device performance of both the 4H-SiC SBDs and the Schottky barrier ultraviolet photodetectors fabricated on commercial 4H-SiC wafers. [ABSTRACT FROM AUTHOR]

Gold nanorods (GNRs) are among the most commonly used nanomaterials. However, thus far, little is known about their harmful effects on male reproduction. Studies from our laboratory have demonstrated that GNRs could decrease glycine synthesis, membrane permeability, mitochondrial membrane potential and disrupt blood-testis barrier factors in TM-4 Sertoli cells. Imprinted genes play important roles in male reproduction and have been identified as susceptible loci to environmental insults by chemicals because they are functionally haploid. In this original study, we investigated the extent to which imprinted genes become deregulated in TM-4 Sertoli cells when treated with low dose of GNRs. The expression levels of 44 imprinted genes were analyzed by quantitative real-time PCR in TM-4 Sertoli cells after a low dose of (10 nM) GNRs treatment for 24 h. We found significantly diminished expression of Kcnq1, Ntm, Peg10, Slc22a2, Pwcr1, Gtl2, Nap1l5, Peg3 and Slc22a2, while Plagl1 was significantly overexpressed. Additionally, four (Kcnq1, Slc22a18, Pwcr1 and Peg3) of 10 abnormally expressed imprinted genes were found to be located on chromosome 7. However, no significant difference of imprinted miRNA genes was observed between the GNRs treated group and controls. Our study suggested that aberrant expression of imprinted genes might be an underlying mechanism for the GNRs-induced reproductive toxicity in TM-4 Sertoli cells.

In this paper, hydroxyapatite-carbon nanotube/titania (HA-CNT/TiO(2)) double layer coatings were successfully developed on titanium (Ti) substrates intended for biomedical applications. A TiO(2) coating was firstly developed by anodization to improve bonding between HA and Ti, and then the layer of HA and CNTs was coated on the surface by the sol-gel process to improve the biocompatibility and mechanical properties of Ti. The surfaces of double layer coatings were uniform and crack-free with a thickness of about 7 μm. The bonding strength of the HA-CNT/TiO(2) coating was higher than that of the pure HA and HA-CNT coatings. Additionally, in vitro cell experiments showed that CNTs promoted the adhesion of preosteoblasts on the HA-CNT/TiO(2) double layer coatings. These unique surfaces combined with the osteoconductive properties of HA exhibited the excellent mechanical properties of CNTs. Therefore, the developed HA-CNT/TiO(2) coatings on Ti substrates might be a promising material for bone replacement.