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Multiferroic materials capable of robust magnetoelectric coupling at room temperature are currently being explored for their possible multifunctional device applications. Highly (100)-oriented Pb(Fe0.5Ta0.5)x(Zr0.53Ti0.47)1−x (PZTFTx) thin films (x = 0.2 and 0.3) with a thickness of about 300 nm were grown on La0.67Sr0.33CoO3 (LSCO)-buffered MgO 100-oriented substrates via the pulsed laser deposition method. An analysis of their X-ray diffraction patterns suggests the stabilization of the orthorhombic phase in the thin films at room temperature. Dielectric spectroscopic measurements of the metal–insulator–metal (Pt/PZTFTx/LSCO) thin-film capacitors as a function of temperature revealed a diffuse ferroelectric-to-paraelectric phase transition around Tm ~520 and 560 K for the x = 0.2 and 0.3 thin films, respectively. Well-saturated electrical hysteresis loops with large remanent (Pr) and saturation (Ps) polarizations were observed in these capacitors, which indicates the establishment of intrinsic ferroelectric ordering in the thin films at room temperature. These thin films retained ferromagnetic/ferrimagnetic ordering up to 300 K and showed saturation magnetization values of 8.3 (x = 0.2) and 6.1 (x = 0.3) emu/cm3 at room temperature. The magnetoelectric coupling constants of 2040 mV/cmOe (x = 0.2) and 850 mV/cmOe (x = 0.3), respectively, were obtained at an in-plane bias field at room temperature. The present study demonstrates that PZTFTx thin films are multiferroic at room temperature with large magnetoelectric couplings, and these materials may be suitable for use in magnetic sensors and spintronic device applications. [ABSTRACT FROM AUTHOR]

In this study, we are reporting the impact of the incorporation of ferroelectric nanoparticles (FNPs), such as BaTiO3 (BTO), BiFeO3 (BFO), Bi4NdTi3Fe0.7Ni0.3O15 (BNTFN), and Bi4NdTi3Fe0.5Co0.5O15 (BNTFC), as well as the mass loading of sulfur to fabricated solvent-free sulfur/holey graphene-carbon black/polyvinylidene fluoride (S/FNPs/CBhG/PVDF) composite electrodes to achieve high areal capacity for lithium-sulfur (Li-S) batteries. The dry-press method was adopted to fabricate composite cathodes. The hG, a conductive and lightweight scaffold derived from graphene, served as a matrix to host sulfur and FNPs for the fabrication of solvent-free composites. Raman spectra confirmed the dominant hG framework for all the composites, with strong D, G, and 2D bands. The surface morphology of the fabricated cathode system showed a homogeneous distribution of FNPs throughout the composites, confirmed by the EDAX spectra. The observed Li+ ion diffusion coefficient for the composite cathode started at 2.17 × 10−16 cm2/s (S25(CBhG)65PVDF10) and reached up to the highest value (4.15 × 10−15 cm2/s) for S25BNTFC5(CBhG)60PVDF10. The best discharge capacity values for the S25(CBhG)65PVDF10 and S25BNTFC5(CBhG)60PVDF10 composites started at 1123 mAh/gs and 1509 mAh/gs and dropped to 612 mAh/gs and 572 mAh/gs, respectively, after 100 cycles; similar behavior was exhibited by the other composites that were among the best. These are better values than those previously reported in the literature. The incorporation of ferroelectric nanoparticles in the cathodes of Li-S batteries reduced the rapid formation of polysulfides due to their internal electric fields. The areal capacity for the S25(CBhG)65PVDF10 composites was 4.84 mAh/cm2 with a mass loading of 4.31 mgs/cm2, while that for the S25BNTFC5(CBhG)60PVDF10 composites was 6.74 mAh/cm2 with a mass loading of 4.46 mgs/cm2. It was confirmed that effective FNP incorporation within the S cathode improves the cycling response and stability of cathodes, enabling the high performance of Li-S batteries. [ABSTRACT FROM AUTHOR]

Structure, phonon, and energy storage density in Sr2+-substituted lead-free ferroelectric Ba1−xSrxTiO3 (BSTx) for compositions x = 0.1, 0.3, and 0.7 were investigated using X-ray diffraction, Raman, and ferroelectric polarization measurements as a function of temperature. The samples were tetragonal for x = 0.1 with a large c/a ratio. The tetragonal anisotropy was decreased upon increasing x and transforming to cubic for x = 0.7. The changes in structural and ferroelectric properties were found to be related to the c/a ratios. The temperature-dependent phonon spectroscopy results indicated a decrease in tetragonal–cubic phase transition temperature, Tc, upon increasing x due to a reduction in the lattice anisotropy. The intensity of ~303 cm−1 E(TO2) mode decreased gradually with temperature and finally disappeared around the tetragonal ferroelectric to cubic paraelectric phase at about 100 ℃ and 40 ℃ for x = 0.1 and 0.3, respectively. A gradual reduction in the band gap Eg of BSTx with x was evident from the analysis of UV-visible absorption spectra. The energy storage density (Udis) of the ferroelectric capacitors for x = 0.7 was ~0.20 J/cm3 with an energy storage efficiency of ~88% at an applied electric field of 104.6 kV/cm. Nearly room temperature transition temperatures TC and reasonably fair energy storage density of the BSTx capacitors were found. [ABSTRACT FROM AUTHOR]

Iron oxide nanoparticles (IONPs) were synthesized via a block copolymer-assisted hydrothermal method and the phase purity and the crystal structure were investigated by X-ray diffraction. The Rietveld analysis of X-ray diffractometer spectra shows the hexagonal phase symmetry of α-Fe2O3. Further, the vibrational study suggests Raman active modes: 2A1g + 5Eg associated with α-Fe2O3, which corroborates the Rietveld analysis and orbital analysis of 2PFe. The superparamagnetic behavior is confirmed by magnetic measurements performed by the physical properties measurement system. The systematic study of the Congo red (CR) interaction with IONPs using a UV-visible spectrophotometer and a liquid chromatography–tandem mass spectrometry system equipped with a triple quadrupole mass analyzer and an electrospray ionization interface shows effective adsorption. In visible light, the Fe2O3 nanoparticles get easily excited and generate electrons and holes. The photogenerated electrons reduce the Fe3+ ions to Fe2+ ions. The Fe2+/H2O2 oxidizes CR by the Fenton mechanism. The strong adsorption ability of prepared nanoparticles towards dyes attributes the potential candidates for wastewater treatment and other catalytic applications. [ABSTRACT FROM AUTHOR]

Vanadium sesquioxide V2O3, a transition metal oxide, is an important metal transition insulator due to its potential applications in novel electronic and memory devices. V2O3 thin films of thickness around 230 nm were grown on Si/SiO2/Ti/Pt substrates at deposition temperature of 723 K in a controlled Ar:O2 atmosphere of 35:2.5 sccm employing Direct Current (DC) magnetron sputtering. X-ray diffraction studies confirmed single phase of the material stabilized in corundum rhombohedral R 3 ¯ C phase. X-ray photoelectron spectroscopic results revealed chemical oxidation states are of V3+ and O2− and have nearly stochiometric elemental compositions in the films. Magnetization studies down to 10 K predicts a canted antiferromagnetic transition around 55 K. Out of 7 expected Raman active modes (2A1g + 5Eg), two A1g Raman active modes at 242 and 500 cm−1 were observed at ambient R 3 ¯ C phase. Temperature dependent Raman spectroscopic studies carried out from 80 to 300 K identified a monoclinic to rhombohedral phase transition at ~143 K. [ABSTRACT FROM AUTHOR]

In this research, the shuttle effect and the low sulfur activation of lithium–sulfur batteries were mitigated by coating the cathode side of Celgard 2400 separators with mixtures of carbon black/chitosan or carbon black/polyvinylidene fluoride using the simple slurry technique. Carbon nanoparticles and the polar groups of the polymers were responsible for boosting the reaction kinetics of sulfur and the chemical and physical trapping of lithium polysulfides. The adsorption of sulfur species in the coated separators was confirmed by the morphologic changes observed in the AFM and SEM images and by the new elements presented in the EDX spectra after 100 charge/discharge cycles. The high intensity of the peaks in the cyclic voltammograms and the long plateaus in the discharge profiles support the improvement in the reaction kinetics. The batteries with the carbon black/chitosan- and carbon black/polyvinylidene fluoride-coated separators reached high specific discharge capacities of 833 and 698 mAhg−1, respectively, after 100 cycles at 0.5 C. This is promising for this kind of technology, and detailed results are presented in the article. [ABSTRACT FROM AUTHOR]

Multiferroic composites with enhanced magneto-electric coefficient are suitable candidates for various multifunctional devices. Here, we chose a particulate composite, which is the combination of multiferroic (PbFe0.5Nb0.5O3, PFN) as matrix and magnetostrictive (Co0.6Zn0.4Fe1.7Mn0.3O4, CZFMO) material as the dispersive phase. The X-ray diffraction analysis confirmed the formation of the composite having both perovskite PFN and magnetostrictive CZFMO phases. The scanning electron micrograph (SEM) showed dispersion of the CZFMO phase in the matrix of the PFN phase. The temperature-dependent magnetization curves suggested the transition arising due to PFN and CZFMO phase. The temperature-dependent dielectric study revealed a second-order ferroelectric to the paraelectric phase transition of the PFN phase in the composite with a small change in the transition temperature as compared to pure PFN. The magnetocapacitance (MC%) and magnetoimpedance (MI%) values (obtained from the magneto-dielectric study at room temperature (RT)) at 10 kHz were found to be 0.18% and 0.17% respectively. The intrinsic magneto-electric coupling value for this composite was calculated to be 0.14 mVcm-1Oe-1, which is comparable to other typical multiferroic composites in bulk form. The composite PFN-CZFMO exhibited a converse magneto-electric effect with a change in remanent magnetization value of -58.34% after electrical poling of the material. The obtained outcomes from the present study may be utilized in the understanding and development of new technologies of this composite for spintronics applications. [ABSTRACT FROM AUTHOR]

A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article. [ABSTRACT FROM AUTHOR]

The compound 0.9[KNbO3]-0.1[(BaNi1/2Nb1/2O3−δ] (KBNNO), a robust eco-friendly (lead-free) ferroelectric perovskite, has diverse applications in electronic and photonic devices. In this work, we report the dielectric, ferroelectric, and structural phase transitions behavior in the KBNNO compound using dielectric, X-ray diffraction, and Raman studies at ambient and as a function of temperature. Analyses of X-ray diffraction (XRD) data at room temperature (rtp) revealed the orthorhombic phase (sp. Gr. Amm2) of the compound with a minor secondary NiO cubic phase (sp. Gr. Fm3m). A direct optical band gap Eg of 1.66 eV was estimated at rtp from the UV–Vis reflectance spectrum analysis. Observation of non-saturated electric polarization loops were attributed to leakage current effects pertaining to oxygen vacancies in the compound. Magnetization studies showed ferromagnetism at room temperature (300 K) in this material. XRD studies on KBNNO at elevated temperatures revealed orthorhombic-to-tetragonal and tetragonal-to-cubic phase transitions at 523 and 713 K, respectively. Temperature-dependent dielectric response, being leaky, did not reveal any phase transition. Electrical conductivity data as a function of temperature obeyed Jonscher power law and satisfied the correlated barrier-hopping model, indicating dominance of the hopping conduction mechanism. Temperature-dependent Raman spectroscopic studies over a wide range of temperature (82–673 K) inferred the rhombohedral-to-orthorhombic and orthorhombic-to-tetragonal phase transitions at ~260, and 533 K, respectively. Several Raman bands were found to disappear, while a few Raman modes such as at 225, 270, 289, and 831 cm−1 exhibited discontinuity across the phase transitions at ~260 and 533 K. [ABSTRACT FROM AUTHOR]

We report the first direct synthesis of graphene on SiO2/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO2/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO2/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy. [ABSTRACT FROM AUTHOR]

We demonstrated the efficient coupling of BiFeO3 (BFO) ferroelectric material within the carbon–sulfur (C-S) composite cathode, where polysulfides are trapped in BFO mesh, reducing the polysulfide shuttle impact, and thus resulting in an improved cyclic performance and an increase in capacity in Li-S batteries. Here, the built-in internal field due to BFO enhances polysulfide trapping. The observation of a difference in the diffusion behavior of polysulfides in BFO-coupled composites suggests more efficient trapping in BFO-modified C-S electrodes compared to pristine C-S composite cathodes. The X-ray diffraction results of BFO–C-S composite cathodes show an orthorhombic structure, while Raman spectra substantiate efficient coupling of BFO in C-S composites, in agreement with SEM images, showing the interconnected network of submicron-size sulfur composites. Two plateaus were observed at 1.75 V and 2.1 V in the charge/discharge characteristics of BFO–C-S composite cathodes. The observed capacity of ~1600 mAh g−1 in a 1.5–2.5 V operating window for BFO30-C10-S60 composite cathodes, and the high cyclic stability substantiate the superior performance of the designed cathode materials due to the efficient reduction in the polysulfide shuttle effect in these composite cathodes. [ABSTRACT FROM AUTHOR]

Development of lead-free BaTiO3/NiFe2O4/BaTiO3 (BTO/NFO/BTO) trilayer structure thin films is significant for the realization of eco-friendly and implantable microelectromechanical systems (MEMS)-based devices. In the present work, we report BTO/NFO/BTO trilayer structure as a representative ferroelectric/ferromagnetic/ferroelectric (FE/FM/FE) system deposited on Pt(111)/TiO2/SiO2/Si using Pulsed Laser Deposition (PLD) technique. We report the ferroelectric, magnetic, and ME properties of BTO/NFO/BTO trilayer nanoscale heterostructure having dimensions 140/80/140 nm, at room temperature. High room temperature dielectric constant ~2145 at 100 Hz with low dielectric loss ~0.05 at 1 MHz is observed. Further, the deposited (BTO/NFO/BTO) tri-layered thin films showed magnetoelectric, multiferroic behavior with remanent polarization of 8.63 μCcm−2 at about 0.25 MV/cm and a reasonably high saturation magnetization of ~16 emu/cm3 at ~10 kOe is witnessed at room temperature. Tri-layered films have shown interesting magnetoelectric (ME) coupling coefficient (αE) ~54.5 mV/cm Oe at room temperature. [ABSTRACT FROM AUTHOR]

Ba0.5Sr0.5TiO3 (BST-0.5) thin films (600 nm) were deposited on single crystal MgO, SrTiO3 (STO), and LaAlO3 (LAO) substrates by pulsed laser deposition at an oxygen partial pressure of 80 mTorr and temperature of 720 °C. X-ray diffraction and in situ reflection high-energy electron diffraction routinely ascertained the epitaxial quality of the (100)-oriented nanocrystalline films. The broadband microwave (1–40 GHz) dielectric properties were measured using coplanar waveguide transmission line test structures. The out-of-plane relative permittivity (ε ⏊ /) exhibited strong substrate-dependent dielectric (relaxation) dispersions with their attendant peaks in loss tangent (tanδ), with the former dropping sharply from tens of thousands to ~1000 by 10 GHz. Although homogeneous in-plane strain (ϵ ǁ) , enhances ε ⏊ / with ε M g O B S T − 0.5 ⏊ / > ε S T O B S T − 0.5 ⏊ / > ε L A O B S T − 0.5 ⏊ /   at lower frequencies, two crossover points at 8.6 GHz and 18 GHz eventually change the trend to: ε S T O B S T − 0.5 ⏊ / > ε L A O B S T − 0.5 ⏊ / > ε M g O B S T − 0.5 ⏊ / . The dispersions are qualitatively interpreted using (a) theoretically calculated (T)− (ϵ ǁ) phase diagram for single crystal and single domain BST-0.5 film, (b) theoretically predicted ϵ ǁ -dependent, ε ⏊ / anomaly that does not account for frequency dependence, and (c) literature reports on intrinsic and extrinsic microstructural effects, including defects-induced inhomogeneous strain and strain gradients. From the Vendik and Zubko model, the defect parameter metric, ξ s , was estimated to be 0.51 at 40 GHz for BST-0.5 film on STO. [ABSTRACT FROM AUTHOR]

Cadmium selenide (CdSe) thin films were deposited on indium tin oxide (ITO) coated glass substrates using pulsed laser deposition (PLD) technique under different growth temperatures. Samples were investigated for their structural, morphological, and optical properties through X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-Vis-NIR spectroscopy. AFM analysis revealed that the surface roughness of the as-grown CdSe thin films increased with the increase in deposition temperature. The optical constants and film thickness were obtained from spectroscopic ellipsometry analysis and are discussed in detail. The optical band gap of the as-grown CdSe thin films, calculated from the Tauc plot analysis, matched with the ellipsometry measurements, with a band gap of ~1.71 eV for a growth temperature range of 150 °C to 400 °C. The CdSe thin films were found to have a refractive index of ~3.0 and extinction coefficient of ~1.0, making it a suitable candidate for photovoltaics. [ABSTRACT FROM AUTHOR]