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In this article, this research demonstrates the influence of in-situ introduction of H2 into the working gas on the physical properties of post-annealed In2O3 thin films and the performance of associated devices. A gradual increase in the H2 ratio leads to improved film quality, as indicated by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscope analyses showing a reduction in defect states such as band-tail states and VO in the film, and a smoother surface morphology with the root mean square roughness approximately 0.446 nm. Furthermore, this hydrogen doping effect results in a distinct shift in the device's threshold voltage toward the positive direction, and an improvement in the field-effect mobility and subthreshold swing. Consequently, a high-performance In2O3:H TFT is developed, exhibiting a field-effect mobility of 47.8 cm2/Vs, threshold voltage of −4.1 V and subthreshold swing of 0.25 V/dec. These findings highlight the potential of in-situ H doping as a promising approach to regulate In2O3-based TFTs. [ABSTRACT FROM AUTHOR]

Suspended graphene film is of great significance for building high-performance electrical devices. However, fabricating large-area suspended graphene film with good mechanical properties is still a challenge, especially for the chemical vapor deposition (CVD)-grown graphene films. In this work, the mechanical properties of suspended CVD-grown graphene film are investigated systematically for the first time. It is found that monolayer graphene film is hard to maintain on circular holes with a diameter of tens of micrometers, which can be improved greatly by increasing the layer of graphene films. The mechanical properties of CVD-grown multilayer graphene films suspended on a circular hole with a diameter of 70 µm can be increased by 20%, and multilayer graphene films prepared by layer-layer stacking process can be increased by up to 400% for the same size. The corresponding mechanism was also discussed in detail, which might pave the way for building high-performance electrical devices based on high-strength suspended graphene film. [ABSTRACT FROM AUTHOR]

Metal-organic frameworks (MOFs) are considered to be the most promising positive anode materials to store charge for electrochromic devices. Nevertheless, a detailed mechanism of the electrochemical and ions storage process has not yet been revealed. Herein, the electrochemical mechanism of the highly porous ZIF-67 films and the electrochromic performance of electrochromic mirrors constructed from ZIF-67 and WO3 electrodes were investigated. The mechanism of the charge storage was revealed in the kinetic analysis of the Li-ion behavior based on the cyclic voltammetry curves and electrochemical impedance spectra. Impressively, the electrochromic mirrors with the self-bleaching effect and self-discharge behavior showed a unique electrochromic performance, such as a high coloration efficiency of 16.47 cm2 C−1 and a maximum reflectance modulation of 30.10% at 650 nm. This work provides a fundamental understanding of MOFs for applications in electrochromic devices and can also promote the exploration of novel electrode materials for high-performance reflective electrochromic devices. [ABSTRACT FROM AUTHOR]