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This paper proposes a Composition Piecewise Memory Polynomial (CPMP) digital predistortion model based on a Vector Switched (VS) behavioral model to address the challenges of severe nonlinearity and strong memory effects in wideband power amplifiers (PAs). To tackle this issue, two thresholds are calculated and used to segment the envelope values of the input signal according to the nonlinear distortion characteristics of the PA. In this approach, a Generalized Memory Polynomial (GMP) model is employed for the lower segment, a Memory Polynomial (MP) model is employed for the middle segment, and a higher-order GMP model is employed for the upper segment. By sharing the fundamental MP among the proposed segmented models and leveraging a design methodology that configures different cross terms, memory depths, and polynomial orders for each segment, this model achieves superior linearization performance while simultaneously reducing the computational complexity associated with model extraction. The experimental results demonstrate that the adjacent channel power ratio (ACPR) of the predistorted PA output signal using the proposed model improves from −36 dBc to −54 dBc, matching the performance of the GMP model. Furthermore, this performance is 0.5 dBc better than the Piecewise Dynamic Deviation Reduction (PDDR) and Decomposed Vector Rotation (DVR) models. Notably, the complexity of the proposed parameter extraction process is 28.8% of the DVR model, 21.79% of the GMP model, and 12.83% of the PDDR model. [ABSTRACT FROM AUTHOR]

In this paper, we present a high power-added efficiency (PAE) and high gain per stage 60 GHz power amplifier (PA). The proposed PA consists of a two-stage common-source amplifier that incorporates neutralization capacitors and compensation inductors to enhance both gain and efficiency. The gain characteristics are analyzed, demonstrating that the proposed design improves both gain and efficiency. Implemented in 65 nm CMOS technology, the PA achieves a saturated output power of 13.4 dBm at 60 GHz, with a maximum PAE of 26.7% from a 1 V supply. The output 1 dB compression point is 10.5 dBm, with a PAE of 16%. The PA occupies a core chip area of 0.094 mm2. [ABSTRACT FROM AUTHOR]

This paper presents a Doherty power amplifier (DPA) integrated circuit (IC) designed to have enhanced gain, efficiency, and AM-AM characteristics through a dynamic power dividing technique, which can control the power dividing ratio according to the input power. Since this multi-purpose dynamic power dividing network also provides the phase offset and impedance matching at the interstage network needed for appropriate DPA operation, the active IC area could be reduced. To verify the proposed technique and its analysis, the DPA was implemented with a 28 nm bulk CMOS process for the fifth-generation (5G) new radio (NR) millimeter-wave frequency band of 23.5–27.5 GHz. The measured results showed a gain of 20.3–21.9 dB, saturated output power of 14.0–15.2 dBm, power added efficiency (PAE) of 22.8–26.7% at the peak power, and PAE of 14.6–17.6% at the 6 dB output power back-off (OBO). [ABSTRACT FROM AUTHOR]

With the demand for the miniaturization and integration of wireless power transfer (WPT) systems, higher frequency is gradually becoming the trend; thus, the power electronic device has become one of the main reasons for limiting the development. Therefore, further research on high-frequency inverters and purposeful design according to the characteristics of WPT systems are of great significance to promote the development of high-frequency WPT technology. There is still no literature that summarizes all the inverter circuits that can be applied to WPT systems, which makes it extremely difficult to find an inverter that meets the designer's requirements. This paper reviews the high-frequency inverters for WPT systems, summarizes the derived topologies based on power amplifiers and H-bridge inverters, investigates the main factors restricting the development of high-frequency inverters, and analyzes the research directions for future development. [ABSTRACT FROM AUTHOR]

This paper presents a comprehensive study on the design and performance of a high-power amplifier (PA) covering a broad frequency band from 0.1 to 4.8 GHz. Leveraging a 10 W GaN device, the amplifier achieves output power levels surpassing 10 W across the entire frequency band. Furthermore, the power-added efficiency (PAE) of the amplifier ranges from 47% to 59%, indicating its energy-efficient operation. With consistent gain characteristics varying between 7 and 15 dB, the design ensures reliable signal amplification for diverse applications. Notably, the approach introduces a simplified output matching network based on an LC network, prioritizing practicality without sacrificing performance. Additionally, comprehensive guidance is provided on utilizing the Smith chart for streamlined amplifier design, enabling engineers with an accessible methodology. Through a meticulous analysis, this work contributes to advancing the field of high-power amplification, offering enhanced performance and usability for next-generation wireless communication systems. [ABSTRACT FROM AUTHOR]

In the rapidly advancing field of 5G technology, efficient thermal management is essential for enhancing the performance and reliability of high-power-density integrated circuits (ICs). This paper introduces an innovative approach to cooling these critical components, significantly surpassing traditional methods. Our design optimizes heatsink and fan configurations through systematic experimentation, varying fin shapes, heatsink dimensions, and fan speeds. The results demonstrate that fan velocity is the most critical factor in reducing IC temperatures, as increased airflow dramatically lowers thermal output. Expanding the heatsink surface area further improves heat dissipation by enhancing airflow interaction, while a larger copper heatsink boosts thermal conduction, effectively reducing the final IC temperature. These optimizations streamline the cooling process, minimizing the need for more complex and expensive equipment. This research sets a new benchmark in thermal management, fostering the development of more efficient and reliable electronic systems in the era of advanced wireless communications. Our approach brings a new dimension to existing research by focusing on the optimization of heatsink and airflow designs specifically for ICs. While previous studies have explored broader thermal management strategies, our work addresses specific challenges in heat dissipation by refining geometric configurations and fan speed adjustments. These optimizations result in measurable improvements in both efficiency and scalability, particularly within the context of high-power 5G systems. [ABSTRACT FROM AUTHOR]

This paper presents a thorough robust Class-AB power amplifier design and its application in pressure-mode sensor-on-chip nonlinearity correction. Considering its use in piezoresistive sensing applications, a gain-boosting-aided folded cascode structure is utilized to increase the amplifier's gain by a large amount as well as enhancing the power rejection ability, and a push–pull structure with miller compensation, a floating gate technique, and an adaptive output driving limiting structures are adopted to achieve high-efficiency current driving capability, high stability, and electronic environmental compatibility. This amplifier is applied in a real sensor nonlinearity correction on-chip system. With the help of a self-designed 7-bit + sign DAC and a self-designed two-stage operational amplifier, this system is compatible with nonlinear correction at different signal conditioning output values. It can also drive resistive sensors as small as 300 ohms and as high as tens of thousands of ohms. The designed two-stage operational amplifier utilizes the TSMC 0.18 um process, resulting in a final circuit power consumption of 0.183 mW. The amplifier exhibits a gain greater than 140 dB, a phase margin of 68°, and a unit gain bandwidth exceeding 199.76 kHz. The output voltage range spans from 0 to 4.6 V. The final simulation results indicate that the nonlinear correction system designed in this paper can correct piezoresistive sensors with a nonlinearity of up to ±2.5% under various PVT (Process–Voltage–Temperature) conditions. After calibration by this system, the maximum error in the output voltage is 4 mV, effectively reducing the nonlinearity to 4% of its original value in the worst-case scenario. [ABSTRACT FROM AUTHOR]

This paper introduces a novel differential combiner designed to effectively address parasitic capacitances of transistors used in power amplifier (PA) designs with precise compensation at a specified frequency. The combiner consists of a λ / 4 transmission line with an integrated capacitor of value 2 C O U T at its midpoint, which ensures accurate cancellation of parasitic effects. This design connects the drain pins of two transistors, which are considered identical in this configuration. By eliminating the need for complex parasitic compensation techniques, this method significantly simplifies the design process of Doherty Power Amplifiers (DPAs). Extensive simulations validate the effectiveness of this approach, highlighting its potential as a versatile and straightforward solution for next-generation communication systems. [ABSTRACT FROM AUTHOR]

This paper outlines a design approach for biomedical wireless power transfer systems with a focus on three-coil inductive links for neonatal intensive care unit applications. The relevant literature has been explored to support the design approach, equations, simulation results, and the process of experimental analysis. The paper begins with a brief overview of various power amplifier classes, followed by an in-depth examination of the most common power amplifiers used in biomedical wireless power transfer systems. Among the traditional linear and switching amplifier classes, class-D and class-E switching amplifiers are highlighted for their enhanced efficiency and straightforward implementation in biomedical contexts. The impact of load variation on these systems is also discussed. This paper then explores the basic concepts and essential equations governing inductive links, comparing two-coil and multi-coil configurations. In the following, the paper discusses foundational coil parameters and provides theoretical and experimental analysis of both two-coil and multi-coil inductive links through step-by-step measurement techniques using lab equipment and addressing the relevant challenges. Finally, a case study for neonatal intensive care unit applications is presented, showcasing a wireless power transfer system operating at 13.56 MHz for powering a wearable device on a patient lying on a mattress. An inductive link with a transmitter coil embedded in a mattress is designed to supply power to a load at distances ranging from 4 cm to 12 cm, simulating the mattress-to-chest distance of an infant. the experimental results of a three-coil inductive link equipped with a Class-E power amplifier are reported, demonstrating power transfer efficiency ranging from 75% to 25% and power delivery to a 500 Ω -load varying from 340 mW to 25 mW over various distances. [ABSTRACT FROM AUTHOR]

The purpose of this paper is to present a detailed design procedure for a highly efficient sequential load-modulated balanced amplifier (SLMBA) to provide an in-depth analysis of this complex power amplifier (PA) architecture. SLMBA's basic theory is presented and discussed. An SLMBA with a frequency range from 2.45 GHz to 2.65 GHz was implemented and then measured in order to validate the proposed design methodology. In both saturation and back-off states, the fabricated SLMBA exhibits extremely high efficiency and output power. It delivers a maximum output power of 43~44.4 dBm and a drain efficiency (DE) of 71.6~75% at saturation, a DE of 63.5~66% at 6 dB output back-off (OBO) state, a DE of 61.8~66% at 10 dB OBO state, and a DE of more than 51% at 12 dB OBO state in the targeted frequency band. The achieved results demonstrate the effectiveness of the proposed design procedure. [ABSTRACT FROM AUTHOR]

This paper presents the theory, design, and application of a dual-branch series-diode analog pre-distortion (APD) linearizer to improve the linearity and efficiency of a K-band high-power amplifier (HPA). A first-of-its-kind, frequency-dependent large-signal APD model is presented. This model is used to evaluate different phase relationships between the linear and nonlinear branches, suggesting independent gain and phase expansion characteristics with this topology. This model is used to assess the impact of diode resistance, capacitance, and ideality factors on the APD characteristics. This feature is showcased with two similar GaAs diodes to find the best fit for the considered HPA. The selected diode is characterized and modeled between 1 and 26.5 GHz. A comprehensive APD design and simulation workflow is reported. Before fabrication, the simulated APD is evaluated with the measured HPA to verify linearity improvements. The APD prototype achieves a large-signal bandwidth of 6 GHz with 3 dB gain expansion and 8° phase rotation. This linearizer is demonstrated with a 17–21 GHz GaN HPA with 41 dBm output power and 35% efficiency. Using a wideband 750 MHz signal, this APD improves the noise–power ratio (NPR) by 6.5–8.2 dB over the whole HPA bandwidth. Next, the HPA output power is swept to compare APD vs. power backoff for the same NPR. APD improves the HPA output power by 1–2 W and efficiency by approximately 5–9% at 19 GHz. This efficiency improvement decreases by only 1–2% when including the APD post-amplifier consumption, thus suggesting overall efficiency and output power improvements with APD at K-band frequencies. [ABSTRACT FROM AUTHOR]

In this study, we explored the potential for average power scaling in a monolithic side-counter-pumped combiner based on Yb-doped tapered fibers. The optimal configuration of the pump-feeding fibers was determined through experiments with passive signal fibers. It is shown that pump coupling efficiencies higher than 83% can be achieved for fibers coated with low-index polymer with a numerical aperture (NA) around 0.45 and more than 74% for fibers with second cladding made of F-doped silica (NA ~ 0.26) for pump power up to 100 W. It was shown that the main factor significantly reducing the pump-to-signal conversion efficiency in the developed monolithic Yb-doped tapered fiber amplifiers is the pump leakage due to the decrease of the first cladding diameter along the tapered fiber and the corresponding increase of the pump NA (which becomes higher than the NA of the first cladding). A solution to this problem based on a narrowing diameter at the output end of the tapered fiber was proposed and realized. The record-high average power of 41 W, with a coupling efficiency of 77.7%, was demonstrated in a monolithic amplifier with a threshold of nonlinear effects of more than 600 kW (for ps pulses). Prospects for further power scaling in all-fiber sub-MW peak power amplifiers are discussed. [ABSTRACT FROM AUTHOR]

Featured Application: For industrial-scale extinguishment, natural processes such as acoustic wave propagation can be used. As proven, a technology described in the article using modulated and unmodulated waves can be applied to extinguish flames, as well as to control them. The results presented in the article are limited to extinguishing candle flames, but in the long term, this technique can be used to extinguish flames (especially firebreaks) from various materials (Classes C and B). This inexpensive, versatile, and environmentally safe method can provide a supporting or additional means of fire protection, especially useful in the first stage of fire occurrence. This technique appears to be environmentally friendly (it does not leave stains and does not emit chemicals). Moreover, acoustic waves can be applied to reduce the intensity of smoke and harmful substances in the ambient air, the presence of which is the result of fires (future plans). Due to the consequences of fires, new and environmentally friendly firefighting techniques are constantly being sought. There are many methods of extinguishing flames around the world. One of them is a technique that uses acoustic waves for extinguishing, which can be seen as repeated sequences of molecular compression and dilation (acoustic waves transfer energy due to the movements of molecules and atoms). This research shows a new approach to the extinguishing of flames. In practice, the extinguishing capabilities of low-frequency modulated and unmodulated acoustic waves were tested on a laboratory station, the main component of which was a high-powered acoustic extinguisher (the nominal power was equal to 1700 W). A B&C 21DS115 woofer was applied as a sound source. A Rigol DG4102 and a Proel HPX2800 were used as an acoustic generator with a modulator and as a power amplifier, respectively. In this paper, the presented results are limited to extinguishing candle flames. The tests made it clear that flames can be extinguished using properly generated and directed acoustic waves. As the results indicate, it becomes possible to effectively extinguish flames with both low-frequency modulated and unmodulated acoustic waves, which brings many benefits. [ABSTRACT FROM AUTHOR]

Protecting sensitive patient data, such as electrocardiogram (ECG) signals, during RF wireless transmission is essential due to the increasing demand for secure telemedicine communications. This paper presents an innovative chaotic-based encryption system designed to enhance the security and integrity of telemedicine data transmission. The proposed system utilizes a multi-scroll chaotic system for ECG signal encryption based on master–slave synchronization. The ECG signal is encrypted by a master system and securely transmitted to a remote location, where it is decrypted by a slave system using an extended state observer. Synchronization between the master and slave is achieved through the Lyapunov criteria, which ensures system stability. The system also supports Orthogonal Frequency Division Multiplexing (OFDM) and adaptive n-quadrature amplitude modulation (n-QAM) schemes to optimize signal discretization. Experimental validations with a custom transceiver scheme confirmed the system's effectiveness in preventing channel overlap during 2.5 GHz transmissions. Additionally, a commercial RF Power Amplifier (RF-PA) for LTE applications and a development board were integrated to monitor transmission quality. The proposed encryption system ensures robust and efficient RF transmission of ECG data, addressing critical challenges in the wireless communication of sensitive medical information. This approach demonstrates the potential for broader applications in modern telemedicine environments, providing a reliable and efficient solution for the secure transmission of healthcare data. [ABSTRACT FROM AUTHOR]

The polarization direction-dependent SBS threshold was investigated, and the terminal polarization control technique was demonstrated to restore the linear polarization state. By increasing the relative angle of the injecting polarization direction from 0° to 90°, the measured SBS threshold increased until reaching a maximum value, beyond which it decreased in a nearly symmetrical trend. The highest SBS threshold was achieved with the relative polarization angle being 45°, delivering a 67% threshold enhancement compared with that at 0°. A quarter-wave-plate was used to restore the polarization state of the output laser manually from an elliptic to a linearly polarized state, and temperature-dependent polarization fluctuation was observed, which intensified as the laser power was scaled. By reducing the cooling temperature, a 1 kW laser with a linearly polarized state was demonstrated using a 45° polarization direction-injected monolithic PM amplifier. [ABSTRACT FROM AUTHOR]

To meet the strong coupling characteristics of the MSCSG deflection channel and the demand for high control accuracy, a two-degree-of-freedom deflection channel model is firstly established for the structure and working principle of the MSCSG; to meet the strong coupling between the two channels, the inverse system method is used to decouple the model; then, the operation principle of the MSCSG system is introduced, and the modeling of the power amplifier is carried out; to meet the demand for high-precision control of the MSCSG rotor system, the RBF neural network is improved using the fuzzy method to achieve high-precision estimation of the residual coupling terms and deterministic disturbances, and the adaptive sliding mode controller is designed. For the high-precision control of the MSCSG rotor system, the fuzzy method is used to improve the RBF neural network to realize the high-precision estimation of the residual coupling term and uncertain perturbation, and the adaptive sliding mode controller is designed, and the convergence of the controller is proved on the basis of the Lyapunov stability criterion. Simulation analysis shows that the method has a large improvement in decoupling performance and anti-disturbance performance compared with the traditional method, and finally, the experiment verifies the effectiveness of the present method and achieves the optimization of the deflection channel controller. The method can be extended to other magnetic levitation actuators and related fields. [ABSTRACT FROM AUTHOR]

In order to solve the performance prediction and design optimization of power amplifiers (PAs), the performance parameters of Gallium Nitride high-electron-mobility transistor (GaN HEMT) PAs at different temperatures are modeled based on the particle swarm optimization–extreme learning machine (PSO-ELM) and extreme learning machine (ELM) in this paper. Then, it can be seen that the prediction accuracy of the PSO-ELM model is superior to that of ELM with a minimum mean square error (MSE) of 0.0006, which indicates the PSO-ELM model has a stronger generalization ability when dealing with the nonlinear relationship between temperature and PA performance. Therefore, this investigation can provide vital theoretical support for the performance optimization of PA design. [ABSTRACT FROM AUTHOR]

For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to ON-state conditions. The stability of the device threshold voltage (Vt) condition is imperative from a circuit-design perspective and is the focus of this study, where stresses in both the ON and OFF states are explored. We see rapid positive threshold voltage increases under negative bias stress and subsequent recovery (i.e., Vt reduces), whereas conversely, we see a negative Vt shift under positive stress and Vt increase during the subsequent relaxation phase. These effects are correlated with the thickness of the GaN layer and ultimately result from the deep carbon-acceptor levels in the C-GaN back barrier incorporated to screen the buffer between the silicon substrate and the epitaxially grown GaN layer. Methods to mitigate this effect are explored, and the consequences are discussed. [ABSTRACT FROM AUTHOR]

In this paper, a GaN high-electron-mobility transistor (HEMT) compact high-power wide-band power amplifier with an operation frequency from 0.8 GHz to 2 GHz is proposed. In order to realize a compact design, an internally matched method is employed. A wide-band matching strategy with an LC network and a multi-stage wide-band power combiner/divider is introduced in this design to achieve a wide bandwidth. A power combination structure is applied to have high output power. Wire-spiral inductance and film capacitors are employed to construct the compact matching network. The equivalent inductance of the bonding wire is also involved in the matching network. Experimental results show that the PAE (power-added efficiency) during the whole operation's bandwidth (0.8 GHz to 2.0 GHz) is from 40% to 57%. The output power can reach from 48.3 dBm to 49.8 dBm with a circuit size of 30.8 × 27.4 mm 2 . [ABSTRACT FROM AUTHOR]

A millimeter-wave (mmWave) gallium nitride (GaN) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) was implemented, considering a source via effect. In this paper, we introduce guidelines for designing GaN HPA MMICs, from device sizing to meeting high-power specifications, power matching considering source via effects, schematic design of three-stage amplifier structures, and electromagnetic (EM) simulation. Based on the results of load pull simulation and small-signal maximum stable gain (MSG) simulation, the GaN high-electron-mobility transistor (HEMT) size was selected to be 8 × 70 μm. However, since the source via model provided by the foundry was significantly different from the EM results, it was necessary to readjust the power matching considering this. Additionally, when selecting the source via size, the larger the size, the easier the matching, but since the layout of the peripheral bias circuit is not possible, a compromise was required considering the actual layout. To prevent in-band oscillation, an RC parallel circuit was added to the input matching circuit, and low-frequency oscillation was solved by adding a gate resistor on the PCB module. The proposed PA was fabricated with a commercial 0.1 μm GaN HEMT MMIC process. It exhibited 38.56 to 39.71 dBm output power (Pout), 14.2 to 16.7 dB linear gain, and 14.1% to 18.2% power-added efficiency (PAE) in the upper Ka band. The fabricated GaN power amplifier MMIC shows competitive Pout in the upper Ka band above 33 GHz. [ABSTRACT FROM AUTHOR]

This paper proposes the ultra−generalized continuous class F (UCCF) mode, which combines the influences of the drain current conduction angle and overdriven transistor on the drain current waveform to achieve a broader finite third-harmonic load impedance space. The UCCF mode uses α to describe the magnitude of the drain current conduction angle and p c r to describe the drain current peak-clipped ratio. An analysis of the effects of p c r and α on the linearity and efficiency of the UCCF model is presented, establishing a robust theoretical foundation for achieving a balance between these two characteristics. Additionally, an examination of how p c r and α influence the load impedance design space is conducted, demonstrating that the UCCF mode not only offers a broader finite third-harmonic load impedance space but also expands the fundamental and second-harmonic load impedance design space. For practical validation, a PA with frequency of 2.05–2.65 GHz is designed based on CGH40010F. The test results show that S 11 is less than −15 dB, the drain efficiency is 67.0–73.2%, and the output power is 40.1–41.0 dBm. The linearity is tested using a 5G NR (New Radio) signal with a bandwidth of 100 MHz and a peak-to-average power ratio of 8 dB at 2.35 GHz. The worst adjacent channel power ratio (ACPR) is −34.8 dBc without digital predistortion (DPD), and −57.8 dBc with DPD. An average output power ( P a v e ) of around 32.4 dBm and an average DE ( D E a v e ) of 34.39% were obtained. [ABSTRACT FROM AUTHOR]

The feasibility of implementing digital predistortion for next-generation wireless communication is faced with a dilemma due to the ever-increasing demand for faster data rates. This causes the utilized bandwidth to increase significantly, as seen in the 5G NR standard in which bandwidths as high as 400 MHz are utilized. Hence, the development of new predistortion techniques in which the forward and feedback paths operate at lower sampling rates is of utmost importance to realize efficient and practical predistortion solutions. In this work, a novel predistortion technique is presented by which the predistortion is divided between the digital and analog domains. The predistorter is composed of a memoryless AM/AM gain function that is implementable in the analog domain, and a nonlinear model with memory effects in the digital domain to relax the sampling rate requirements on both the forward and feedback paths. Experimental validation was carried out with a 20 MHz and a 40 MHz 5G signal, and the results indicate minimal linearization degradation with a sampling rate reduction of 50% and 30%, respectively. This sampling rate reduction is concurrently applied in the digital-to-analog converter of the forward path and the analog-to-digital converter of the feedback path. [ABSTRACT FROM AUTHOR]

High-average-power narrow-linewidth tunable solid-state lasers in the wavelength region between 2 and 3 μm are attractive light sources for many applications. This paper reports a narrow-linewidth widely tunable laser system based on the polycrystalline Cr2+:ZnSe elements pumped by repetitively pulsed 2.1 µm Ho3+:YAG laser operating at a pulse rate of tens of kilohertz. An advanced procedure of ZnSe element doping and surface improvement was applied to increase the laser-induced damage threshold, which resulted in an increase in the output power of the Cr2+:ZnSe laser system. The high-average-power laser system comprised double master oscillators and power amplifiers: Ho3+:YAG and Cr2+:ZnSe laser oscillators, and Ho3+:YAG and Cr2+:ZnSe power amplifiers. The output wavelength was widely tuned within 2.3–2.7 µm by means of an acousto-optical tunable filter inside a Cr2+:ZnSe master oscillator cavity. The narrow-linewidth operation at the pulse repetition rate of 20–40 kHz in a high-quality beam with an average output power of up to 9.7 W was demonstrated. [ABSTRACT FROM AUTHOR]

In this study, a broadband linearizer design method based on an extended design space is proposed to optimize the design complexity and linearization performance of conventional linearizers for broadband operation. The gain characteristics of the power amplifier (PA) and linearizer are fitted to simplify the analyses and to quickly derive the ideal objective function of the linearizer design. Then, the 1 dB compression point of a nonlinear system is redefined and used to further extend the design space of the linearizer. To verify the proposed design method, a millimeter-wave linearizer prototype based on the extended design space was designed and fabricated. The linearizer was tested with continuous-wave and 100 MHz two-tone signals from 40 GHz to 43 GHz. The measurement results of the linearized PA showed that the output 1 dB power point ( O P 1 d B ) was improved by more than 1.7 dB, the phase error was reduced by more than 15 ° , and the third-order intermodulation distortion (IMD3) was suppressed by 8.6 dB–13.1 dB over the working frequencies. The proposed linearizer achieved good linearization performance, low power consumption, and simple design implementation, and it was not necessary to tune the bias during broadband operation, making it applicable in complex communication scenarios. [ABSTRACT FROM AUTHOR]

This article presents a new broadband three-way series Doherty power amplifier (DPA) topology, which enables a broadband output power back-off (OBO) efficiency enhancement of up to 10 dB or higher. The proposed DPA topology achieves Doherty load modulation and three-way power combining through a transformer, which requires only a low coupling factor, thus facilitating its implementation in double-sided PCBs or monolithic microwave integrated circuit (MMIC) processes. The design equations for the proposed DPA topology are proposed and analyzed in detail. A proof-of-concept PA at the 2.1–2.8 GHz band using commercial GaN transistors was designed and fabricated to validate the proposed concept. Within the operating frequency band, it achieves a saturated output power ( P sat ) of 44.5–46.5 dBm with a peak drain efficiency (DE) of 60–72%, and 43–52% DE at 10 dB OBO. Moreover, under a 20 MHz long-term evolution (LTE)-modulated signal, the PA demonstrates a 36.8–37.5 dBm average output power ( P avg ) and 47–53% average drain efficiency ( DE avg ). Notably, the adjacent channel leakage ratio (ACLR) is as low as −35–−28.2 dBc without any digital predistortion (DPD). [ABSTRACT FROM AUTHOR]

A broadband Doherty power amplifier (DPA) always experiences an efficiency degradation between two efficiency peaks, especially at two side bands. In this study, the efficiency degradation was demonstrated to be caused caused by the in-phase power combining at the saturation power level. To solve this problem, current misalignment was introduced into the broadband DPA design. The carrier and peaking PA have different current phases when performing the power combination at the saturation power level. In this work, it was also demonstrated that the efficiency in the high-power region of a DPA can be improved by elaborately using misaligned current phases. A detailed analysis and the design procedure of a broadband DPA are presented in this paper. And a 1.5–2.45 GHz broadband DPA was implemented and measured. The fabricated DPA achieves a saturation output power of 42.7–44.9 dBm, a saturation drain efficiency (DE) of 62.7–74.1% and a gain of 10.2–13.9 dB over 1.5–2.45 GHz. Moreover, the fabricated DPA also achieves a 6 dB back-off DE of more than 49.1% in the frequency band of interest. [ABSTRACT FROM AUTHOR]

In this study, we designed a wideband CMOS power amplifier to support multi-band and multi-standard wireless communications. First, an input matching technique through LC network and a wideband design technique using a low Q-factor transformer were proposed. In addition, a design technique was proposed to improve output matching using RC feedback. To verify the feasibility of the proposed design methodology for wideband CMOS power amplifiers, the designed power amplifier was fabricated using a 180 nm RFCMOS process. The size including all of the matching network and test pads was 1.38 × 0.90 mm2. In addition, the effectiveness of the proposed power amplifier was verified through the measured results using modulated signals of WCDMA, LTE, and 802.11n WLAN. [ABSTRACT FROM AUTHOR]

Next-generation wireless systems require increased spectral and energy efficiency in terminals. This can only be achieved if the nonlinear characteristics of the radio front-end, primarily the power amplifier (PA), are known and considered while designing algorithms or optimizing radio links. PA datasheets contain limited information, and wideband PA measurements typically require advanced equipment and software. This paper proposes a measurement and signal processing framework that enables the acquisition of nonlinear PA characteristics using generic complex sample transmitters and receivers, e.g., software-defined radio (SDR). This paper also proposes a multistage signal calibration and synchronization procedure that allows obtaining nonlinear PA characteristics that are non-distorted by other phenomena. The correctness and usefulness of the proposed framework are demonstrated by measuring three PAs, each under varying supply voltage and carrier frequency. At the same time, the high variability of the obtained nonlinear characteristic justifies the need for PA measurements to obtain awareness of nonlinear characteristics. [ABSTRACT FROM AUTHOR]

In this paper, a novel wideband power amplifier (PA) operating in the 2–6 GHz frequency range is presented. The proposed PA design utilizes a combination technique consisting of a distributed equalization technique, multiplexing the power supply network and matching network technique, an LR dissipative structure, and an RC stability network technique to achieve significant bandwidth while maintaining superior gain flatness, high efficiency, high gain, and compact size. For verification, a three-stage PA using the combination technique is designed and implemented in a 0.25 μm GaN high-electron-mobility transistor (HEMT) process. The fabricated prototype demonstrates a saturated output power of 4 W, a power gain of 21 dB, a gain flatness of ±0.6 dB, a power-added efficiency of 39–46%, and a fractional bandwidth of 100% under the operating conditions of drain voltage 28 V (continuous wave) and gate voltage −2.6 V. Moreover, the chip occupies a compact size of only 2.51 mm × 1.97 mm. [ABSTRACT FROM AUTHOR]

The practical implementation of massive multi-user multi-input–multi-output (MU-MIMO) downlink communication systems power amplifiers that are energy efficient; otherwise, the power consumption of the base station (BS) will be prohibitive. Constant envelope (CE) precoding is gaining increasing interest for its capability to utilize low-cost, high-efficiency nonlinear radio frequency amplifiers. Our work focuses on the topic of CE precoding in massive MU-MIMO systems and presents an efficient CE precoding algorithm. This algorithm uses an alternating minimization (AltMin) framework to optimize the CE precoded signal and precoding factor, aiming to minimize the difference between the received signal and the transmit symbol. For the optimization of the CE precoded signal, we provide a powerful approach that integrates the majorization-minimization (MM) method and the fast iterative shrinkage-thresholding (FISTA) method. This algorithm combines the characteristics of the massive MU-MIMO channel with the second-order Taylor expansion to construct the surrogate function in the MM method, in which minimizing this surrogate function is the worst-case of the system. Specifically, we expand the suggested CE precoding algorithm to involve the discrete constant envelope (DCE) precoding case. In addition, we thoroughly examine the exact property, convergence, and computational complexity of the proposed algorithm. Simulation results demonstrate that the proposed CE precoding algorithm can achievean uncoded biterror rate (BER) performance gain of roughly 1 dB compared to the existing CE precoding algorithm and has an acceptable computational complexity. This performance advantage also exists when it comes to DCE precoding. [ABSTRACT FROM AUTHOR]

In this paper, we develop a kW-level high-repetition-rate nanosecond master oscillator power amplifier (MOPA) laser system, employing a structure of fiber, Nd:YVO4, and Nd:YAG hybrid amplification. A tunable fiber seed source is used for adjustable pulse repetition frequency and pulse width. The Nd:YVO4 pre-amplifier, which is dual-end-pumped, achieves high gain while maintaining good beam quality, and the high-power side-pumped Nd:YAG slab main-amplifier enables efficient power amplification. The repetition rate of the output laser can be adjusted within the range of 1~20 kHz, and the pulse width can be tuned within the range of 10~300 ns. The seed output is 6 mW at a repetition frequency of 20 kHz; we achieve an average output power of 1240 W with a total power extraction efficiency of 39.1% and single-pulse energy of 62 mJ at a pulse width of 301 ns. This parameter-controllable high-power laser holds promise for applications in the laser cleaning of complex surface contaminants. [ABSTRACT FROM AUTHOR]

A nonlinear capacitance compensation technique is presented in this paper to enhance the linearity of a power amplifier (PA) in the GaN process. The method involves placing an MSM varactor device alongside the GaN HEMT device, which works as the amplifying unit such that the overall capacitance observed at the amplifier input is constant, thus improving linearity. This approach is a reliable and straightforward way to improve PA linearity in the GaN process. The proof-of-concept prototype in this study involves the fabrication of a PA device using a standard GaN HEMT process, which successfully integrates the proposed compensation technique and demonstrates excellent compatibility with existing processes. The prototype has a saturation output power of 18 dBm, a peak power-added efficiency of 51.8%, and a small signal gain of 15.5 dB at 1 GHz. The measured AM–PM distortion at the 5 dB compression point is reduced by more than 50% compared to that of an uncompensated device. Furthermore, the results of third-order intermodulation distortion demonstrate the effectiveness of the linearity enhancement concept, with values improved by more than 5 dB in the linear region compared to those of the uncompensated device. All of the results demonstrate the potential utility of this design approach for wireless communication applications. [ABSTRACT FROM AUTHOR]

This paper presents an ultra-wideband transformer feedback (TFB) monolithic microwave integrated circuit (MMIC) power amplifier (PA) developed using a 0.25 μm gallium nitride (GaN) process. To broaden the bandwidth, a drain-to-gate TFB technique is employed in this PA design, achieving a 117% relative −3 dB bandwidth, extending from 5.4 GHz to 20.3 GHz. At a 28 V supply, the designed PA circuit achieves an output power of 25.5 dBm and a 14 dB small-signal gain in the frequency range of 6 to 19 GHz. Within the 6 to 19 GHz frequency range, the small-signal gain exhibits a flatness of less than 0.78 dB. The PA chip occupies an area of 1.571 mm2. This work is the first to design a power amplifier with on-chip transformer feedback in a compound semiconductor MMIC process, and it enables the use of the widest bandwidth power amplifier on-chip transformer matching network. [ABSTRACT FROM AUTHOR]

The simulation of the steady state and the non-linear stability of a load modulated power amplifier (LMPA) driven by a random modulated generator, fully performed in the frequency domain by harmonic balance (HB) techniques, is presented. The non-linear microwave circuit and the driving pseudo-random modulated (PRM) generator are integrally defined in the frequency domain. The simulation is implemented and performed using commercially available circuit simulation software. The demodulation of the output signal of the LMPA is implemented with optimally matched filters as software-defined demodulation. The simulated dynamic results of a Quasi-MMIC GaN Doherty power amplifier (DPA) are shown and compared to the measured results with a 16-QAM driving signal at 10 MS/s. The time-domain measurement allows the validation of the new simulation technique through the comparison of both the measured and the simulated error vector magnitude (EVM), the left and right adjacent channel power ratios (ACPRs) versus the average output power. This new simulation is then called pseudo-random modulated harmonic balance (PRM-HB) simulation. The full PRM-HB simulation of an LMPA driven by a random modulated signal, performed in the frequency domain at the design circuit level, results in an advanced simulation tool in the frame of the design of RF circuits and subsystems for telecommunication applications. [ABSTRACT FROM AUTHOR]

This paper presents a highly efficient 5G New-Radio (NR) RF power amplifier module (PAM). The n77 PAM consists of a high-voltage differential-topology 2 μm GaAs HBT power amplifier, a CMOS controller, a silicon-on-insulator (SOI) switch, an integrated passive device (IPD) bandpass filter, a low-noise amplifier (LNA), and a bi-directional coupler. This PAM generates a saturation output power of 32.7 dBm including the loss of the SOI switch and output filter. The designed n77 PAM is tested with a commercial envelope tracker IC (ET-IC). The designed PAM with an ET-IC achieves an ACLR of −37 dBc at a 27 dBm output power with a DFT-s-OFDM QPSK 100 MHz NR signal and saves a dc power consumption of 950 mW compared to the APT mode. For the CP-OFDM 256QAM with the most stringent EVM requirements, it achieves an EVM of 1.22% at 23 dBm and saves 640 mW compared to the APT mode. [ABSTRACT FROM AUTHOR]

This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios. [ABSTRACT FROM AUTHOR]

Dual-frequency ultrasounds have demonstrated significant potential in augmenting thermal ablation efficiency for tumor treatment. Ensuring proper impedance matching between the dual-frequency transducer and the power amplifier system is imperative for equipment safety. This paper introduces a novel dual-frequency impedance matching network utilizing L-shaped topology and employing a genetic algorithm to compute component values. Implementation involved an adjustable capacitor and inductor network to achieve dual-frequency matching. Subsequently, the acoustic parameters of the dual-frequency HIFU transducer were evaluated before and after matching, and the effects of ultrasound thermal ablation with and without matching were compared. The proposed dual-frequency impedance matching system effectively reduced the standing wave ratio at the two resonance points while enhancing transmission efficiency. Thermal ablation experiments with matching circuits showed improved temperature rise efficiencies at both frequencies, resulting in an expanded ablation zone. The dual-frequency impedance matching method significantly enhances the transmission efficiency of the dual-frequency ultrasound system at two operational frequencies, thereby ensuring equipment safety. It holds promising prospects for application in dual-frequency ultrasound treatment. [ABSTRACT FROM AUTHOR]

Future 6G networks are expected to utilize Massive Multiple-Input Multiple-Output (M-MIMO) and follow a user-centric cell-free (UCCF) architecture. In a UCCF M-MIMO network, the user can be potentially served by multiple surrounding Radio Units (RUs) and Distributed Units (DUs) controlled and coordinated by a single virtualized Centralized Unit (CU). Moreover, in an M-MIMO network, each transmit frontend is equipped with a Power Amplifier (PA), typically with nonlinear characteristics, that can have a significant impact on the throughput achieved by network users. This work evaluates a UCCF M-MIMO network within an advanced system-level simulator considering multicarrier transmission, using Orthogonal Frequency-Division Multiplexing (OFDM), realistic signal-processing steps, e.g., per resource block scheduling, and a nonlinear radio frontend. Moreover, both idealistic independent and identically distributed (i.i.d.) Rayleigh and 3D ray-tracing-based radio channels are evaluated. The results show that under the realistic radio channel, the novel user-centric network architecture can lead to an almost uniform distribution of user throughput and improve the rate of the users characterized by the worst radio conditions by over 3 times in comparison to a classical, network-centric design. At the same time, the nonlinear characteristics of the PA can cause significant degradation of the UCCF M-MIMO network's performance when operating close to its saturation power. [ABSTRACT FROM AUTHOR]

The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output power and linearity. In addition, the design of an internal complementary metal-oxide semiconductor (CMOS) PA is typically required when considering commercial applications to include the operation of an optional external PA. This paper presents a dual-mode CMOS PA with an external PA driver for NB-IoT applications. The proposed PA supports an external PA mode without degrading the performances of output power, linearity, and stability. In the operation of an external PA mode, the PA provides a sufficient gain to drive an external PA. A parallel-combined transistor method is adopted for a dual-mode operation and a third-order intermodulation distortion (IMD3) cancellation. The proposed CMOS PA with an external PA driver was implemented using 40 nm-CMOS technology. The PA achieves a gain of 20.4 dB, a saturated output power of 28.8 dBm, and a power-added efficiency (PAE) of 57.8% in high-power (HP) mode at 920 MHz. With an NB-IoT signal (200 kHz π/4-differential quadrature phase shift keying (DQPSK)), the proposed PA achieves 24.2 dBm output power (Pout) with a 31.0% PAE, while satisfying −45 dBc adjacent channel leakage ratio (ACLR). More than 80% of the current consumption at 12 dBm Pout could be saved compared to that in HP mode when the proposed PA operates in low-power (LP) mode. The implemented dual-mode CMOS PA provides high linear output power with high efficiency, while supporting an external PA mode. The proposed PA is a good candidate for NB-IoT applications. [ABSTRACT FROM AUTHOR]

A power amplifier (PA) stands as a central module within the electronic information system (EIS), and any variation in a PA's specifications has a direct impact on the EIS's performance, especially in the face of temperature fluctuations. In examining the influence of PA specification changes on the EIS, we employed support vector machine (SVM) to model the behavior of the temperature characteristics of 0.3–1.1 GHz complementary metal oxide semiconductor (CMOS) class-A broadband PAs. The results show that the parameters of S11, S12, S21, and S22 can be effectively modeled. SVM outperforms Elman and GRNN in terms of combined modeling time and modeling accuracy. This research can be extended to modeling the behavior of other types of power amplifiers or devices and circuits. [ABSTRACT FROM AUTHOR]

This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. The transceiver front-end achieves overall bandwidth expansion as well as the flat noise in receive mode using the bandwidth expansion technique. The results show that the front-end modules (FEM) have a typical gain of 22 dB in transmit mode, 18 dB in receive mode, and 2 dB noise in the 4.5–8 GHz band, with a chip area of 1.56 × 1.46 mm2. Based on the available literature, it is known that the proposed circuit is the most highly integrated C-band RF transceiver front-end design for UWB applications in the same process. [ABSTRACT FROM AUTHOR]

Similar to a Doherty power amplifier (DPA), a sequential power amplifier (SPA) is mainly composed of a main amplifier, an auxiliary amplifier and a combiner. However, SPA breaks the bandwidth limitation of the impedance inverter in the DPA, and also simplifies the design procedure. Since the main amplifier has no load modulation, it is easy for the SPA to realize broadband operation and improve the output back-off (OBO) power range. Therefore, SPA has great advantages and potential in expanding bandwidth, improving drain efficiency and expanding the back-off range of a power amplifier simultaneously. This paper describes the evolution and classification of the SPA. First, the basic theory of the SPA is reviewed. Then, some two-way SPAs using coupler and circulator as a power combiner are discussed. Thirdly, the latest popular sequential load modulated balanced amplifier is overviewed. [ABSTRACT FROM AUTHOR]

Outphasing power amplifiers (OPAs) can be used in wireless information and power transfer systems due to their excellent conversion efficiency. With the rapid advancement of technology, there is a strong demand for OPAs to achieve wideband and multi-band operations to enhance frequency coverage. This paper provides a comprehensive review of the research progress on the development of broadband and multi-band board-level OPAs. Firstly, the paper introduces the fundamental components of an OPA. Then, the paper delves into a detailed analysis of the load modulation of OPAs. Subsequently, previous works on the circuit topology and design methods for broadband and multi-band OPAs are discussed and compared. The paper highlights various design strategies and their respective advantages and disadvantages. Finally, the paper explores some potential design methods for broadband and multi-band OPAs, discussing emerging technologies and highlighting potential research directions. [ABSTRACT FROM AUTHOR]

We report on a 1064 nm master oscillator power amplifier (MOPA) system based on pulse-modulated laser diode seed sources combined with fiber preamplifiers and a Yb-doped tapered double-clad fiber (T-DCF) amplifier used as an all-fiber master oscillator and a two-stage side-pumped solid-state power amplifier. The combination of two master oscillators and a single power amplifier allowed us to obtain pulses with a duration ranging from 10 ns to 10 μs with energy up to 137 mJ at 100 Hz. For the first time, we demonstrate a widely tunable pulse duration and a solid-state MOPA system with over 100 mJ energy based on a T-DCF fiber seed laser. [ABSTRACT FROM AUTHOR]

The proliferation of radar technology has given rise to a growing demand for advanced, high-performance transmitter front-ends operating in the 24 GHz frequency band. This paper presents a design analysis of a radio frequency (RF) transmitter (TX) front-end operated at a 24 GHz frequency and designed using 65 nm complementary metal-oxide-semiconductor (CMOS) technology for radar applications. The proposed TX front-end design includes the integration of an up-conversion mixer and power amplifier (PA). The up-conversion mixer is a Gilbert cell-based design that translates the 2.4 GHz intermediate frequency (IF) signal and 21.6 GHz local oscillator (LO) signal to the 24 GHz RF output signal. The mixer is designed with a novel technique that includes a duplex transconductance path (DTP) for enhancing the mixer's linearity. The DTP of the mixer includes a primary transconductance path (PTP) and a secondary transconductance path (STP). The PTP incorporates a common source (CS) amplifier, while the STP incorporates an improved cross-quad transconductor (ICQT). The integrated PA in the TX front-end is a class AB tunable two-stage PA that can be tuned with the help of varactors as a synchronous mode to increase the PA bandwidth or stagger mode to obtain a high gain. The PA is tuned to 24 GHz as a synchronous mode PA for the TX front-end operation. The proposed TX front-end showed an excellent output power of 11.7 dBm and dissipated 7.5 mW from a 1.2 V supply. In addition, the TX front-end achieved a power-added efficiency (PAE) of 47% and 1 dB compression point (OP1dB) of 10.5 dBm. In this case, the output power is 10.5 dBm higher than the linear portion of the response. The methodologies presented herein have the potential to advance the state of the art in 24 GHz radar technology, fostering innovations in fields such as autonomous vehicles, industrial automation, and remote sensing. [ABSTRACT FROM AUTHOR]

The main characteristics of high-efficiency switching-mode solid-state power amplifiers with envelope elimination and restoration (EER) methods depend on all their elements. In this article, we study the influence of the types and parameters of the envelope path low-pass filters (LPFs) on the EER transmitter out-of-band emissions. This article presents for the first time an analysis of EER transmitter operation where the output impedance of the PWM modulator is not equal to zero, as usual (with a one-sided loaded LPF), but is matched with the low-pass filter and the load (with a double-sided loaded LPF). Theoretical comparisons of EER transmitters' out-of-band emissions were carried out with four envelope path LPF configurations (one-sided and double-sided loaded LPFs with a smooth and sharp transition, respectively), for both the nominal load (broadband antenna) and resonant antennas with a limited bandwidth. The analysis showed that for the case of transmitter operation on a resonant antenna with a limited bandwidth, the preferable option was the use of a sixth-order double-sided loaded LPF with a smooth transition. The use of the proposed modulator configuration allowed the transmitter to operate on an antenna with VSWR = 1.07 at the edges of the transmitted signal band with a minimum LPF bandwidth equal to 5.8 bands of the amplified signal. This could significantly expand its application capabilities and allow one to reduce the PWM clock frequency and increase efficiency. [ABSTRACT FROM AUTHOR]

Typical radial active magnetic bearings are structurally symmetric. For example, an eight-pole bearing uses two opposing pairs to control one axis by winding the pair in series. The magnetic force produced by an active magnetic bearing is quadratically proportional to coil currents and inversely proportional to the square of the gap between the bearing and the journal. Bias linearization is widely used to linearize the relationship of coil currents to the magnetic force. However, the bias currents increase ohmic losses and require a larger than necessary capacity of power amplifiers to supply the sum of bias and control currents. Unbiased control of symmetric bearings has the critical issue of slew-rate limiting. Unbiased control of unsymmetrical bearings can eliminate the need for bias currents while avoiding slew-rate singularity except in extreme cases. Although a generalized inversion of the force–current relationship of unbiased unsymmetrical bearings has been proposed previously, no experimental validation is reported. The main objective of this research is to implement the unbiased control strategy and show that exactly the same linear control strategy for eight-pole symmetric bearings can be applied to nine-pole unsymmetrical bearings on industry-scale compressor test rigs. Two test rigs are built: one with eight-pole symmetric bearings and another with nine-pole unsymmetrical bearings. Linear control algorithms are designed and applied. Both control algorithms are linear and consist of lead filters and notch filters. The test results show that the linear control design used for unsymmetrical bearings can achieve the same level of stability that the symmetric bearings provide, satisfying the sensitivity criterion specified by ISO 14839-3. [ABSTRACT FROM AUTHOR]

This study presents a systematic design of an optimized drive signal control system for 2.5 GHz Doherty power amplifiers (DPAs). The designed system enables the analysis of the independent control of the amplitude and phase for the signals between the main and peak amplifiers of the DPA. The independent control of the signal is achieved by incorporating a variable attenuator (VA) and a variable phase shifter (VPS) in each of the two parallel paths of the DPA. This integration allows for driving varying power levels with an arbitrary phase difference between the individual parallel PAs for reduced control complexity and power consumption. The specific VA (Qorvo QPC6614) and VPS (Qorvo QPC2108) components are used for the test system to provide an amplitude attenuation range from 0.5 dB to 31.5 dB and a phase range from 0 ∘ to 360 ∘ at the intended operating frequency of 2.5 GHz, offering the benefit of characterizing the behavior of PAs for an extensive range of drive signals to optimize the output performance, such as PAE or the ACLR. For experimental validation, the designed drive signal control system is integrated with GaN PAs (Qorvo QPD0005—DUT) with a P 1 d B of 37.7 dBm. Each PA is preceded by a drive amplifier with a gain of 17.8 dB to boost the power fed into the PA. In this manuscript, we analyzed and compared the PAE of the DPA and parallel-connected PA for diverse input signals generated using a designed optimized control system. [ABSTRACT FROM AUTHOR]

This article reports a two-stage differential structure power amplifier based on a 130 nm SiGe process operating at 77 GHz. By introducing a tunable capacitor for amplitude and phase balance at the center tap of the secondary coil of the traditional Marchand balun, the balun achieves amplitude imbalance less than 0.5 dB and phase imbalance less than 1 degree within the operating frequency range of 70–85 GHz, which enables the power amplifier to exhibit comparable output power over a wide operating frequency band. The power amplifier, based on a designed 3-bit digital analog convertor (DAC)-controlled base bias current source, exhibits small signal gain fluctuation of less than 5 dB and saturation output power fluctuation of less than 2 dB near the 80 GHz frequency point when the ambient temperature varies in the range of −40 °C to 125 °C. Benefiting from the aforementioned design, the tested single-path differential power amplifier exhibits a small signal gain exceeding 16 dB, a saturation output power exceeding 18 dBm, and a peak saturation output power of 19.1 dBm in the frequency band of 70–85 GHz. [ABSTRACT FROM AUTHOR]

This research presents a comparative analysis of design parameters in modern power amplifier (PA) architecture trends in various CMOS nano-meter technologies. The design parameters include the signal gain, linearity, output power, and output power back-off. The resultant parameters are compared using a table, and various parameters of various designs are visually shown for comparison. These comparative findings will provide any designer with practical information to choose the best CMOS PA design for a specific application. The most important RF CMOS PA integrated implementations are addressed in the conclusion section. [ABSTRACT FROM AUTHOR]