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Numerous studies have reported the possibility of enhancing the properties of materials by incorporating foreign elements within their crystal lattice. In this context, while magnetite has widely known properties that have been used for various biomedical applications, the introduction of other metals within its structure could prospectively enhance its effectiveness. Specifically, zinc and cerium have demonstrated their biomedical potential through significant antioxidant, anticancer, and antimicrobial features. Therefore, the aim of the present study was to develop a series of zinc and/or cerium-substituted magnetite nanoparticles that could further be used in the medical sector. The nanostructures were synthesized through the co-precipitation method and their morpho-structural characteristics were evaluated through X-ray diffraction (XRD), inductively coupled plasma mass spectrometry (ICP-MS), X-ray photoelectron spectroscopy (XPS), dynamic light scattering (DLS), zeta potential, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX) analyses. Furthermore, the nanostructures were subjected to a ROS-Glo H2O2 assay for assessing their antioxidant potential, MTT assay for determining their anticancer effects, and antimicrobial testing against S. aureus, P. aeruginosa, and C. albicans strains. Results have proven promising for future biomedical applications, as the nanostructures inhibit oxidative stress in normal cells, with between two- and three-fold reduction and cell proliferation in tumor cells; a two-fold decrease in cell viability and microbial growth; an inhibition zone diameter of 4–6 mm and minimum inhibitory concentration (MIC) of 1–2 mg/mL. [ABSTRACT FROM AUTHOR]

Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect correlation lengths are investigated via High-Resolution X-ray Diffraction (HR-XRD) and the characteristic positron diffusion length is achieved by Doppler Broadening Spectroscopy (DBS). Moreover, a comparative analysis with our previous work (i.e., GaN/AlN/Si and GaN/AlN/Al2O3) has been carried out. Within the epitaxial GaN layer defined by the relationship F 4 ¯ 3 m (111) 3C-SiC || P 63 m c (0002) AlN || P 63 m c (0002) GaN, the total dislocation density has been assessed as being 1.47 × 1010 cm−2. Compared with previously investigated heterostructures (on Si and Al2O3 substrates), the obtained dislocation correlation lengths (Le = 171 nm and Ls =288 nm) and the mean distance between two dislocations (rd = 82 nm) are higher. This reveals an improved crystal quality of the GaN with SiC as a growth template. In addition, the DBS measurements upheld the aforementioned results with a higher effective positron diffusion length L eff GaN 2 = 75 ± 20 nm for the GaN layer. [ABSTRACT FROM AUTHOR]

Developing a sensing layer with high electroactive properties is an important aspect for proper functionality of a wearable sensor. The polymeric nanocomposite material obtained by a simple electropolymerization on gold interdigitated electrodes (IDEs) can be optimized to have suitable conductive properties to be used with direct current (DC) measurements. A new layer based on polyaniline:poly(4-styrenesulfonate) (PANI:PSS)/single-walled carbon nanotubes (SWCNT)/ferrocene (Fc) was electrosynthesized and deposed on interdigital transducers (IDT) and was characterized in detail using electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV), scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), and X-ray diffraction (XRD). The sensor characteristics of the material towards carbon monoxide (CO) in the concentration range of 10–300 ppm were examined, showing a minimal relative humidity interference of only 1% and an increase of sensitivity with the increase of CO concentration. Humidity interference could be controlled by the number of CV cycles when a compact layer was formed and the addition of Fc played an important role in the decrease of humidity. The results for CO detection can be substantially improved by optimizing the number of deposition cycles and enhancing the Fc concentration. The material was developed for selective detection of CO in real environmental conditions and shows good potential for use in a wearable sensor. [ABSTRACT FROM AUTHOR]

The present article evaluates, in qualitative and quantitative manners, the characteristics (i.e., thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge, and screw dislocation densities), within two GaN/AlN/Si heterostructures, that alter their efficiencies as positron moderators. The structure of the GaN film, AlN buffer layer, substrate, and their growth relationships were determined through high-resolution transmission electron microscopy (HR-TEM). Data resulting from high-resolution X-ray diffraction (HR-XRD) was mathematically modeled to extract dislocation densities and correlation lengths in the GaN film. Positron depth profiling was evaluated through an experimental Doppler broadening spectroscopy (DBS) study, in order to quantify the effective positron diffusion length. The differences in values for both edge (ρ d e) and screw (ρ d s) dislocation densities, and correlation lengths (Le, Ls) found in the 690 nm GaN film, were associated with the better effective positron diffusion length (Leff) of L eff GaN 2 = 43 ± 6 nm. [ABSTRACT FROM AUTHOR]

This study assesses the characteristics (edge and screw dislocation density) of a commercially available GaN/AlN/Al2O3 wafer. The heterostructure was evaluated by means of high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), and Doppler-Broadening Spectroscopy (DBS). The results were mathematically modeled to extract defect densities and defect correlation lengths in the GaN film. The structure of the GaN film, AlN buffer, Al2O3 substrate and their growth relationships were determined through HR-TEM. DBS studies were used to determine the effective positron diffusion length of the GaN film. Within the epitaxial layers, defined by a [GaN P 63 m c (0 0 0 2) || P 63 m c AlN (0 0 0 2) || (0 0 0 2) R 3 ¯ c Al2O3] relationship, regarding the GaN film, a strong correlation between defect densities, defect correlation lengths, and positron diffusion length was assessed. The defect densities ρ d e = 6.13 × 1010 cm−2, ρ d s = 1.36 × 1010 cm−2, along with the defect correlation lengths Le = 155 nm and Ls = 229 nm found in the 289 nm layer of GaN, account for the effective positron diffusion length Leff~60 nm. [ABSTRACT FROM AUTHOR]

This study assesses the characteristics (edge and screw dislocation density) of a commercially available GaN/AlN/Al 2 O 3 wafer. The heterostructure was evaluated by means of high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), and Doppler-Broadening Spectroscopy (DBS). The results were mathematically modeled to extract defect densities and defect correlation lengths in the GaN film. The structure of the GaN film, AlN buffer, Al 2 O 3 substrate and their growth relationships were determined through HR-TEM. DBS studies were used to determine the effective positron diffusion length of the GaN film. Within the epitaxial layers, defined by a [GaN P 63 m c (0 0 0 2) || P 63 m c AlN (0 0 0 2) || (0 0 0 2) R 3 ¯ c Al 2 O 3 ] relationship, regarding the GaN film, a strong correlation between defect densities, defect correlation lengths, and positron diffusion length was assessed. The defect densities ρ d e = 6.13 × 10 10 cm -2 , ρ d s = 1.36 × 10 10 cm -2 , along with the defect correlation lengths L e = 155 nm and L s = 229 nm found in the 289 nm layer of GaN, account for the effective positron diffusion length L eff ~60 nm.