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Aluminium metal matrix composites (AMMCs) using alumina (Al2O3) and silicon carbide (SiC) as reinforcement elements are gaining significant interest in various applications because of their excellent properties. In this study, Al2O3/SiC with compositions (0.5 wt.%, 1.5 wt.%, and 2.5 wt.% for each) were used as reinforcement elements in an aluminium alloy (AA2024-T6). The samples prepared were AA2024-T6 + (0.5Al2O3/0.5SiC), AA2024-T6 + (1.5Al2O3/1.5SiC), and AA2024-T6 + (2.5Al2O3/2.5SiC) using a stir-casting technique. The experimental study included density calculation mechanical properties, such as tensile strength, compressive strength and hardness. The study also included a microstructure examination of the fracture surface of the tensile specimens. The results showed that incorporating Al2O3/SiC as reinforcement materials into aluminium AA2024-T6 significantly improved its properties. Hence, increasing the reinforcement with compositions of 2.5Al2O3/2.5SiC into AA2024-T6 showed a drop in density and increased mechanical properties, such as ultimate tensile strength, compressive strength and hardness, compared to the base alloy (AA2024-T6). Furthermore, the scanning electron microscopy analysis revealed the uniform distribution of the reinforcement particles resulting in strong bonding with the matrix. The findings suggest that Al2O3/SiC reinforced with AA2024-T6 can be used in applications where a combination of lightweight and high strength is needed. [ABSTRACT FROM AUTHOR]

Engineering ceramics and their composites are widely used owing to their excellent properties, including high wear, corrosion and heat resistance, low friction coefficient, and low thermal conductivity; thus, the current paper presents a comprehensive review of the most common types of engineering ceramics, demonstrating their key properties, advantages, potential applications, and challenges. This paper also provides prevailing methods for tackling the engineering ceramic challenges and maximizing their applicability. This review paper focuses on alumina (Al2O3), silicon carbide (SiC), zirconia (ZrO2), aluminum nitride (AlN), and silicon nitride (Si3N4), and explores their usability in automotive, aerospace, and tribological applications. Additionally, the incorporation of reinforcing nanomaterials, i.e., graphene and carbon nanotubes or their combination with second-phase reinforcing nanomaterials in these types of ceramics to improve their physico-mechanical properties is also discussed. By strategically adding these reinforcing materials, the brittleness of ceramics can be mitigated, leading to materials that are more suitable for demanding applications in various high-performance industries. [ABSTRACT FROM AUTHOR]

This study aims to develop a reference material that enables precise management of dopant distribution in power semiconductors. We thoroughly investigate the structural and surface properties of 4H-silicon carbide (4H-SiC) single crystals implanted without annealing using aluminum (Al) and phosphorus (P) ions. Ion-implanted 4H-SiC was thoroughly evaluated using advanced techniques, including X-ray diffraction (XRD), field emission transmission electron microscopy (FE-TEM), atomic force microscopy (AFM), time of flight medium energy ion scattering (ToF-MEIS), and secondary ion mass spectrometry (SIMS). The evaluated results indicate that, without post-annealing, ion-implanted 4H-SiC can serve as an effective reference material for the precise control of trace elements and the quantitative monitoring of dopant distribution in power semiconductor applications. [ABSTRACT FROM AUTHOR]

The document discusses the importance of developing new materials to meet the increasing energy needs of society. It focuses on carbon-related composites for sensors and energy storage, presenting state-of-the-art research on their synthesis, properties, and applications. The Special Issue includes 19 original research articles and review papers that cover a wide range of topics, from the use of carbon fibers in various applications to the development of supercapacitors and batteries using carbon-based materials. The articles aim to provide new insights into the field of carbon-related materials for sensing and energy storage applications. [Extracted from the article]

Objective: The study aimed to optimize protocols for the joint extraction of deoxyribonucleic acid (DNA) and ribonucleic acid (RNA) from 0.025 × 106 CFU of Candida albicans, targeting to overcome the challenges in the extraction of these genetic materials. Materials and methods: From this, treated silicon carbide (SiC) granules were added to fungal samples from methods 1, 2, and 3 obtained from aliquots of BHI or Sabouraud medium to cause cell lysis and enable the isolation of these macromolecules by phenol and chloroform. The concentration and integrity of the extracted nucleic acids were analyzed, respectively, by spectrophotometry using the A260/A280 ratios and 1% agarose gel electrophoresis. Results: Therefore, method 3 is the one that most comprises samples considered pure of both DNA and RNA, simultaneously. Furthermore, the presence of intact RNAs corresponding to the base pair size such as 5.8 S rRNA and tRNA was verified during electrophoresis, considering the particularities of RNA, which makes it very unstable and easily degraded. Conclusions: Thus, it results in a faster and simpler method in addition to obtain promising results using minimal amounts of biological sample and offering a valuable alternative for small laboratories to work with molecular biology. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) stands out for its remarkable hardness, thermal stability, and chemical resistance, making it a critical material in advanced engineering applications, particularly in power electronics, aerospace, and semiconductor industries. However, its inherent brittleness and relatively low fracture toughness pose significant challenges during precision manufacturing processes, particularly during the laser stealth dicing—a pivotal process for wafer separation. This review provides a comprehensive analysis of the fracture toughness of SiC, exploring its dependence on microstructural factors, such as grain size, fracture mode (transgranular vs. intergranular), and toughening mechanisms, including the crack deflection and bridging. The effects of temperature and mechanical anisotropy on the fracture resistance of SiC are discussed. Particular attention is given to how SiC's low fracture toughness and brittle nature affect the controlled crack propagation critical to the dicing process. The review synthesizes key experimental findings from various fracture-toughness measurement techniques, highlighting their relevance for optimizing the laser processing parameters. By linking the fracture mechanics of SiC to its performance in laser stealth dicing, this review provides critical guidance for enhancing the process, ensuring greater efficiency and reliability in SiC wafer separation for advanced technologies. [ABSTRACT FROM AUTHOR]

A novel planar silicon carbide (SiC) MOSFET integrated with both MOS-channel diode (MCD) and junction barrier Schottky diode (JBS) on the same chip (MCD-JBSFET) is proposed and investigated through Technology Computer-Aided Design (TCAD) simulations in this paper. The proposed device features the lowest turn-on voltage and the best current conduction capability under the reverse-biased conditions, allowing it to achieve the same reverse conduction capability with fewer MCDs compared to conventional MOSFET with MCD structures (MCDFET). This reduction in the number of MCDs enables more channels to operate under forward-biased conditions, thereby improving power density. Compared to a conventional MOSFET integrated with JBS structure (JBSFET), the reverse current in the MCD-JBSFET flows through both the MCD and JBS, which suppresses the peak lattice temperature at Schottky contact and enhances the high-temperature robustness, especially under surge current conditions. In addition, the split-gate structure in the proposed structure optimizes the reverse capacitance and the figure of merit Ron,sp × Qg by factors of 0.65 and 2.15, respectively. Finally, the switching losses are reduced by 40.2%, indicating the suitability of MCD-JBSFET for high-frequency and high-current applications. [ABSTRACT FROM AUTHOR]

The evaporation dynamics of sessile droplets on re-entrant microstructures are critical for applications in microfluidics, thermal management, and self-cleaning surfaces. Re-entrant structures, such as mushroom-like shapes with overhanging features, trap air beneath droplets to enhance non-wettability. The present study examines the evaporation of a water droplet on silicon carbide (SiC) and silicon dioxide (SiO2) re-entrant structures, focusing on the effects of material composition and solid area fraction on volume reduction, contact angle, and evaporation modes. Using surface free energy (SFE) as an indicator of wettability, we find that the low SFE of SiC promotes quick depinning and contact line retraction, resulting in shorter CCL phases across different structures. For instance, the CCL phase accounts for 55–59% of the evaporation time on SiC surfaces, while on SiO2 it extends to 51–68%, reflecting a 7–23% increase in duration due to stronger pinning effects. Additionally, narrower pillar gaps, which increase the solid area fraction, further stabilize droplets by extending both CCL and constant contact angle (CCA) phases, while wider gaps enable faster depinning and evaporation. These findings illustrate how hydrophobicity (via SFE) and structural geometry (via solid area fraction) influence microscale interactions, offering insights for designing surfaces with optimized liquid management properties. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) has excellent mechanical and chemical properties and is used in a wide range of applications. It has the characteristic of rapidly heating up to several hundred degrees within one minute when irradiated with microwave radiation at 2.45 GHz. In this study, we investigated the oxidation curing process and microwave heating properties of polycarbosilane (PCS). A PCS disk-shaped green body was fabricated via uniaxial pressure molding. Silicon carbide was prepared by varying the pyrolysis temperature, and the heating characteristics of the microwaves were evaluated. The results showed that the samples pyrolyzed at 1300 °C after oxidation curing for 2 h at 180 °C rapidly heated up to 802 °C within 1 min, and the temperature remained constant for 120 min. The maximum temperature of the samples pyrolyzed at 1500 °C was relatively low, but the rate of heating was the highest. The microstructures and crystal structures of the microwaves as a function of the pyrolysis temperature were investigated. [ABSTRACT FROM AUTHOR]

Ranging from the most demanding technical applications to soft, extremely ductile wrapping foil, aluminum is one of the most versatile and reasonably priced metallic materials. These are attributable to the unique blend of features that it provides, together with its alloys, owing to its lightweight, and some of its alloys have higher strengths than that of structural steel. However, it is expected that the demand for aluminum will quadruple within the next 10 years, and as a result, the aerospace industry is increasingly turning to recycled alloys to fulfill its high demand. This study uses the ab initio method, implemented in the quantum espresso code, to examine the influence of pressure on the structural and mechanical properties of cubic silicon carbide alloyed with aluminum (Al) and magnesium (Mg). The study is motivated by the aerospace industry's growing need for sustainable materials. Some of the carbon atoms were swapped out for Al or Mg or both (co-doping) atoms in order to create the alloys. The results demonstrated that the application of pressure significantly influences both the structural and mechanical properties of the alloys, making them a promising option for the construction of environmentally friendly aircraft components. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) power modules are increasingly being used in high-voltage and high-frequency applications due to their superior electrical and thermal qualities. However, the issue of the partial discharge (PD) phenomenon raises serious reliability difficulties resulting in insulation failure, performance degradation, and potential device collapse. This paper provides a thorough assessment of the current PD detection strategies in SiC power modules. The issues provided by SiC devices' distinct operational features, such as high switching frequencies and higher voltage stresses, which hinder PD detection and mitigation, are widely investigated. This review compares the effectiveness, benefits, and limitations of various detection methods, emphasizing the need for better strategies to ensure long-term reliability and performance. This study gives an in-depth overview of the numerous forms of PD phenomena that occur in power modules, including internal and surface discharges, as well as how they appear under various detection systems. It examines the performance of several methods for power module technologies such as SiC. To address these PD issues, this article proposes ways to improve reliability and detection accuracy. [ABSTRACT FROM AUTHOR]

SiC particle reinforced aluminum matrix composites (SiCp/Al) are widely used in aviation, weaponry, and automobiles because of their excellent service performance. Wire electrical discharge machining (WEDM) regardless of workpiece hardness has become an alternative method for processing SiCp/Al composites. In this paper, the temperature distribution and the discharge crater size of the SiCp/Al composite are simulated by a thermophysical model during a single-pulse discharge process (SPDP) based on the random distribution of SiC particles. The material removal mechanism of the SiCp/Al composite during the multi-pulse discharge process (MPDP) is revealed, and the surface roughness (Ra) of the SiCp/Al composite is predicted during the MPDP. The thermophysical model simulation results during the MPDP and experimental characterization data indicate that the removal mechanism of SiCp/Al composite material consists of the melting and vaporization of the aluminum matrix, as well as the heat decomposition and shedding of silicon carbide particles. Pulse-on time (Ton), pulse-off time (Toff), and servo voltage (SV) have a great influence on surface roughness. The Ra increases with an increase in Ton and SV, but decreases slightly with an increase in Toff. Moreover, compared with experimental data, the relative error of Ra calculated from the thermophysical model is 0.47–7.54%. This means that the developed thermophysical model has a good application and promotion value for the WEDM of metal matrix composite material. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs), as a new material, have the advantages of low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency compared with silicon (Si)-based MOSFETs. Therefore, in many industrial applications, Si MOSFETs have been replaced by SiC MOSFETs. However, as the switching speed increases exponentially, some problems are amplified, the most serious of which is the overshoot of current and voltage. The increase in voltage and current slope caused by high switching speeds inevitably leads to overshoot, oscillations, and additional losses in the circuit. This paper focusses on the actual performance of the optimised switching strategy (OSS) in circuit testing and combines the existing simulation results to verify the practicability of OSS. In this paper, the optimised switching strategy is introduced first, and then, the LTspice model of SiC MOSFET is established in detail and verifies the feasibility of the OSS through half-bridge circuit simulation. Finally, the test platform is built using a programmable gate drive module (2ASC-12A1HP). Through a 400 V/30 A double-pulse test, the practicality of the OSS is verified. The experiments show that the OSS can greatly improve the switching performance of SiC MOSFETs. [ABSTRACT FROM AUTHOR]

The short-circuit (SC) immunity of power silicon carbide (SiC) MOSFETs is critical for high-reliability applications, where robust monitoring and protection strategies are essential to ensure system safety. Despite their superior voltage blocking capabilities and high energy efficiency, SiC MOSFETs exhibit greater sensitivity to SC-induced degradation compared to their silicon counterparts. This increased vulnerability necessitates the precise assessment of the key SC performance metrics, such as short-circuit withstand time ( T S C W T ), as well as a deeper understanding of the failure mechanisms. In this study, a comprehensive experimental methodology for evaluating the SC behavior of SiC MOSFETs is presented and validated using industrial references. The investigation further explores the concept of a Safe Operating Area (SOA) under SC conditions, highlighting the significant impact of quasi-simultaneous SC events on device lifetime. Additionally, an application case study demonstrates how these events can drastically reduce the device's lifespan. [ABSTRACT FROM AUTHOR]

Preventing severe corrosion incidents caused by air ingress accidents in high-temperature gas-cooled reactors (HTGRs) while improving heat removal efficiency from the core is of paramount importance. To enhance both safety and efficiency, a sleeveless silicon carbide (SiC)-matrix fuel compact has been proposed. This study evaluates the 10-hour oxidation of reaction-sintered SiC (RS-SiC)-matrix fuel compact under the conditions of an air ingress accident within the temperature range of 1000 to 1400 °C. The oxidation tests were conducted in a stagnant air environment without flow. As a result, it is demonstrated that RS-SiC exhibits exceptional resistance to air oxidation up to 1400 °C, as shown by the thermogravimetric analysis (TGA), with minimal mass loss due to the oxidation of free carbon. Scanning electron microscopy with energy-dispersive X-Ray spectroscopy (SEM–EDX) analysis reveals that the morphology and thickness of the SiO2 layer formed on the RS-SiC surface vary with temperature. At 1400 °C, uniform oxide layer thickness ranging from 1.59 to 4.10 μm and localized nodule-like oxide formations of approximately 10 μm are observed. In contrast, at 1000–1200 °C, thinner oxide layers are identified, indicating that oxide growth accelerates at higher temperatures. The oxidation rates measured provide insights into the mechanisms of oxide growth. [ABSTRACT FROM AUTHOR]

The high-energy ball milling process was applied to fabricate a composite material from 7075 aluminium alloy milling chips, silicon carbide, and titanium dioxide powders. Raw materials were ground, and the obtained powders were cold pressed and sintered. It was demonstrated that this method can be used in the recycling of aluminium alloy scrap characterised by a high surface-to-volume ratio, and also that chemical removal of the oxide layer from chips is not necessary. The finest particles, with 50 vol.% of their population below 36 μm, were obtained after grinding for 60 min at a 1000 rpm rotational speed. Such an intensive grinding was necessary to fabricate the compact composite material with a homogeneous microstructure and a low porosity of 0.7%. The corrosion resistance of the composites was studied in 3.5 wt.% NaCl solution using cyclic voltammetry and electrochemical impedance spectroscopy, and corrosion rates in the range of ca. 342 and 3 μA∙cm−2 were obtained. The corrosion mechanism includes aluminium alloy dissolution at the matrix/reinforcement interphase and around intermetallic particles localised within the matrix grains. [ABSTRACT FROM AUTHOR]

In this study, the wear behavior of AA7075/silicon carbide/fly ash hybrid surface composites processed with a clean and green friction stir processing technique was investigated. The microstructure of the composites was investigated to determine the particle dispersion. Wear tests using a pin-on-disc tribometer were conducted, and wear tracks and debris analyses were conducted using scanning electron microscopic imaging, EDX, and mapping. The wear rate of the composites was higher in the case of the composites with agglomerated zones, which led to the loose SiC/fly ash particles pulling out during the action of dry sliding. However, on the other hand, the wear resistance was improved in the composites with uniformly distributed SiC/fly ash particles. The hard SiC/fly ash particles acted as optimized load-bearing asperities and induced more wear resistance during the action of dry sliding against the mating plate, which was made of mild steel. In the case of the well-dispersed composites, the wear mechanisms shifted from fretting fatigue and adhesion to abrasion. The presence of a high Fe content in the wear debris was confirmed in the most wear-resistant composite sample, S-20, which was produced with the following parameters: tool rotation (w) of 1000 rpm, tool traverse (v) of 40 mm/min, hybrid ratio (HR) of 75:25, and a volume percentage of reinforcements (vol.%) of 8. [ABSTRACT FROM AUTHOR]

The effect of casting and T6 heat treatment at 540 °C for 3 h, quenching in water, heating to 180 °C for 4 h and cooling at room temperature on the mechanical properties and thermal expansion of Al6063 with reinforcement of 10 wt.% SiC/1 wt.% Y2O3/3 wt.% Graphite, 3 wt.% MoS2 was studied, comparing the properties of the material before and after treatment. The results of the tensile test found that the ultimate tensile stress (UTS) increased without reinforcement applied but decreased the elongation at breaking point (%El). This contrasts with the reinforcement applied group, which showed an increase in the UTS and %EL by 4.1% and 32.5% in Gr, 10.5% and 44.9% in MoS2, respectively. Meanwhile, the UTS and %EL increased by 23.5% and 26.98% in Gr, 22.7% and 15.0% in MoS2, respectively, after the T6. Cracking analysis in the treatment without the addition of reinforcement showed ductile and brittle fracture after casting, similar to the effects of being treated by T6, which was characterized by brittle fracture. This was contrary to the reinforcement-added treatment, which was characterized by ductile fracture before and after treatment. The thermal expansion coefficient (CTE) after treatment without reinforcement applied was reduced, while no significant difference was seen with reinforcement applied. [ABSTRACT FROM AUTHOR]

In this study, we present the design, simulation, and implementation of a DC-DC synchronous buck converter utilizing IISB's 2 μ m 4H-silicon carbide (SiC) complementary metal–oxide–semiconductor (CMOS) technology. The converter is designed to meet the demands of modern integrated circuits, particularly in the field of integrated power management. The SiC technology offers enhanced performance and reliability at high temperatures, making it especially suitable for applications that operate in these conditions, including automotive systems, and aerospace, among others. The power transistors and gate drivers are fully integrated on-chip, optimizing efficiency and minimizing footprint. Additionally, the study contributes to the understanding of SiC technology and its application in integrated circuit design. Simulation results demonstrate a peak efficiency of 86.6% at 120 mA load current and 84.8% at 300 mA load current, showing the converter performance under different operating conditions. Furthermore, at high temperatures (295 °C), the converter achieves an efficiency of 89.6%, demonstrating its robustness and versatility in extreme environments. These findings contribute to the advancement of integrated circuit design and facilitate advancements in more efficient and robust power management solutions. [ABSTRACT FROM AUTHOR]

Thin films of strontium titanate, which reveal high structure quality and tunable properties prospective for microwave applications at room temperature, were grown on a semi-insulating silicon carbide substrate using magnetron sputtering for the first time. The films' growth mechanisms were studied using medium-energy ion scattering, and the films' structures were investigated using X-ray diffraction. The electrical characteristics of planar capacitors based on strontium titanate films were measured at a frequency of 2 GHz using a high-precision resonance technique. It is shown that the tendency to improve the crystalline structure of strontium titanate film with an increase in the substrate temperature is most pronounced for films deposited at elevated working gas pressure under low supersaturation conditions. Planar capacitors formed on the basis of oriented SrTiO3 films on silicon carbide showed tunability n = 36%, with a loss tangent of 0.008–0.009 at a level of slow relaxation of capacitance, which is significantly lower than the data published currently regarding planar tunable ferroelectric elements. This is the first successful attempt to realize a planar SrTiO3 capacitor on a silicon carbide substrate, which exhibits a commutation quality factor more than 2500 at microwaves. [ABSTRACT FROM AUTHOR]

Hybrid Power Switches (HPS) combine the advantages of SiC unipolar and Si bipolar devices and therefore can bridge the gap between these technologies. In this paper, the performance of a hybrid power switch configuration based on the latest SiC MOSFET and Si IGBT technologies is presented. The device is evaluated through experimental measurements of its characteristics under various conditions. The results show the HPS can achieve switching losses as low as a SiC MOSFET while offering the high current capability of the IGBT without significant increase in costs. [ABSTRACT FROM AUTHOR]

The silicon carbide (SiC) Schottky diode (SBD) detector in a SiC hybrid photomultiplier tube (HPMT) generates signals by receiving photocathode electrons with an energy of 10 keV. So, the performance of the SiC SBD under electron irradiation with an energy of 10 keV has an important significance for the application of the SiC-HPMT. However, studies on 10 keV radiation effects on the SiC SBDs were rarely reported. In this paper, the performance degradation of the SiC SBDs irradiated by 10 keV electrons at different fluences was investigated. After the irradiation, the forward current of the SiC SBDs increased, and the turn-on voltage decreased with the irradiation fluences until 1.6 × 1016 cm−2. According to the capacitance–voltage (C-V) curves, the effective doping concentration increased slightly after the irradiation, and an obvious discrepancy of C-V curves occurred below 5 V. Moreover, as a radiation detector, the peak position of the α-particles' amplitude spectrum changed slightly, and the energy resolution was also slightly reduced after the irradiation due to the high collection charge efficiency (CCE) still being larger than 99.5%. In addition, the time response of the SiC SBD to the 50 ns pulsed X-ray was almost not affected by the irradiation. The results indicated that the performance degradation of the SiC SBD irradiated at the fluence of 1.5 × 1017 cm−2 would not result in a deterioration of the properties of the SiC-HPMT and showed an important significance for the supplement of the radiation resistance of the SiC SBD radiation detector. [ABSTRACT FROM AUTHOR]

In this study, the influence of silicon carbide on an aluminum alloy's yield tensile strength, ultimate tensile strength, compressive strength, tensile toughness and impact toughness were investigated. Meanwhile, the aluminum alloy specimens were exposed to the dry–wet alternations with a 3% NaCl solution or 3% Na2SO4 solution. Scanning electron microscope (SEM) photos and scanning electron microscopy energy spectra (SEM-EDS) were obtained. The results indicate that the silicon carbide with a mass ratio of 0%~8% of the total mass of the aluminum alloy can increase the yield tensile strength, the ultimate tensile strength, and the compressive strength by rates of 0%~30.4%, 0%~14.1% and 0%~13.1%. However, when the mass ratio of the silicon carbide increased from 8% to 10%, the yield tensile strength, the ultimate tensile strength and the compressive strength decreased by rates of 0%~3.2%, 0%~2.6% and 0%~0.43%. The tensile toughness and the impact toughness decreased when silicon carbide was added, with reduction rates of 0%~15.3% and 0%~12.8%. The NaCl dry–wet alternations led to decreases in the yield tensile strength, the ultimate tensile strength, the compressive strength, the tensile toughness and the impact toughness by rates of 0%~7.3%, 0%~6.7%, 0%~13.9%, 0%~12.7% and 0%~11.2%, respectively. After the Na2SO4 dry–wet alternations, the corresponding decreasing rates were 0%~5.1%, 0%~5.4%, 0%~1.73%, 0%~11.4% and 0%~9.7%. The addition of silicon carbide resulted in a decrease in the effect on the mechanical strength by the NaCl and Na2SO4 dry–wet alternations. The elements carbon, oxygen, magnesium, aluminum and silicon were observed in the aluminum alloy. The structures of the aluminum alloy with 8% silicon carbide were the highest. [ABSTRACT FROM AUTHOR]

Although the irreplaceable position of silicon (Si) semiconductor materials in the field of information has become a consensus, new materials continue to be sought to expand the application range of semiconductor devices. Among them, research on wide bandgap semiconductors has already achieved preliminary success, and the relevant achievements have been applied in the fields of energy conversion, display, and storage. However, similar to the history of Si, the immature material grown and device manufacturing processes at the current stage seriously hinder the popularization of wide bandgap semiconductor-based applications, and one of the crucial issues behind this is the defect problem. Here, we take amorphous indium gallium zinc oxide (a-IGZO) and 4H silicon carbide (4H-SiC) as two representatives to discuss physical/mechanical properties, electrical performance, and stability from the perspective of defects. Relevant experimental and theoretical works on defect formation, evolution, and annihilation are summarized, and the impacts on carrier transport behaviors are highlighted. State-of-the-art applications using the two materials are also briefly reviewed. This review aims to assist researchers in elucidating the complex impacts of defects on electrical behaviors of wide bandgap semiconductors, enabling them to make judgments on potential defect issues that may arise in their own processes. It aims to contribute to the effort of using various post-treatment methods to control defect behaviors and achieve the desired material and device performance. [ABSTRACT FROM AUTHOR]

This paper presents aspects related to the indirect thermographic measurement of a C2M0280120D transistor in pulse mode. The tested transistor was made on the basis of silicon carbide and is commonly used in many applications. During the research, the pulse frequency was varied from 1 kHz to 800 kHz. The transistor case temperature was measured using a Flir E50 thermographic camera and a Pt1000 sensor. The transistor die temperature was determined based on the voltage drop on the body diode and the known characteristics between the voltage drop on the diode and the temperature of the die. The research was carried out in accordance with the presented measuring standards and maintaining the described conditions. The differences between the transistor case temperature and the transistor die temperature were also determined based on simulation work performed in Solidworks 2020 SP05. For this purpose, a three-dimensional model of the C2M0280120D transistor was created and the materials used in this model were selected; the methodology for selecting the model parameters is discussed. The largest recorded difference between the case temperature and the junction temperature was 27.3 °C. The use of a thermographic camera allows the transistor's temperature to be determined without the risk of electric shock. As a result, it will be possible to control the C2M0280120D transistor in such a way so as not to damage it and to optimally select its operating point. [ABSTRACT FROM AUTHOR]

This study evaluates the annual global energy-savings potential of various power electronics applications utilizing commercial silicon carbide (SiC) wide bandgap (WBG)-based power converters. As the first analysis to focus on real market products, our findings reveal that SiC-based converters offer significant energy-saving potential across all examined applications. Additionally, given the substantial yearly growth in installing photovoltaic (PV) systems and electric vehicle (EV) chargers, we project a considerable future energy-saving potential. This research underscores the importance of SiC technology in enhancing energy efficiency and supports its broader adoption in power electronics to achieve global energy savings. [ABSTRACT FROM AUTHOR]

A novel clamped voltage equalization strategy is presented for series-connected Silicon Carbide (SiC) Metal–Oxide semiconductor Field-Effect transistors (MOSFETs) in this paper. Differences in device parameters and circuit asymmetry result in the uneven voltage distribution of series-connected SiC MOSFETs, which threatens the safe operation of the circuit. Dynamic voltage equalization is difficult to achieve due to the fast switching speed of SiC MOSFETs. This paper analyzes the switching characteristics and dynamic voltage equalization characteristics of SiC MOSFETs. Based on the analysis, an energy recovery strategy based on the clamping auxiliary circuit is proposed. A 2.8 kW (50 KHz) prototype is fabricated and tested to verify the strategy. Measurement results show that the maximum voltage stress is suppressed from 600 V to less than 320 V in the experimental condition. [ABSTRACT FROM AUTHOR]

Volumetric ceramic receivers can be regarded as a promising technology to heat air above 1000 °C for solar thermal electricity production. In this study, the thermal shock behavior of commercial 10 ppi (A) and 20 ppi (B) oxide-bonded silicon carbide (ob-SiC) reticulated porous ceramic (RPC) foams was evaluated using the SF60 solar furnace at Plataforma Solar de Almería. The foams were subjected to well-controlled temperature cycles ranging from 800 to 1000, 1200, 1300 or 1400 °C, for 25, 100, and 150 cycles. The extent of the damage after thermal shock was determined by crushing tests. The damage was found to be critically dependent on both the bulk density and cell size. Decreasing both the bulk density and cell size resulted in better thermal shock resistance. The B foam exhibited approximately half the stress degradation compared to the A foam when exposed to a temperature difference of 600 K (in the range of 800 to 1400 °C) and subjected to 150 cycles. [ABSTRACT FROM AUTHOR]

Polycrystalline silicon carbide (SiC) is a highly valuable material with crucial applications across various industries. Despite its benefits, processing this brittle material efficiently and with high quality presents significant challenges. A thorough understanding of the mechanisms involved in processing and removing SiC is essential for optimizing its production. In this study, we investigated the sawing characteristics and material removal mechanisms of polycrystalline silicon carbide (SiC) ceramic using a diamond wire saw. Experiments were conducted with high wire speeds of 30 m/s and a maximum feed rate of 2.0 mm/min. The coarseness value (Ra) increased slightly with the feed rate. Changes in the diamond wire during the grinding process and their effects on the grinding surface were analyzed using scanning electron microscopy (SEM), laser confocal microscopy, and focused ion beam (FIB)-transmission electron microscopy (TEM). The findings provide insights into the grinding mechanisms. The presence of ductile grinding zones and brittle fracture areas on the ground surface reveals that external forces induce dislocation and amorphization within the grain structure, which are key factors in material removal during grinding. [ABSTRACT FROM AUTHOR]

The primary characteristic of ablative materials is their fire resistance. This study explored the development of cost-effective ablative materials formed into application-specific shapes by using a polymer matrix reinforced with ceramic powder. A thermoplastic (polypropylene; PP) and a thermoset (polyester; UPE) matrix were used to manufacture ablative materials with 50 wt% silicon carbide (SiC) particles. The reference composites (50 wt% SiC) were compared to those with 1 and 3 wt% short glass fibers (0.5 mm length) and to composites using a 1 and 3 wt% glass fiber mesh. Fire resistance was tested using a butane flame (900 °C) and by measuring the transmitted heat with a thermocouple. Results showed that the type of polymer matrix (PP or UPE) did not influence fire resistance. Composites with short glass fibers had a fire-resistance time of 100 s, while those with glass fiber mesh tripled this resistance time. The novelty of this work lies in the exploration of a specific type of material with unique percentages of SiC not previously studied. The aim is to develop a low-cost coating for industrial warehouses that has improved fire-protective properties, maintains lower temperatures, and enhances the wear and impact resistance. [ABSTRACT FROM AUTHOR]

Laser additive manufacturing with mixed powders of aluminum alloy and silicon carbide (SiC) or boron carbide (B4C) is investigated in this experiment. With various mixing ratios of SiC/Al to form metal matrix composites (MMC), their mechanical and physical properties are empirically investigated. Parameters such as laser power, scan speed, scan pattern, and hatching space are optimized to obtain the highest density for each mixing ratio of SiC/Al. The mechanical and thermal properties are systematically investigated and compared with and without heat treatment. It shows that 2 wt% of SiC obtained the highest strength and Young's modulus. Graded composite additive manufacturing (AM) of MMC is also fabricated and characterized. Various types of MMC devices, such as heat sink using graded SiC MMC and grid type three-dimensional (3D) neutron collimators using boron carbide (B4C), were also fabricated to demonstrate their feasibility for applications. [ABSTRACT FROM AUTHOR]

Silicon is a promising anode material for the increased performance of lithium-ion batteries because of its high elemental composition and specific capacity. The application of silicon on a commercial scale is restricted due to the limitation of volume expansion. Silicon is also expensive, making it difficult for large-scale commercialisation. Different methods were used to address these issues, including a sintering process and the sol–gel method, to form silicon carbide (SiC), a hard chemical compound containing silicon and carbon. The silicon carbide anode not only acts as a buffer for volume expansion but also allows for better infiltration of the electrolyte, increasing charge and discharge capacity in the battery. Like silicon, silicon carbides can be costly. The development of renewable energy systems is very important, especially in the development of energy storage systems that are not only efficient but also cost-friendly. The cost of the energy storage devices is lowered, making them easily accessible. Silicon carbides can be synthesised from sugarcane, which is the fibrous waste that remains after juice extraction. This could be beneficial, as we could never run out of such a resource, and it offers low carbon with a high surface area. Silicon carbides can be synthesised by carbothermal reduction of silica from sugarcane bagasse. This review provides a comprehensive understanding of silicon carbides and synthetic processes. The innovative use of waste to synthesise materials would reduce costs and comply with Sustainable Development Goals (SDGs) 7 (affordable and clean energy) and 13 (climate action). [ABSTRACT FROM AUTHOR]

This paper reports on an experimental investigation that used a full factorial design to study the main effects and the interaction effect of layer thickness and compaction thickness on the green part density in the binder jetting additive manufacturing of silicon carbide. A two-variable, two-level full factorial design was employed. The results show that the green part density was higher at the low level of layer thickness and at the high level of compaction thickness. These results can be useful in selecting the values of printing variables, enabling the fabrication of green parts with a desirable density that is crucial for advanced ceramic applications. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) MOSFETs exhibit superior performance compared to traditional silicon (Si) MOSFETs, characterized by faster switching speeds, lower on-resistance, higher breakdown voltage, and greater operational temperature tolerance. These attributes make SiC MOSFETs highly suitable for applications in electric vehicles, charging stations, and mobile devices. However, their rapid switching speed can intensify current and voltage overshoot and oscillations during device switching, leading to increased device losses or potential damage. To address this issue, this paper proposes a current-type active gate drive (AGD) circuit. The circuit first detects the rate of change in the drain current and drain-source voltage. Subsequently, it employs an analog amplifier circuit and adjustable drive resistors to decelerate the rate of change in the drain-source voltage and drain current. As a result, overshoot and oscillation in the drain-source voltage and drain current are mitigated. Experimental results demonstrate that the proposed AGD circuit can reduce drain current overshoot by 60%, drain-source voltage overshoot by 15.38%, and waveform oscillations. Additionally, the AGD circuit decreases conduction and turn-off losses by 24% and effectively mitigates electromagnetic interference (EMI) issues within the frequency range of 0.1 to 3 MHz. [ABSTRACT FROM AUTHOR]

This article presents an analysis of a converter based on an LC resonant inverter for induction heating applications. It employs a current-controlled variable transformer (VT) in conjunction with phase shift regulation (PS) to operate at a fixed frequency close to the resonance frequency. The converter maintains a small switching angle, enabling substantial load variations without sacrificing zero voltage switching (ZVS) for the transistors. This innovative method enhances the inverter's performance across the entire operating range. Additionally, a new design of the transformer structure with a variable ratio will be analyzed, enabling mathematical modeling. The obtained results demonstrate a performance exceeding 99%. Both the inverter and variable transformer designs were experimentally validated using a 15 kW, 200 kHz converter for induction heating applications with silicon carbide (SiC) MOSFETs. [ABSTRACT FROM AUTHOR]

Foamed ceramics with high closed porosity were prepared using granite scrap as the raw material and silicon carbide as a foaming agent, and the effects of Na2O, K2O, and MgO on the pore structure and properties of the foamed ceramics were investigated. The results show that both Na2O and K2O could reduce the viscosity of the melt and promote the formation of the liquid phase, and the increase in content could enhance the foaming ability of the blank. When the dosage of Na2O was 4–6 wt% and the dosage of K2O was 6–8 wt%, the homogeneity of the pore structure of the foamed ceramics could be effectively improved, and the samples exhibited an optimal performance, including a bulk density of 510.36–593.33 kg/m3, a closed porosity of 68.24–78.04%, a compressive strength of 1.33–2.66 MPa, and a water absorption capacity of 0.57–1.31%. A further increase in the Na2O and K2O dosages destroyed the uniformity of the pore structure, resulting in a large number of irregular macropores. MgO had a slight effect on regulating the pore structure of the foamed ceramics, and the increase in dosage promoted the precipitation of forsterite crystals, creating conditions suitable for the preparation of foamed ceramics with small pores. [ABSTRACT FROM AUTHOR]

Epitaxial bilayer graphene, grown by chemical vapor deposition on SiC substrates without silicon sublimation, is crucial material for graphene field effect transistors (GFETs). Rigorous characterization methods, such as atomic force microscopy and Raman spectroscopy, confirm the exceptional quality of this graphene. Post-nanofabrication, extensive evaluation of DC and high-frequency properties enable the extraction of critical parameters such as the current gain (fmax) and cut-off frequency (ft) of hundred transistors. The Raman spectra analysis provides insights into material property, which correlate with Hall mobilities, carrier densities, contact resistance and sheet resistance and highlights graphene's intrinsic properties. The GFETs' performance displays dispersion, as confirmed through the characterization of multiple transistors. Since the Raman analysis shows relatively homogeneous surface, the variation in Hall mobility, carrier densities and contact resistance cross the wafer suggest that the dispersion of GFET transistor's performance could be related to the process of fabrication. Such insights are especially critical in integrated circuits, where consistent transistor performance is vital due to the presence of circuit elements like inductance, capacitance and coplanar waveguides often distributed across the same wafer. [ABSTRACT FROM AUTHOR]

Recirculating aquaculture systems (RASs) offer significant advantages in aquaculture by markedly decreasing water usage and increasing culture density. A vital component within a RAS is the filler material, which serves as a surface for microbial colonization. Effective microbial treatment is crucial for the efficient operation of a RAS as it assists in purifying the wastewater generated within the system. Nevertheless, traditional fillers often show low efficiency in biofilm formation. The commercial silicon carbide used in this study is a foam ceramic filter with a density of about 0.4–0.55 g/cm3, a number of holes of about 10, and a through porosity of 80.9%, with a diameter of about 5 cm. This research investigates the utilization of a titanium dioxide–silicon carbide (TiO2-SiC) composite filler to improve the purification efficiency of ammonia nitrogen and chemical oxygen demand (COD) in aquaculture wastewater. The study involved the application of titanium dioxide films onto the surface of silicon carbide to produce the composite filler. This method takes advantage of the dipole interaction between titanium dioxide and microorganisms, which enhances biofilm culturing efficiency on the silicon carbide surface. The performance of three different fillers was assessed for their ability to purify aquaculture wastewater. Results showed that the TiO2-SiC composite filler was 1.67 times more effective in removing COD and 1.07 times more effective in removing ammonia nitrogen compared to using silicon carbide alone. These results demonstrate that the incorporation of a titanium dioxide coating substantially boosts the microbial colonization efficiency of silicon carbide, thereby enhancing the overall wastewater purification efficiency in RAS. [ABSTRACT FROM AUTHOR]

This article presents research on the influence of reduced graphene oxide on the mechanical properties of silicon carbide matrix composites sintered with the use of the Spark Plasma Sintering method. The produced sinters were subjected to a three-point bending test. An increase in flexural strength was observed, which reaches a maximum value of 503.8 MPa for SiC–2 wt.% rGO composite in comparison to 323 MPa for the reference SiC sample. The hardness of composites decreases with the increase in rGO content down to 1475 HV10, which is correlated with density results. Measured fracture toughness values are burdened with a high standard deviation due to the presence of rGO agglomerates. The KIC reaches values in the range of 3.22–3.82 MPa*m1/2. Three main mechanisms responsible for the increase in the fracture toughness of composites were identified: bridging, deflecting, and branching of cracks. Obtained results show that reduced graphene oxide can be used as a reinforcing phase to the SiC matrix, with an especially visible impact on flexural strength. [ABSTRACT FROM AUTHOR]

High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2–1.3 GHz), the phase coherence time (T2 ), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = −1.2 MHz) and anisotropic (b = 10–20 kHz) contributions of the electron–nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin–photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates. [ABSTRACT FROM AUTHOR]

Super-reduced phases (SRPs), such as silicon carbide (SiC) and metal silicides, have increasingly been reported in various geological environments. However, their origin remains controversial. SRP inclusions (e.g., metal silicides and metallic silicon (Si0)) within SiC are commonly believed to indicate a natural origin. Here, we identified an unusual SRP assemblage (SiC, (Fe,Ni)Si2, and Si0) in situ in an H5-type Jingshan ordinary chondrite. Simultaneously, our analysis showed that the SiC abrasives contain (Fe,Ni)Si2 and Si0 inclusions. Other inclusions in the artificial SiC were similar to those in natural SiC (moissanite) reported in reference data, including diverse metal silicides (e.g., FeSi, FeSi2, Fe3Si7, and Fe5Si3), as well as a light rare earth element-enriched SiO phase and Fe-Mn-Cr alloys. These inclusions were produced by the in situ reduction of silica and the interaction between Si-containing coke and hot metals during the synthesis of the SiC abrasives. The results demonstrate that the SRP assemblage in the Jingshan chondrite originates from abrasive contamination and that the SRP inclusions (with a low content of Ca, Al, Ti, and Zr) cannot be used as a conclusive indicator for natural SiC. Additionally, the morphologies, biaxiality, and polytypes (determined by Raman spectroscopy) of SiC abrasives bear resemblance to those reported for natural SiC, and caution must be exercised when identifying the origin of SRP in samples processed by conventional methods using SiC abrasives. At the end of this paper, we propose more direct and reliable methods for distinguishing between natural and synthetic SiC. [ABSTRACT FROM AUTHOR]

A silicon carbide (SiC) SGT MOSFET featuring a "一"-shaped P+ shielding region (PSR), named SPDT-MOS, is proposed in this article. The improved PSR is introduced as a replacement for the source trench to enhance the forward performance of the device. Its improvement consists of two parts. One is to optimize the electric field distribution of the device, and the other is to expand the current conduction path. Based on the improved PSR and grounded split gate (SG), the device remarkably improves the conduction characteristics, gate oxide reliability, and frequency response. Moreover, the integrated sidewall Schottky barrier diode (SBD) prevents the inherent body diode from being activated and improves the reverse recovery characteristics. As a result, the gate-drain capacitance, gate charge, and reverse recovery charge (Qrr) of the SPDT-MOS are 81.2%, 41.2%, and 90.71% lower than those of the DTMOS, respectively. Compared to the double shielding (DS-MOS), the SPDT-MOS exhibits a 20% reduction in on-resistance and an 8.1% increase in breakdown voltage. [ABSTRACT FROM AUTHOR]

Two-dimensional ultrasonic-assisted grinding (2D-UAG) has exhibited advantages in improving the machining quality of hard and brittle materials. However, the grinding mechanism in this process has not been thoroughly revealed due to the complicated material removal behaviors. In this study, multi-step 2D-UAG experiments of silicon carbide are conducted to investigate the effects of machining parameters on surface quality. The experimental results demonstrate that the tool amplitude and the workpiece amplitude have similar effects on surface roughness. In the rough grinding stage, the surface roughness decreases continuously with increasing ultrasonic amplitudes and the material is mainly removed by brittle fracture with different surface defects. Under semi-finishing and finishing grinding steps, the surface roughness first declines and then increases as the tool amplitude or workpiece amplitude grows from 0 μm to 8 μm and the inflection point appears around 4 μm. The surface damage contains small-sized pits with band-like distribution and localized grooves. Furthermore, the influences of cutting parameters on surface quality are similar to those in conventional grinding. Discussions of the underlying mechanisms for the experimental phenomena are also provided based on kinematic analysis. The conclusions gained in this study can provide references for the optimization of machining parameters in 2D-UAG of hard and brittle materials. [ABSTRACT FROM AUTHOR]

Silicon carbide, known for its distinct chemical and physical properties, is increasingly recognized as a critical material in sectors such as energy, space, and defense. Traditional production methods like the Acheson process are energy-intensive and costly, both in terms of investment and maintenance. Additionally, the concentrated nature of its manufacturing can lead to supply bottlenecks, hindering technological progress in key areas. To address these issues, this paper proposes a circular economy approach to silicon carbide production, leveraging the ecological challenge of rice waste disposal to create a new source of silica materials. It includes an evaluation of the economic and technological feasibility of this method and introduces a multidimensional composite index to identify potential early adopters for large-scale implementation. This innovative approach not only reduces reliance on critical minerals but also offers a solution to managing agricultural waste. [ABSTRACT FROM AUTHOR]

In this study, Silicon Carbide (SiC) nanoparticle-based serigraphic printing inks were formulated to fabricate highly sensitive and wide temperature range printed thermistors. Inter-digitated electrodes (IDEs) were screen printed onto Kapton® substrate using commercially avaiable silver ink. Thermistor inks with different weight ratios of SiC nanoparticles were printed atop the IDE structures to form fully printed thermistors. The thermistors were tested over a wide temperature range form 25 °C to 170 °C, exhibiting excellent repeatability and stability over 15 h of continuous operation. Optimal device performance was achieved with 30 wt.% SiC-polyimide ink. We report highly sensitive devices with a TCR of −0.556%/°C, a thermal coefficient of 502 K (β -index) and an activation energy of 0.08 eV. Further, the thermistor demonstrates an accuracy of ±1.35 °C, which is well within the range offered by commercially available high sensitivity thermistors. SiC thermistors exhibit a small 6.5% drift due to changes in relative humidity between 10 and 90%RH and a 4.2% drift in baseline resistance after 100 cycles of aggressive bend testing at a 40° angle. The use of commercially available low-cost materials, simplicity of design and fabrication techniques coupled with the chemical inertness of the Kapton® substrate and SiC nanoparticles paves the way to use all-printed SiC thermistors towards a wide range of applications where temperature monitoring is vital for optimal system performance. [ABSTRACT FROM AUTHOR]

The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for assessing the packaging reliability of power devices. In this work, low-thermal-resistance packaging design structures of SiC devices are introduced, encompassing planar packaging with dual heat dissipation, press-pack packaging, three-dimensional (3D) packaging, and hybrid packaging. PCT methods and their control strategies are summarized and discussed. Direct-current PCT is the focus of this review. The failure mechanisms of SiC devices under PCT are pointed out. The electrical and temperature-sensitive parameters adopted to monitor the aging of SiC devices are organized. The existing international standards for PCT are evaluated. Due to the lack of authoritative statements for SiC devices, it is difficult to achieve comparison research results without consistent preconditions. Furthermore, the lifetimes of the various packaging designs of the tested SiC devices under PCTs are statistically analyzed. Additionally, problems related to parameter monitoring and test equipment are also summarized. This review explores the broader landscape by delving into the current challenges and main trends in PCTs for SiC devices. [ABSTRACT FROM AUTHOR]

Developing thermal storage materials is crucial for the efficient recovery of thermal energy. Salt-based phase-change materials have been widely studied. Despite their high thermal storage density and low cost, they still face issues such as low thermal conductivity and easy leaks. Therefore, a new type of NaCl-Al2O3@SiC@Al2O3 macrocapsule was developed to address these drawbacks, and it exhibited excellent rapid heat storage and release capabilities and was extremely stable, significantly reducing the risk of leakage at high temperatures for industrial waste heat recovery and in concentrated solar power systems above 800 °C. Thermal storage macrocapsules consisted of a double-layer encapsulation of silicon carbide and alumina and a self-standing core of NaCl-Al2O3. After enduring over 1000 h at a high temperature of 850 °C, the encapsulated phase-change material exhibited an extremely low weight loss rate of less than 5% compared with NaCl@Al2O3 and NaCl-Al2O3@Al2O3 macrocapsules, for which the weight loss rate was reduced by 25% and 10%, respectively, proving their excellent leakage prevention. The SiC powder layer, serving as an intermediate coating, further prevented leakage, while the use of Al2O3 ceramics for encapsulation enhanced the overall mechanical strength. It was innovatively discovered that the Al2O3 particles formed a network structure around the molten NaCl, playing an important role in maintaining the shape and preventing leakage of the composite thermal storage phase-change material. Furthermore, the addition of Al2O3 significantly enhanced the rapid heat storage and release rate of NaCl-Al2O3 compared to pure NaCl. This encapsulated phase-change material demonstrated outstanding durability and rapid heat storage and release performance, offering an innovative approach to the application of salt phase-change materials in the field of high temperature rapid heat storage and release and encapsulating NaCl as a high-temperature thermal storage material in a packed bed system. Compared with conventional salt-based phase-change materials, the developed product is expected to significantly improve the reliability and thermal efficiency of thermal storage systems. [ABSTRACT FROM AUTHOR]

The rapid expansion of the scale of wind power has led to a wave of efforts to decommission wind turbine blades. The pyrolysis of decommissioned wind turbine blades (DWTBs) is a promising technological solution. Microwave pyrolysis offers the benefits of fast heating rates and uniform heat transfer, making it a widely used method in various heating applications. However, there are few studies on the microwave pyrolysis of DWTBs, and pyrolysis characteristics under different boundary conditions remain unclear. In this paper, we investigate the pyrolysis characteristics of DWTBs by utilizing silicon carbide (SiC) particles as a microwave absorbent. The results demonstrated that, when the microwave heating power increased from 400 W to 600 W, the heating rate and pyrolysis final temperature of the material increased, resulting in a reduction in pyrolysis residual solid yield from 88.30% to 84.40%. At 600 W, pyrolysis gas components included C2H4, CH4, and CO, while the tar components included phenol and toluene. The highest degree of pyrolysis was achieved under the condition of an SiC particle size of 0.85 mm, with better heating performance, and the calorific value of the pyrolysis gas generated was 36.95 MJ/Nm3. The DWTBs did not undergo pyrolysis when SiC was not added. However, when the mass ratio of SiC to DWTBs was 4, the tar yield was 4.7% and the pyrolysis gas yield was 17.0%, resulting in a faster heating rate and the highest degree of pyrolysis. Based on this, an optimal process for the microwave pyrolysis of DWTBs was proposed, providing a reference for its industrial application. [ABSTRACT FROM AUTHOR]

The distinct spin, optical, and coherence characteristics of solid-state spin defects in semiconductors have positioned them as potential qubits for quantum technologies. Both bulk and two-dimensional materials, with varying structural properties, can serve as crystalline hosts for color centers. In this study, we conduct a comparative analysis of the spin–optical, electron–nuclear, and relaxation properties of nitrogen-bound vacancy defects using electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) techniques. We examine key parameters of the spin Hamiltonian for the nitrogen vacancy ( N V − ) center in 4H-SiC: D = 1.3 GHz, Azz = 1.1 MHz, and CQ = 2.53 MHz, as well as for the boron vacancy ( V B − ) in hBN: D = 3.6 GHz, Azz = 85 MHz, and CQ = 2.11 MHz, and their dependence on the material matrix. The spin–spin relaxation times T2 ( N V − center: 50 µs and V B − : 15 µs) are influenced by the local nuclear environment and spin diffusion while Rabi oscillation damping times depend on crystal size and the spatial distribution of microwave excitation. The ENDOR absorption width varies significantly among color centers due to differences in crystal structures. These findings underscore the importance of selecting an appropriate material platform for developing quantum registers based on high-spin color centers in quantum information systems. [ABSTRACT FROM AUTHOR]

The weight of the primary mirror increases as the aperture of ground-based telescopes increases, making it more challenging to maintain the positional stability and surface accuracy of the solid primary mirror. Consequently, a 2 m lightweight silicon carbide (SiC) mirror and an optimization method were proposed in this study. The relationship between the gravitational deformation of the mirror and its thickness and number of supports was derived based on force analysis of the mirror; the thickness of the mirror and the appropriate number of supports were obtained as initial parameters for optimization. The back structure of the mirror was designed in a lotus pattern to improve its rigidity. Numerous structural parameters were classified into major and non-major parameters based on the results of a sensitivity analysis. The non-major and major structural parameters were optimized using a Latin hypercube design method and a non-dominated sorting genetic algorithm, respectively. The optimized 2 m lightweight SiC mirror had a mass of 119 kg and an areal density of 38.7 kg/m2. The surface figure error root-mean-square (RMS) in the vertical state of the optical axis and the first modal resonance of the mirror assembly calculated using finite element analysis were 11.3 nm and 76.5 Hz, respectively. Modal tests of the mirror assembly were conducted using the hammering method, achieving a maximum relative frequency error of 7.4% compared with the simulation results. The optimized 2 m SiC mirror was over 50% lighter than traditional passive Zerodur mirrors of the same size. [ABSTRACT FROM AUTHOR]