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Despite the large misfit dislocation densities, indium gallium nitride (InGaN) demonstrates high luminous efficiency both for electroluminescence and photoluminescence. The mechanism behind it has been interpreted as the existence of potential minima (i.e., localized states), which will screen the non-radiative recombination centers to avoid carriers being trapped by the defects. The existence of localized states has been testified by many experiments. However, almost all of the observations are indirect observations, and some experiments, such as those focused on whether the indium clusters observed by transmission electron microscopy are localized states, still remain controversial. Here, we report the direct observation of carrier transportation between localized states driven by temperature-dependent photoluminescence (TDPL) and excitation power-dependent PL in InGaN quantum wells. This enriches the experimental evidence on the existence of localized states. [ABSTRACT FROM AUTHOR]