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An analytical surface-potential-based drain current model for amorphous indium–gallium–zinc–oxide (a-InGaZnO) thin film transistors (TFTs) is proposed by introducing an effective charge density approach in this paper. This approach gives two initial approximate values of the effective state density and the effective thermal voltage by using the dominant state of the free charge density in total charge density, and then obtains a high-precision one-exponent equivalent transformation for three-exponent total charge density. Based on this approach, we have solved the problem that the physical meaning of the transition area in the regional method is not clear and a one-piece analytical surface potential solution to Poisson's equation is successfully derived. Furthermore, the drain current is also explicitly derived from the charge sheet model and I-V characteristics of a-InGaZnO TFTs are reproduced from the above obtained model. Finally, accurate and effective surface-potential model and drain current model are obtained and verified by experimental data, respectively. Good verification results prove that the proposed model could become an accurate and suitable tool for being embedded into a circuit simulation. [ABSTRACT FROM AUTHOR]

A non-iterative method is presented to accurately extract the five parameters of single diode model of solar cells in this paper. This method overcomes the problems of complexity and accuracy by simplifying the calculation process. Key parts of the equation are to be adjusted dynamically so that the desired five parameters can be obtained from the I-V curve. Then, the I-V and P-V characteristic curves of solar cells are used to compare the effectiveness of this method with other methods. Furthermore, the root mean square error analysis shows that this method is more applicable than other methods. Finally, the I-V and P-V characteristics simulated by using the extracted parameters in this method are compared and discussed with the experimental data of solar cells under different conditions. In fact, this extraction process can be regarded as an effective and accurate method to estimate solar cells' single diode model parameters. [ABSTRACT FROM AUTHOR]

A surface-potential-based analytical I-V model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal's experimental results. An explicit calculation scheme of surface potential, processing high computation accuracy and efficiency, is demonstrated according to the derivation of the coupling relation between surface potential and back-channel potential. The maximum absolute error decreases into 10−7 V scale, and computation efficiency is improved substantially compared with numerical iteration. Depending on the surface potential, the drain current is derived in closed-form and validated by Khandelwal's experimental data. High computation accuracy and efficiency suggest that this analytical I-V model displays great promise for SOI device optimizations and circuit simulations. [ABSTRACT FROM AUTHOR]

We propose an improved lumped-parameter equivalent circuit model to describe S-shaped I–V kinks observed from organic solar cells. Firstly, to predict the S-shaped I–V kinks accurately in both the first and fourth quadrants, a shunt resistor in parallel with extraction diode is added to our previous model. Secondly, based on the Newton–Raphson method, we derive a solution to our improved circuit. Thirdly, our solution is verified by the method of least squares and experiments. Finally, compared with our previous work, the improved circuit has higher accuracy in demonstrating S-shaped I–V kinks in the first and fourth quadrants. Such an improved model is suitable for circuit simulations of organic solar cells. [ABSTRACT FROM AUTHOR]

An improved lumped-parameter equivalent circuit model is proposed to describe S-shaped I–V characteristics of organic solar cells (OSCs). This model originates but differs from Mazhari’s model. As a minor but important modification, a shunt resistance is added to Mazhari’s model to increase the accuracy of simulating the S-shaped kink in the third quadrant. Subsequently, we present a terminal current-voltage equation set and derive an analytical solution to the improved model. Furthermore, we verify the analytical solution to our model by using the least square method and validate our model by using the experimental I–V curves examined from OSCs. Compared with Mazhari’s model, our model has greater accuracy in interpreting the S-shaped kink with linear-like rise in the third quadrant. As a result, our improved model is suitable to explain the S-shaped I–V characteristics of organic solar cells in the whole operational region, especially for the S-shaped kink in the third quadrant. [ABSTRACT FROM AUTHOR]

In this paper, an analytical and closed-form solution to the lumped parameter equivalent circuit model of organic solar cells is proposed to complete the simulations of the S-shaped I-V characteristics. Based on the model previously proposed by Mazhari, the set of terminal current and voltage equations describing the three diodes is solved and the effects from the model parameters are illustrated. Our solutions are verified by being compared with the least square method results and experimental data, respectively. Good agreements show that our solution calculation scheme is not only both accurate and efficient, but also valid in the whole operation regime of solar cells, especially for the S-shaped kink on the condition where the terminal voltage is larger than the open circuit voltage. Such an analytical solution can play an important role in the simulations for I-V characteristics of solar cells, fast extractions of the model parameters, and implements into practical photovoltaic device simulators. [ABSTRACT FROM AUTHOR]