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Typically, sweet corn, particularly sh2 sweet corn, has low seed vigor owing to its high sugar and low starch content, which is a major problem in sweet corn production, particularly at low temperatures. There is considerable variation in the germination rates among sweet corn varieties under low-temperature conditions, and the underlying mechanisms behind this phenomenon remain unclear. In this study, we screened two inbred sweet corn lines (tolerant line L282 and sensitive line L693) differing in their low-temperature germination rates; while no difference was observed in their germination rates at normal temperatures. To identify the specifically induced genes influencing the germination capacity of sweet corn at low temperatures, a transcriptome analysis of the two lines was conducted at both normal and low temperatures. Compared to the lines at a normal temperature, 3926 and 1404 differently expressed genes (DEGs) were identified from L282 and L693, respectively, under low-temperature conditions. Of them, 830 DEGs were common DEGs (cDEGs) that were identified from both L282 and L693, which were majorly enriched in terms of microtubule-based processes, histone H3-K9 modification, single-organism cellular processes, and carbohydrate metabolic processes. In addition, 3096 special DEGs (sDEGs), with 2199 upregulated and 897 downregulated, were detected in the tolerant line L282, but not in the sensitive line L693. These sDEGs were primarily related to plasma membranes and oxygen-containing compounds. Furthermore, electric conductivity measurements demonstrated that the membrane of L282 experienced less damage, which is consistent with its strong tolerance at low temperatures. These results expand our understanding of the complex mechanisms involved in the cold germination of sweet corn and provide a set of candidate genes for further genetic analysis. [ABSTRACT FROM AUTHOR]

In future dc distributed power systems, high performance high voltage dc-dc converters with redundancy ability are welcome. However, most existing high voltage dc-dc converters do not have redundancy ability. To solve this problem, a wide load range zero-voltage switching (ZVS) three-level (TL) dc-dc converter is proposed, which has some definitely good features. The primary switches have reduced voltage stress, which is only Vin/2. Moreover, no extra clamping component is needed, which results simple primary structure. Redundancy ability can be obtained by both primary and secondary sides, which means high system reliability. With proper designing of magnetizing inductance, all primary switches can obtain ZVS down to 0 output current, and in addition, the added conduction loss can be neglected. TL voltage waveform before the output inductor is obtained, which leads small volume of the output filter. Four secondary MOSFETs can be switched in zero-current switching (ZCS) condition over wide load range. Finally, both the primary and secondary power stages are modular architecture, which permits realizing any given system specifications by low voltage, standardized power modules. The operation principle, soft switching characteristics are presented in this paper, and the experimental results from a 1 kW prototype are also provided to validate the proposed converter. [ABSTRACT FROM AUTHOR]