1. Sub-5 nm Gate-Length Monolayer Selenene Transistors.
- Author
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Li, Qiang, Tan, Xingyi, Yang, Yongming, Xiong, Xiaoyong, Zhang, Teng, and Weng, Zhulin
- Subjects
MOORE'S law ,TRANSISTORS ,MONOMOLECULAR films ,FIELD-effect transistors ,METAL oxide semiconductor field-effect transistors ,DENSITY functional theory - Abstract
Two-dimensional (2D) semiconductors are being considered as alternative channel materials as silicon-based field-effect transistors (FETs) have reached their scaling limits. Recently, air-stable 2D selenium nanosheet FETs with a gate length of 5 µm were experimentally produced. In this study, we used an ab initio quantum transport approach to simulate sub-5 nm gate-length double-gate monolayer (ML) selenene FETs. When considering negative-capacitance technology and underlap, we found that 3 nm gate-length p-type ML selenene FETs can meet the 2013 ITRS standards for high-performance applications along the armchair and zigzag directions in the 2028 horizon. Therefore, ML selenene has the potential to be a channel material that can scale Moore's law down to a gate length of 3 nm. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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