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A microstructure beam is one of the fundamental elements in MEMS devices like cantilever sensors, RF/optical switches, varactors, resonators, etc. It is still difficult to precisely predict the performance of MEMS beams with the current available simulators due to the inevitable process deviations. Feasible numerical methods are required and can be used to improve the yield and profits of the MEMS devices. In this work, process deviations are considered to be stochastic variables, and a newly-developed numerical method, i.e., generalized polynomial chaos (GPC), is applied for the simulation of the MEMS beam. The doubly-clamped polybeam has been utilized to verify the accuracy of GPC, compared with our Monte Carlo (MC) approaches. Performance predictions have been made on the residual stress by achieving its distributions in GaAs Monolithic Microwave Integrated Circuit (MMIC)-based MEMS beams. The results show that errors are within 1% for the results of GPC approximations compared with the MC simulations. Appropriate choices of the 4-order GPC expansions with orthogonal terms have also succeeded in reducing the MC simulation labor. The mean value of the residual stress, concluded from experimental tests, shares an error about 1.1% with that of the 4-order GPC method. It takes a probability around 54.3% for the 4-order GPC approximation to attain the mean test value of the residual stress. The corresponding yield occupies over 90 percent around the mean within the twofold standard deviations. [ABSTRACT FROM AUTHOR]

Based on the first resonance frequency measurement of multilayer beams, a simple extraction method has been developed to extract the Young's modulus of individual layers. To verify this method, the double-layer cantilever, as a typical example, is analyzed to simplify the situation and finite element modeling (FEM) is used in consideration of the buckling and unbuckling situation of cantilevers. The first resonance frequencies, which are obtained by ANSYS (15.0, ANSYS Inc., Pittsburgh, PA, USA) with a group of thirteen setting values of Young's modulus in the polysilicon layer are brought into the theoretical formulas to obtain a new group of Young's modulus in the polysilicon layer. The reliability and feasibility of the theoretical method are confirmed, according to the slight differences between the setting values and the results of the theoretical model. In the experiment, a series of polysilicon-metal double-layer cantilevers were fabricated. Digital holographic microscopy (DHM) (Lyncée Tech, Lausanne, Switzerland) is used to distinguish the buckled from the unbuckled. A scanning laser Doppler vibrometer (LDV) (Polytech GmbH, Berlin, Germany) system is used to measure the first resonance frequencies of them. After applying the measurement results into the theoretical modulus, the average values of Young's modulus in the polysilicon and gold layers are 151.78 GPa and 75.72 GPa, respectively. The extracted parameters are all within the rational ranges, compared with the available results. [ABSTRACT FROM AUTHOR]

In the fabrication of micro-electro-mechanical systems (MEMS) devices, manufacturing process variations are usually involved. For these devices sensitive to process variations such as doubly-clamped beams, mismatches between designs and final products will exist. As a result, it underlies yield problems and will be determined by design parameter ranges and distribution functions. Topographical changes constitute process variations, such as inclination, over-etching, and undulating sidewalls in the Bosch process. In this paper, analytical models are first developed for MEMS doubly-clamped beams, concerning the mentioned geometrical variations. Then, finite-element (FE) analysis is performed to provide a guidance for model verifications. It is found that results predicted by the models agree with those of FE analysis. Assigning process variations, predictions for performance as well as yield can be made directly from the analytical models, by means of probabilistic analysis. In this paper, the footing effect is found to have a more profound effect on the resonant frequency of doubly-clamped beams during the Bosch process. As the confining process has a variation of 10.0%, the yield will have a reduction of 77.3% consequently. Under these circumstances, the prediction approaches can be utilized to guide the further MEMS device designs. [ABSTRACT FROM AUTHOR]