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In this communication, we describe the application of Boltzmann kinetic equations for modeling massive electronic excitation in a silicon nanocrystal film after its irradiation with intense femtosecond hard X-ray pulses. This analysis was inspired by an experiment recently performed at the X-ray free-electron laser facility SACLA, which measured a significant reduction in atomic scattering factors triggered by an X-ray pulse of the intensity ∼ 10 19 W/cm 2 , occurring on a timescale comparable with the X-ray pulse duration (6 fs full width at half maximum). We show that a Boltzmann kinetic equation solver can accurately follow the details of the electronic excitation in silicon atoms caused by such a hard X-ray pulse, yielding predictions in very good agreement with the experimental data. [ABSTRACT FROM AUTHOR]

We present a comparative theoretical study of silicon crystals irradiated with X-ray free-electron laser pulses, using hard X-ray photons of various energies. Simulations are performed with our in-house hybrid code XTANT based on Monte Carlo, Tight Binding and Molecular Dynamics simulation techniques. By comparing the strength of the coherently scattered signal and the corresponding electronic radiation damage for three X-ray photon energies available at the SACLA free-electron laser facility, we conclude that it would be beneficial to use higher photon energies for "diffraction-before-destruction" experiments. [ABSTRACT FROM AUTHOR]

This work is devoted to classical molecular dynamics simulations of surface modifications (craters) drilled by single femtosecond laser pulses in silicon and diamond, materials relevant for numerous industrial applications. We propose a methodology paving the way towards a significant decrease in the simulation computational costs, which could also enable a precise estimation of the craters' size and shape. [ABSTRACT FROM AUTHOR]

In this work, we report on incorporating for the first time tree-algorithm based solvers into the molecular dynamics code, XMDYN. XMDYN was developed to describe the interaction of ultrafast X-ray pulses with atomic assemblies. It is also a part of the simulation platform, SIMEX, developed for computational single-particle imaging studies at the SPB/SFX instrument of the European XFEL facility. In order to improve the XMDYN performance, we incorporated the existing tree-algorithm based Coulomb solver, PEPC, into the code, and developed a dedicated tree-algorithm based secondary ionization solver, now also included in the XMDYN code. These extensions enable computationally efficient simulations of X-ray irradiated large atomic assemblies, e.g., large protein systems or viruses that are of strong interest for ultrafast X-ray science. The XMDYN-based preparatory simulations can now guide future single-particle-imaging experiments at the free-electron-laser facility, EuXFEL. [ABSTRACT FROM AUTHOR]

In this work, we analyze the application of X-ray diffraction imaging techniques to follow ultrafast structural transitions in solid materials using the example of an X-ray pump–X-ray probe experiment with a single-crystal silicon performed at a Linac Coherent Light Source. Due to the spatially non-uniform profile of the X-ray beam, the diffractive signal recorded in this experiment included contributions from crystal parts experiencing different fluences from the peak fluence down to zero. With our theoretical model, we could identify specific processes contributing to the silicon melting in those crystal regions, i.e., the non-thermal and thermal melting whose occurrences depended on the locally absorbed X-ray doses. We then constructed the total volume-integrated signal by summing up the coherent signal contributions (amplitudes) from the various crystal regions and found that this significantly differed from the signals obtained for a few selected uniform fluence values, including the peak fluence. This shows that the diffraction imaging signal obtained for a structurally damaged material after an impact of a non-uniform X-ray pump pulse cannot be always interpreted as the material's response to a pulse of a specific (e.g., peak) fluence as it is sometimes believed. This observation has to be taken into account in planning and interpreting future experiments investigating structural changes in materials with X-ray diffraction imaging. [ABSTRACT FROM AUTHOR]

In this paper we present an overview of our theoretical simulations on the interaction of ultrafast laser pulses with matter. Our dedicated simulation tool, X-ray induced Thermal And Non-thermal Transitions (XTANT) can currently treat semiconductors irradiated with soft to hard X-ray femtosecond pulses. During the excitation and relaxation of solids, their optical properties such as reflectivity, transmission and absorption, are changing, affected by transient electron excitation and, at sufficiently high dose, by atomic relocations. In this review we report how the transient optical properties can be used for diagnostics of electronic and structural transitions occurring in irradiated semiconductors. The presented methodology for calculation of the complex dielectric function applied in XTANT proves to be capable of describing changes in the optical parameters, when the solids are driven out of equilibrium by intense laser pulses. Comparison of model predictions with the existing experimental data shows a good agreement. Application of transient optical properties to laser pulse diagnostics is indicated. [ABSTRACT FROM AUTHOR]