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Your search keyword '"Geng, Wenping"' showing total 14 results
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14 results on '"Geng, Wenping"'

5. Patterned Graphene-Based Metamaterials for Terahertz Wave Absorption

Author

Zhou, Siyuan, primary, Bi, Kaixi, additional, Li, Qiannan, additional, Mei, Linyu, additional, Niu, Yaokai, additional, Fu, Wenxiao, additional, Han, Shuqi, additional, Zhang, Shuai, additional, Mu, Jiliang, additional, Tan, Ligang, additional, Geng, Wenping, additional, and Chou, Xiujian, additional

Published
2022
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13. Influence of Structural Parameters on Performance of SAW Resonators Based on 128° YX LiNbO 3 Single Crystal.

Author

Geng W, Zhao C, Xue F, Qiao X, He J, Xue G, Liu Y, Wei H, Bi K, Mei L, and Chou X

Abstract

The seeking of resonator with high Q and low insertion loss is attractive for critical sensing scenes based on the surface acoustic wave (SAW). In this work, 128° YX LiNbO 3 -based SAW resonators were utilized to optimize the output performance through IDT structure parameters. Once the pairs of IDTs, the acoustic aperture, the reflecting grid logarithm, and the gap between IDT and reflector are changed, a better resonance frequency of 224.85 MHz and a high Q of 1364.5 were obtained. All the results demonstrate the structure parameters design is helpful for the performance enhancement with regard to SAW resonators, especially for designing and fabricating high-Q devices.

Published
2022
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14. Integration Technology for Wafer-Level LiNbO 3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing.

Author

Geng W, Yang X, Xue G, Xu W, Bi K, Mei L, Zhang L, Hou X, and Chou X

Abstract

An integration technology for wafer-level LiNbO 3 single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO 3 single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO 3 can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO 3 single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO 3 single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals.

Published
2021
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