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High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields.

We examined the possibility of measuring dissolved oxygen by using a potentiometric solid-state semiconductor sensor. Thin films of tin (IV) oxide (SnO2) are widely used in oxygen gas sensors. However, their ability to detect dissolved oxygen (DO) in solutions is still unknown. In this paper, we present a method for investigating the dissolved oxygen-sensing properties of SnO2 thin films in solutions by fabricating a SnO2-gate field-effect transistor (FET). A similarly structured hydrogen ion-sensitive silicon nitride (Si3N4)-gate FET was fabricated using the same method. The transfer characteristics and sensitivities were experimentally obtained and compared. The transfer characteristics of the FET show a shift in threshold voltage in response to a decrease in DO concentration. The SnO2-gate FET exhibited a sensitivity of 4 mV/ppm, whereas the Si3N4-gate FET showed no response to DO. Although the SnO2-gate FET responds to pH changes in the solution, this sensitivity issue can be eliminated by using a Si3N4-gate FET, which is capable of selectively sensing hydrogen ions without DO sensitivity. The experimental results indicate the promising properties of SnO2 thin films for multimodal sensing applications.

This research proposes a multiple-input deep learning-driven ion-sensitive field-effect transistor (ISFET) scheme to predict the concentrations of carbaryl pesticide. In the study, the carbaryl concentrations are varied between 1 × 10−7–1 × 10−3 M, and the temperatures of solutions between 20–35 °C. To validate the multiple-input deep learning regression model, the proposed ISFET scheme is deployed onsite (a field test) to measure pesticide concentrations in the carbaryl-spiked vegetable extract. The advantage of this research lies in the use of a deep learning algorithm with an ISFET sensor to effectively predict the pesticide concentrations, in addition to improving the prediction accuracy. The results demonstrate the very high predictive ability of the proposed ISFET scheme, given an MSE, MAE, and R2 of 0.007%, 0.016%, and 0.992, respectively. The proposed multiple-input deep learning regression model with signal compensation is applicable to a wide range of solution temperatures which is convenient for onsite measurement. Essentially, the proposed multiple-input deep learning regression model could be adopted as an effective alternative to the conventional statistics-based regression to predict pesticide concentrations.

This paper presents a novel hybrid microfluidic electronic sensing platform, featuring an electronic sensor incorporated with a microfluidic structure for life science applications. This sensor with a large sensing area of 0.7 mm2 is implemented through a foundry process called Open-Gate Junction FET (OG-JFET). The proposed OG-JFET sensor with a back gate enables the charge by directly introducing the biological and chemical samples on the top of the device. This paper puts forward the design and implementation of a PDMS microfluidic structure integrated with an OG-JFET chip to direct the samples toward the sensing site. At the same time, the sensor’s gain is controlled with a back gate electrical voltage. Herein, we demonstrate and discuss the functionality and applicability of the proposed sensing platform using a chemical solution with different pH values. Additionally, we introduce a mathematical model to describe the charge sensitivity of the OG-JFET sensor. Based on the results, the maximum value of transconductance gain of the sensor is ~1 mA/V at Vgs = 0, which is decreased to ~0.42 mA/V at Vgs = 1, all in Vds = 5. Furthermore, the variation of the back-gate voltage from 1.0 V to 0.0 V increases the sensitivity from ~40 mV/pH to ~55 mV/pH. As per the experimental and simulation results and discussions in this paper, the proposed hybrid microfluidic OG-JFET sensor is a reliable and high-precision measurement platform for various life science and industrial applications.

This paper presents a new field-effect sensor called open-gate junction gate field-effect transistor (OG-JFET) for biosensing applications. The OG-JFET consists of a p-type channel on top of an n-type layer in which the p-type serves as the sensing conductive layer between two ohmic contacted sources and drain electrodes. The structure is novel as it is based on a junction field-effect transistor with a subtle difference in that the top gate (n-type contact) has been removed to open the space for introducing the biomaterial and solution. The channel can be controlled through a back gate, enabling the sensor’s operation without a bulky electrode inside the solution. In this research, in order to demonstrate the sensor’s functionality for chemical and biosensing, we tested OG-JFET with varying pH solutions, cell adhesion (human oral neutrophils), human exhalation, and DNA molecules. Moreover, the sensor was simulated with COMSOL Multiphysics to gain insight into the sensor operation and its ion-sensitive capability. The complete simulation procedures and the physics of pH modeling is presented here, being numerically solved in COMSOL Multiphysics software. The outcome of the current study puts forward OG-JFET as a new platform for biosensing applications.

This paper reports a novel miniaturized pseudo reference electrode (RE) design for biasing Ion Sensitive Field Effect Transistors (ISFETs). It eliminates the need for post-CMOS processing and can scale up in numbers with the CMOS scaling. The presented design employs silane-mediated transfer of patterned gold electrode lines onto PDMS microfluidics such that the gold conformally coats the inside of microfluidic channel. Access to this electrode network is made possible by using “through-PDMS-vias” (TPV), which consist of high metal-coated SU-8 pillars manufactured by a novel process that employs a patterned positive resist layer as SU-8 adhesion depressor. When integrated with pneumatic valves, TPV and pseudo-RE network were able to bias 1.5 nanoliters (nL) of isolated electrolyte volumes. We present a detailed characterization of our pseudo-RE design demonstrating ISFET operation and its DC characterization. The stability of pseudo-RE is investigated by measuring open circuit potential (OCP) against a commercial Ag/AgCl reference electrode.

The monitoring of Na+ ions distributed in the body has been indirectly calculated by the detection of Na+ ions in urine. We fabricated a two–dimensional (2D) Na+ ion sensor using a graphene ion–sensitive field–effect transistor (G–ISFET) and used fluorinated graphene as a reference electrode (FG–RE). We integrated G–ISFET and FG on a printed circuit board (PCB) designed in the form of a secure digital (SD) card to fabricate a disposable Na+ ion sensor. The sensitivity of the PCB tip to Na+ ions was determined to be −55.4 mV/dec. The sensor exhibited good linearity despite the presence of interfering ions in the buffer solution. We expanded the evaluation of the PCB tip to real human patient urine samples. The PCB tip exhibited a sensitivity of −0.36 mV/mM and linearly detected Na+ ions in human patient urine without any dilution process. We expect that G–ISFET with FG–RE can be used to realize a disposable Na+ ion sensor by serving as an alternative to Ag/AgCl reference electrodes.

Field Effect Transistors (FETs) have led the progress of applications measuring the acidity in aqueous solutions thanks to their accuracy, ease of miniaturization and capacity of multiplexing. The signal-to-noise ratio and linearity of the sensors are two of the most relevant figures of merit that can facilitate the improvements of these devices. In this work we present the functionalization with aminopropyltriethoxysilane (APTES) of a promising new FET design consisting of a high height-to-width aspect ratio with an efficient 2D gating architecture that improves both factors. We measured the transistor transfer and output characteristics before and after APTES functionalization, obtaining an improved sensitivity and linearity in both responses. We also compared the experimental results with a site-biding model of the surface buffering capacity of the APTES functionalized layers.

In the last decade the use of field-effect-based devices has become a basic structural element in a new generation of biosensors that allow label-free DNA analysis. In particular, ion sensitive field effect transistors (FET) are the basis for the development of radical new approaches for the specific detection and characterization of DNA due to FETs’ greater signal-to-noise ratio, fast measurement capabilities, and possibility to be included in portable instrumentation. Reliable molecular characterization of DNA and/or RNA is vital for disease diagnostics and to follow up alterations in gene expression profiles. FET biosensors may become a relevant tool for molecular diagnostics and at point-of-care. The development of these devices and strategies should be carefully designed, as biomolecular recognition and detection events must occur within the Debye length. This limitation is sometimes considered to be fundamental for FET devices and considerable efforts have been made to develop better architectures. Herein we review the use of field effect sensors for nucleic acid detection strategies—from production and functionalization to integration in molecular diagnostics platforms, with special focus on those that have made their way into the diagnostics lab.

The liquid junction potential (LJP), the phenomenon that occurs when two electrolyte solutions of different composition come into contact, prevents accurate measurements in potentiometry. The effect of the LJP is usually remarkable in measurements of diluted solutions with low buffering capacities or low ion concentrations. Our group has constructed a simple method to eliminate the LJP by exerting spatiotemporal control of a liquid junction (LJ) formed between two solutions, a sample solution and a baseline solution (BLS), in a flow-through-type differential pH sensor probe. The method was contrived based on microfluidics. The sensor probe is a differential measurement system composed of two ion-sensitive field-effect transistors (ISFETs) and one Ag/AgCl electrode. With our new method, the border region of the sample solution and BLS is vibrated in order to mix solutions and suppress the overshoot after the sample solution is suctioned into the sensor probe. Compared to the conventional method without vibration, our method shortened the settling time from over two min to 15 s and reduced the measurement error by 86% to within 0.060 pH. This new method will be useful for improving the response characteristics and decreasing the measurement error of many apparatuses that use LJs.

As promising biochemical sensors, ion-sensitive field-effect transistors (ISFETs) are used widely in the growing field of biochemical sensing applications. Recently, a new type of field-effect transistor gated by ionic electrolytes has attracted intense attention due to the extremely strong electric-double-layer (EDL) gating effect. In such devices, the carrier density of the semiconductor channel can be effectively modulated by an ion-induced EDL capacitance at the semiconductor/electrolyte interface. With advantages of large specific capacitance, low operating voltage and sensitive interfacial properties, various EDL-based transistor (EDLT) devices have been developed for ultrasensitive portable sensing applications. In this article, we will review the recent progress of EDLT-based biochemical sensors. Starting with a brief introduction of the concepts of EDL capacitance and EDLT, we describe the material compositions and the working principle of EDLT devices. Moreover, the biochemical sensing performances of several important EDLTs are discussed in detail, including organic-based EDLTs, oxide-based EDLTs, nanomaterial-based EDLTs and neuromorphic EDLTs. Finally, the main challenges and development prospects of EDLT-based biochemical sensors are listed.

Accurate and cost-effective integrated sensor systems for continuous monitoring of pH and blood gases continue to be in high demand. The capacity of ion-selective and Gas-sensitive field effect transistors (FETs) to serve as low-power sensors for accurate continuous monitoring of pH and blood gases is evaluated in the amperometric or current mode of operation. A stand-alone current-mode topology is employed in which a constant bias is applied to the gate with the drain current serving as the measuring signal. Compared with voltage-mode operation (e.g., in the feedback mode in ion-selective FETs), current-mode topologies offer the advantages of small size and low power consumption. However, the ion-selective FET (ISFET) and the Gas-sensitive FET (GasFET) exhibit a similar drift behavior, imposing a serious limitation on the accuracy of these sensors for continuous monitoring applications irrespective of the mode of operation. Given the slow temporal variation associated with the drift characteristics in both devices, a common post-processing technique that involves monitoring the variation of the drain current over short intervals of time can potentially allow extraction of the measuring signal in presence of drift in both sensor types. Furthermore, in the amperometric mode the static sensitivity of a FET-based sensor, given by the product of the FET transconductance and the sensitivity of the device threshold voltage to the measurand concentration, can be increased by adjusting the device design parameters. Increasing the sensitivity, while of interest in its own right, also enhances the accuracy of the proposed method. Rigorous analytical validation of the method is presented for GasFET operation in the amperometric mode. Moreover, the correction algorithm is verified experimentally using a Si3N4-gate ISFET operating in the amperometric mode to monitor pH variations ranging from 3.5 to 10.

Furaneol is an aroma compound which occurs naturally in foods and is used as an artificial flavor. Detection of furaneol is required in food science and food processing industry. Capture- Systematic Evolution of Ligands by EXponential enrichment (SELEX) protocol was applied for the isolation of an aptamer binding to furaneol, a small volatile organic substance contributing to the flavor of various products. Thirteen cycles of selection were performed. The resulting DNA pool was cloned, using blunt-end cloning, and ninety-six plasmids were sequenced and analyzed. Eight oligonucleotides were selected as aptamer candidates and screened for the ability to bind to furaneol, using three different methods—magnetic-beads associated elution assay, SYBR Green I assay, and exonuclease protection assay. One of the candidates was further characterized as an aptamer. The apparent equilibrium constant was determined to be (1.1 ± 0.4) µM, by the fluorescent method. The reported aptamer was applied for development of the ion-sensitive field-effect transistor (ISFET)-based biosensor, for the analysis of furaneol, in the concentration range of 0.1⁻10 µM.

Since the 1970s, a great deal of attention has been paid to the development of semiconductor-based biosensors because of the numerous advantages they offer, including high sensitivity, faster response time, miniaturization, and low-cost manufacturing for quick biospecific analysis with reusable features. Commercial biosensors have become highly desirable in the fields of medicine, food, and environmental monitoring as well as military applications, whereas increasing concerns about food safety and health issues have resulted in the introduction of novel legislative standards for these sensors. Numerous devices have been developed for monitoring biological processes such as nucleic acid hybridization, protein⁻protein interaction, antigen⁻antibody bonds, and substrate⁻enzyme reactions, just to name a few. Since the 1980s, scientific interest moved to the development of semiconductor-based devices, which also include integrated front-end electronics, such as the extended-gate field-effect transistor (EGFET) biosensor, one of the first miniaturized chemical sensors. This work is intended to be a review of the state of the art focused on the development of biosensors and chemosensors based on extended-gate field-effect transistor within the field of bioanalytical applications, which will highlight the most recent research reported in the literature. Moreover, a comparison among the diverse EGFET devices will be presented, giving particular attention to the materials and technologies.

A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75–100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.

The electrochemical detection of interactions between aptamers and low-molecular-weight targets often lacks sensitivity. Signal amplification improves the detection of the aptamer-analyte complex; Bsm DNA polymerase was used to amplify the signal from the interaction of vanillin and its aptamer named Van_74 on an ion-sensitive field-effect transistor (ISFET)-based biosensor. The aptamer was immobilized on the ISFET sensitive surface. A short DNA probe was hybridized with the aptamer and dissociated from it upon vanillin addition. A free probe interacted with a special DNA molecular beacon initiated the Bsm DNA polymerase reaction that was detected by ISFET. A buffer solution suitable for both aptamer action and Bsm DNA polymerase activity was determined. The ISFET was shown to detect the Bsm DNA polymerase reaction under the selected conditions. Vanillin at different concentrations (1 × 10−6–1 × 10−8 M) was detected using the biosensor with signal amplification. The developed detection system allowed for the determination of vanillin, starting at a 10−8 M concentration. Application of the Bsm DNA polymerase resulted in a 15.5 times lower LoD when compared to the biosensor without signal amplification (10.1007/s00604-017-2586-4).

A monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate electrodes. Applications for the array include: (1) pH detection by statistical distribution observing time and space fluctuations; (2) DNA detection using thiol-modified or silane-coupled oligonucleotides; (3) bio-image sensing by converting photons to electrons using Photosystem I of Thermosynechococcus elongatus, and sensing the converted electric charges by ISFETs.

Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the ISFET is compatible with the standard CMOS technology. All materials above the gate-oxide are removed by simple, die-level post-CMOS process, allowing ions to modulate the lateral-bipolar current directly. By varying the gate-to-bulk voltage, the operation mode of the ISFET is controlled effectively, so is the noise performance measured and compared. Finally, the biasing conditions preferable for different low-noise applications are identified. Under the identified biasing condition, the signal-to-noise ratio of the ISFET as a pH sensor is proved to be improved by more than five times.

In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect transistor) is one of the most intriguing approaches in electrical biosensing technology. Here, we review some of the main advances in this field over the past few years, explore its application prospects, and discuss the main issues, approaches, and challenges, with the aim of stimulating a broader interest in developing ISFET-based biosensors and extending their applications for reliable and sensitive analysis of various biomolecules such as DNA, proteins, enzymes, and cells.

Application of photocurable polymers for encapsulation of ion selective field effect transistors (ISFET) and for membrane formation in chemical sensitive field effect transistors (ChemFET) during the last 20 years is discussed. From a technological point of view these materials are quite interesting because they allow the use of standard photo-lithographic processes, which reduces significantly the time required for sensor encapsulation and membrane deposition and the amount of manual work required for this, all items of importance for sensor mass production. Problems associated with the application of this kind of polymers in sensors are analysed and estimation of future trends in this field of research are presented.

A wafer-level functionality testing and characterisation system for ISFETs (ion-sensitive field-effect transistor) is realised by means of integration of a specifically designedcapillary electrochemical micro-droplet cell into a commercial wafer prober-station. Thedeveloped system allows the identification and selection of “good†ISFETs at the earlieststage and to avoid expensive bonding, encapsulation and packaging processes for non-functioning ISFETs and thus, to decrease costs, which are wasted for bad dies. Thedeveloped system is also feasible for wafer-level characterisation of ISFETs in terms ofsensitivity, hysteresis and response time. Additionally, the system might be also utilised forwafer-level testing of further electrochemical sensors.

Microfabricated semiconductor devices are becoming increasingly relevant, alsofor the detection of biological and chemical quantities. Especially, the “marriage†ofbiomolecules and silicon technology often yields successful new sensor concepts. Thefabrication techniques of such silicon-based chemical sensors and biosensors, respectively,will have a distinct impact in different fields of application such as medicine, foodtechnology, environment, chemistry and biotechnology as well as information processing.Moreover, scientists and engineers are interested in the analytical benefits of miniaturisedand microfabricated sensor devices. This paper gives a survey on different types ofsemiconductor-based field-effect structures that have been recently developed in ourlaboratory.

In this paper, a preprocessing circuit for ISFETs (Ion-sensitive field-effecttransistors) to measure hydrogen-ion concentration in electrolyte is presented. A modifiedflip-flop is the main part of the circuit. The modification consists in replacing the standardtransistors by ISFETs and periodically switching the supply voltage on and off.Concentration of hydrogen ions to be measured discontinues the flip-flop value symmetry,which means that by switching the supply voltage on the flip-flop goes to one of two stablestates, ‘one’ or ‘zero’. The recovery of the value symmetry can be achieved by changing abalanced voltage, which is incorporated to the flip-flop, to bring the flip-flop to a 50%position (probability of ‘one’ equals to probability of ‘zero’). Thus, the balanced voltagereflects the measured concentration of hydrogen ions. Its magnitude is set automatically byusing a feedback circuit whose input is connected to the flip-flop output. The preprocessingcircuit, as the whole, is the well-known δ modulator in which the switched flip-flop servesas a comparator and a sampling circuit. The advantages of this approach in comparison tothose of standard approaches are discussed. Finally, theoretical results are verified bysimulations with TSPICE and a good agreement is reported.

A time-of-flight-type flow-velocity sensor employing the in-situ electrochemically generation of ion-tracers is developed. The sensor consists of an ion generator and two downstream-placed pH-sensitive Ta2O5-gate ISFETs (ion-sensitive field-effect transistor) that detect generated H+- or OH--ions. The results of the developed flow-velocity sensor under different modes of ion generation are presented and discussed. By applying this ISFET-array, the time of flight, and consequently, the flow velocity can be accurately evaluated using the shift of the response curve of the respective ISFETs in the array along the time scale. A good linearity between the measured flow velocity with the ISFET-array and the delivered flow rate of the pump is observed. In addition, a possibility of flowvelocity measurements by means of a LAPS (light-addressable potentiometric sensor) is firstly demonstrated.

We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N+/P/N+ nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and “low cost” standard photolithography protocols. Such microdevice will provide new opportunities for bio-chemical analysis at the micro/nanoscale.

Sensors play the most important role in observing changes in an environment they are a part. They detect even the smallest changes and send the information to other electronic devices. Making sure that these sensors provide an accurate output is equally crucial, as the data it measures and collects are used for analysis. Until now, calibrating sensors has been done manually by following a sequence of procedures, and is usually performed on-site or in a laboratory prior to deployment. To eliminate the manual procedure in the calibration (at the very least), an ion-sensitive field-effect transistor (ISFET) with a built-in calibration registers circuit was created through segmented eight-bit binary search in a three-point algorithm using a field-programmable gate array (FPGA). The circuit was created using a three-point calibration algorithm and three standard buffers (pH 4, pH 7, and pH 10). The block diagram, schematic diagram, and the number of logic gates were derived after synthesizing the Verilog program in Xilinx/FPGA. An average of 0.30% error was computed to prove the reliability of the created circuit using FPGA. Having an ISFET with built-in calibration registers will alleviate the work of experts in performing calibrations. This would follow the plug and play standard, hence its being a calibration-ready ISFET device. With this feature, it could be used as a pH level meter or a remote sensor node in several applications.

The pH values of aqueous solutions are conventionally measured with pH-sensitive electrodes such as glass electrodes or ion-sensitive field-effect transistors (ISFETs) used in conjunction with Ag/AgCl reference electrodes and KCl solutions. The speed of pH measurement with these systems can be deficient, however, as the glass electrode responds slowly during measurements of sample solutions with low buffering capacities. Our group has constructed a new pH measurement system using a microfluidic device and ISFET sensors. The device has a channel with two inlets and one outlet, with a junction connected to a Y-shaped channel on the same plane. Two ISFET sensors and an Ag/AgCl pseudo reference electrode are fitted into the channel to construct a differential measurement device. A sample solution and baseline solution supplied into the inlets by gravity-driven pumps form a flowing liquid junction during measurement. The small size and fast response of the ISFET sensors enable measurement of about 2.0 mL of sample solution over a measurement period of 120 s. The 90% response time is within 2 s. The calibrated sensor signal exhibits a wide range (pH 1.68–10.0) of linearity with a correlation factor of 0.9997. The measurement error for all solutions tested, including diluted solutions, was 0.0343 ± 0.0974 pH (average error ± standard deviation (S.D.), n = 42). The new device developed in this research will serve as an innovative technology in the field of potentiometry.

The signal-to-noise ratio of planar ISFET pH sensors deteriorates when reducing the area occupied by the device, thus hampering the scalability of on-chip analytical systems which detect the DNA polymerase through pH measurements. Top-down nano-sized tri-gate transistors, such as silicon nanowires, are designed for high performance solid-state circuits thanks to their superior properties of voltage-to-current transduction, which can be advantageously exploited for pH sensing. A systematic study is carried out on rectangular-shaped nanowires developed in a complementary metal-oxide-semiconductor (CMOS)-compatible technology, showing that reducing the width of the devices below a few hundreds of nanometers leads to higher charge sensitivity. Moreover, devices composed of several wires in parallel further increase the exposed surface per unit footprint area, thus maximizing the signal-to-noise ratio. This technology allows a sub milli-pH unit resolution with a sensor footprint of about 1 µm2, exceeding the performance of previously reported studies on silicon nanowires by two orders of magnitude.

An H+-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but they are difficult to fabricate by a single fabrication process because of the bulky and brittle reference electrode materials. Moreover, the reference electrodes need to be separated from the sensor device in some cases. The proposed device is composed of two gated lateral BJT components, one of which had a silicide layer while the other was without the layer. The two components were operated under the metal-oxide semiconductor field-effect transistor (MOSFET)-BJT hybrid mode, which can be controlled by emitter voltage and base current. Buffer solutions with different pH values were used as the sensing targets to verify the characteristics of the proposed device. Owing to their different sensitivities, both components could simultaneously detect the H+-ion concentration and function as a reference to each other. Per the experimental results, the sensitivity of the proposed device was found to be approximately 0.175 μA/pH. This experiment demonstrates enormous potential to lower the cost of the ISFET-based sensor technology.

The monitoring of Na + ions distributed in the body has been indirectly calculated by the detection of Na + ions in urine. We fabricated a two-dimensional (2D) Na + ion sensor using a graphene ion-sensitive field-effect transistor (G-ISFET) and used fluorinated graphene as a reference electrode (FG-RE). We integrated G-ISFET and FG on a printed circuit board (PCB) designed in the form of a secure digital (SD) card to fabricate a disposable Na + ion sensor. The sensitivity of the PCB tip to Na + ions was determined to be -55.4 mV/dec. The sensor exhibited good linearity despite the presence of interfering ions in the buffer solution. We expanded the evaluation of the PCB tip to real human patient urine samples. The PCB tip exhibited a sensitivity of -0.36 mV/mM and linearly detected Na + ions in human patient urine without any dilution process. We expect that G-ISFET with FG-RE can be used to realize a disposable Na + ion sensor by serving as an alternative to Ag/AgCl reference electrodes.